NL1035732A1 - Lithographic apparatus and device manufacturing method. - Google Patents
Lithographic apparatus and device manufacturing method. Download PDFInfo
- Publication number
- NL1035732A1 NL1035732A1 NL1035732A NL1035732A NL1035732A1 NL 1035732 A1 NL1035732 A1 NL 1035732A1 NL 1035732 A NL1035732 A NL 1035732A NL 1035732 A NL1035732 A NL 1035732A NL 1035732 A1 NL1035732 A1 NL 1035732A1
- Authority
- NL
- Netherlands
- Prior art keywords
- clause
- substrate
- hydrogen
- housing
- radiation
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims description 157
- 238000004140 cleaning Methods 0.000 claims description 85
- 230000005855 radiation Effects 0.000 claims description 66
- 238000011109 contamination Methods 0.000 claims description 34
- 238000000059 patterning Methods 0.000 claims description 33
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 28
- 239000001257 hydrogen Substances 0.000 claims description 28
- 229910052739 hydrogen Inorganic materials 0.000 claims description 28
- 239000007789 gas Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 20
- 238000001514 detection method Methods 0.000 claims description 11
- 238000004891 communication Methods 0.000 claims description 9
- 238000005286 illumination Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 238000010494 dissociation reaction Methods 0.000 claims description 3
- 230000005593 dissociations Effects 0.000 claims description 3
- 230000003750 conditioning effect Effects 0.000 claims description 2
- 150000002431 hydrogen Chemical class 0.000 claims 1
- 239000002245 particle Substances 0.000 description 19
- 239000000356 contaminant Substances 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 10
- 230000007935 neutral effect Effects 0.000 description 9
- 239000007788 liquid Substances 0.000 description 7
- 238000007654 immersion Methods 0.000 description 6
- 239000004575 stone Substances 0.000 description 6
- 239000010410 layer Substances 0.000 description 5
- 230000033001 locomotion Effects 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000015654 memory Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 108091006110 nucleoid-associated proteins Proteins 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-VVKOMZTBSA-N Dideuterium Chemical compound [2H][2H] UFHFLCQGNIYNRP-VVKOMZTBSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- -1 e.g. Substances 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000010954 inorganic particle Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0277—Electrolithographic processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
Landscapes
- Health & Medical Sciences (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Atmospheric Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Environmental & Geological Engineering (AREA)
- Toxicology (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/882,081 US7894037B2 (en) | 2007-07-30 | 2007-07-30 | Lithographic apparatus and device manufacturing method |
| US88208107 | 2007-07-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL1035732A1 true NL1035732A1 (nl) | 2009-02-02 |
Family
ID=39885050
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL1035732A NL1035732A1 (nl) | 2007-07-30 | 2008-07-21 | Lithographic apparatus and device manufacturing method. |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7894037B2 (enExample) |
| JP (1) | JP5188576B2 (enExample) |
| KR (1) | KR20100053591A (enExample) |
| CN (2) | CN101765811B (enExample) |
| NL (1) | NL1035732A1 (enExample) |
| TW (1) | TW200916976A (enExample) |
| WO (1) | WO2009015838A1 (enExample) |
Families Citing this family (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100763532B1 (ko) * | 2006-08-17 | 2007-10-05 | 삼성전자주식회사 | 웨이퍼 지지장치, 웨이퍼 노광 장치 및 웨이퍼 지지방법 |
| NL1036618A1 (nl) * | 2008-03-24 | 2009-09-25 | Asml Netherlands Bv | Encoder-type measurement system, lithograpic apparatus and method to detect an error on or in a grid or grating of an encoder-type measurement system. |
| KR20100126775A (ko) * | 2008-04-03 | 2010-12-02 | 칼 짜이스 에스엠테 아게 | 세척 모듈 및 세척 모듈을 갖는 ｅｕｖ 리소그래피 장치 |
| NL1036832A1 (nl) * | 2008-04-15 | 2009-10-19 | Asml Netherlands Bv | Lithographic apparatus comprising an internal sensor and a mini-reactor, and method for treating a sensing surface of an internal sensor of a lithographic apparatus. |
| NL2005739A (en) * | 2009-12-22 | 2011-06-23 | Asml Netherlands Bv | Object with an improved suitability for a plasma cleaning treatment. |
| DE102010044970A1 (de) * | 2010-09-10 | 2011-12-22 | Carl Zeiss Smt Gmbh | Reinigungsmodul für Komponenten von Halbleiterlithographieanlagen und Halbleiterlithographieanlagen |
| JP5709546B2 (ja) * | 2011-01-19 | 2015-04-30 | キヤノン株式会社 | エネルギービーム描画装置及びデバイス製造方法 |
| JP5703841B2 (ja) * | 2011-02-28 | 2015-04-22 | 凸版印刷株式会社 | 反射型マスク |
| US9221081B1 (en) | 2011-08-01 | 2015-12-29 | Novellus Systems, Inc. | Automated cleaning of wafer plating assembly |
| US10066311B2 (en) | 2011-08-15 | 2018-09-04 | Lam Research Corporation | Multi-contact lipseals and associated electroplating methods |
| US9228270B2 (en) | 2011-08-15 | 2016-01-05 | Novellus Systems, Inc. | Lipseals and contact elements for semiconductor electroplating apparatuses |
| US9988734B2 (en) | 2011-08-15 | 2018-06-05 | Lam Research Corporation | Lipseals and contact elements for semiconductor electroplating apparatuses |
| CN104272438B (zh) | 2012-03-28 | 2018-01-12 | 诺发系统公司 | 用于清洁电镀衬底保持器的方法和装置 |
| TWI609100B (zh) | 2012-03-30 | 2017-12-21 | 諾發系統有限公司 | 使用反向電流除鍍以清洗電鍍基板夾持具 |
| US9746427B2 (en) * | 2013-02-15 | 2017-08-29 | Novellus Systems, Inc. | Detection of plating on wafer holding apparatus |
| US10416092B2 (en) | 2013-02-15 | 2019-09-17 | Lam Research Corporation | Remote detection of plating on wafer holding apparatus |
| US8901523B1 (en) * | 2013-09-04 | 2014-12-02 | Asml Netherlands B.V. | Apparatus for protecting EUV optical elements |
| US9539622B2 (en) * | 2014-03-18 | 2017-01-10 | Asml Netherlands B.V. | Apparatus for and method of active cleaning of EUV optic with RF plasma field |
| WO2015154917A1 (en) * | 2014-04-09 | 2015-10-15 | Asml Netherlands B.V. | Apparatus for cleaning an object |
| CN104226637B (zh) * | 2014-07-18 | 2016-06-01 | 中国科学院长春光学精密机械与物理研究所 | 用于清洗受污染光学元件的氢原子收集装置与清洗方法 |
| US10053793B2 (en) | 2015-07-09 | 2018-08-21 | Lam Research Corporation | Integrated elastomeric lipseal and cup bottom for reducing wafer sticking |
| US9888554B2 (en) * | 2016-01-21 | 2018-02-06 | Asml Netherlands B.V. | System, method and apparatus for target material debris cleaning of EUV vessel and EUV collector |
| JP6695750B2 (ja) * | 2016-07-04 | 2020-05-20 | 株式会社荏原製作所 | 基板ホルダの検査装置、これを備えためっき装置、及び外観検査装置 |
| KR102617773B1 (ko) * | 2017-06-01 | 2023-12-22 | 에이에스엠엘 네델란즈 비.브이. | 입자 제거 장치 및 관련 시스템 |
| TW201920946A (zh) * | 2017-06-29 | 2019-06-01 | 美商蘭姆研究公司 | 晶圓固持設備上電鍍之遠程偵測 |
| EP3447581A1 (en) * | 2017-08-23 | 2019-02-27 | ASML Netherlands B.V. | A clear-out tool, a lithographic apparatus and a device manufacturing method |
| WO2019081174A1 (en) * | 2017-10-27 | 2019-05-02 | Asml Holding N.V. | BURLS HAVING MODIFIED SURFACE TOPOGRAPHY FOR HOLDING AN OBJECT IN LITHOGRAPHIC APPLICATIONS |
| US11448955B2 (en) | 2018-09-27 | 2022-09-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Mask for lithography process and method for manufacturing the same |
| US11360384B2 (en) * | 2018-09-28 | 2022-06-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of fabricating and servicing a photomask |
| CN112955822B (zh) * | 2018-11-09 | 2024-10-11 | Asml控股股份有限公司 | 利用具有可控几何形状和组成的清洁衬底进行刻蚀支撑件清洁 |
| DE102018221191A1 (de) * | 2018-12-07 | 2020-06-10 | Carl Zeiss Smt Gmbh | Optisches Element zur Reflexion von VUV-Strahlung und optische Anordnung |
| TWI897405B (zh) | 2019-03-25 | 2025-09-11 | 日商亞多納富有限公司 | 半導體製造系統、其控制方法及控制該系統的電腦程式 |
| CN110161808B (zh) * | 2019-05-09 | 2022-02-22 | 上海华力微电子有限公司 | 光栅尺清洁装置和方法、光刻机 |
| US11638938B2 (en) * | 2019-06-10 | 2023-05-02 | Kla Corporation | In situ process chamber chuck cleaning by cleaning substrate |
| JP7401396B2 (ja) * | 2020-06-04 | 2023-12-19 | キヤノン株式会社 | インプリント装置、物品の製造方法、及びインプリント装置のための測定方法 |
| CN112139151A (zh) * | 2020-09-11 | 2020-12-29 | 韩山师范学院 | 一种大型设备表面清理装置 |
| US11392041B2 (en) * | 2020-09-28 | 2022-07-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Particle removal device and method |
| CN114690570B (zh) * | 2020-12-29 | 2025-04-25 | 上海微电子装备（集团）股份有限公司 | 光刻机、运动台定位测量系统及其工作方法 |
| EP4068000A1 (en) * | 2021-03-30 | 2022-10-05 | ASML Netherlands B.V. | Conditioning apparatus and method |
| CN114200778A (zh) * | 2021-06-25 | 2022-03-18 | 四川大学 | 一种极紫外光刻机lpp光源收集镜的等离子体原位清洗结构 |
| US11520246B1 (en) | 2021-08-30 | 2022-12-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Highly efficient automatic particle cleaner method for EUV systems |
| CN114454071A (zh) * | 2022-02-21 | 2022-05-10 | 上海华力微电子有限公司 | 承载台清洁装置及光刻系统 |
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| JP3613288B2 (ja) | 1994-10-18 | 2005-01-26 | 株式会社ニコン | 露光装置用のクリーニング装置 |
| US5825470A (en) * | 1995-03-14 | 1998-10-20 | Nikon Corporation | Exposure apparatus |
| JP3585606B2 (ja) * | 1995-09-19 | 2004-11-04 | アネルバ株式会社 | Ｃｖｄ装置の電極装置 |
| US5746928A (en) * | 1996-06-03 | 1998-05-05 | Taiwan Semiconductor Manufacturing Company Ltd | Process for cleaning an electrostatic chuck of a plasma etching apparatus |
| US5834371A (en) * | 1997-01-31 | 1998-11-10 | Tokyo Electron Limited | Method and apparatus for preparing and metallizing high aspect ratio silicon semiconductor device contacts to reduce the resistivity thereof |
| TW484039B (en) | 1999-10-12 | 2002-04-21 | Asm Lithography Bv | Lithographic projection apparatus and method |
| JP2001203135A (ja) * | 2000-01-20 | 2001-07-27 | Semiconductor Leading Edge Technologies Inc | 露光装置のクリーニング方法および露光装置 |
| JP2002280365A (ja) * | 2001-03-19 | 2002-09-27 | Applied Materials Inc | 静電チャックのクリーニング方法 |
| EP1329773A3 (en) | 2002-01-18 | 2006-08-30 | ASML Netherlands B.V. | Lithographic apparatus, apparatus cleaning method, and device manufacturing method |
| EP1329770A1 (en) * | 2002-01-18 | 2003-07-23 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP2003234265A (ja) * | 2002-02-06 | 2003-08-22 | Canon Inc | 露光装置 |
| KR100585472B1 (ko) | 2002-09-30 | 2006-06-07 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피장치 및 디바이스 제조방법 |
| DE60323927D1 (de) * | 2002-12-13 | 2008-11-20 | Asml Netherlands Bv | Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung |
| EP1939690A1 (en) | 2002-12-13 | 2008-07-02 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| SG115621A1 (en) * | 2003-02-24 | 2005-10-28 | Asml Netherlands Bv | Method and device for measuring contamination of a surface of a component of a lithographic apparatus |
| US6919573B2 (en) * | 2003-03-20 | 2005-07-19 | Asml Holding N.V | Method and apparatus for recycling gases used in a lithography tool |
| CN1791793B (zh) * | 2003-05-22 | 2010-12-15 | 皇家飞利浦电子股份有限公司 | 至少一个光学元件的清洁方法和装置 |
| TWI402890B (zh) * | 2005-01-24 | 2013-07-21 | 尼康股份有限公司 | Measurement methods, measurement systems, inspection methods, inspection systems, exposure methods and exposure systems |
| US7502095B2 (en) * | 2005-03-29 | 2009-03-10 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method, and device manufactured thereby |
| US8097092B2 (en) * | 2005-06-21 | 2012-01-17 | Kninklijke Philips Electronics N.V. | Method of cleaning and after treatment of optical surfaces in an irradiation unit |
| US8317929B2 (en) * | 2005-09-16 | 2012-11-27 | Asml Netherlands B.V. | Lithographic apparatus comprising an electrical discharge generator and method for cleaning an element of a lithographic apparatus |
| JP2007173344A (ja) * | 2005-12-20 | 2007-07-05 | Canon Inc | 洗浄方法及び装置、露光装置、並びに、デバイス製造方法 |
| US7504643B2 (en) * | 2005-12-22 | 2009-03-17 | Asml Netherlands B.V. | Method for cleaning a lithographic apparatus module, a cleaning arrangement and a lithographic apparatus comprising the cleaning arrangement |
| US20070146658A1 (en) | 2005-12-27 | 2007-06-28 | Asml Netherlands B.V. | Lithographic apparatus and method |
| US7522263B2 (en) * | 2005-12-27 | 2009-04-21 | Asml Netherlands B.V. | Lithographic apparatus and method |
| US7491951B2 (en) * | 2005-12-28 | 2009-02-17 | Asml Netherlands B.V. | Lithographic apparatus, system and device manufacturing method |
| US7473908B2 (en) | 2006-07-14 | 2009-01-06 | Asml Netherlands B.V. | Getter and cleaning arrangement for a lithographic apparatus and method for cleaning a surface |
-
2007
- 2007-07-30 US US11/882,081 patent/US7894037B2/en not_active Expired - Fee Related
-
2008
- 2008-07-21 NL NL1035732A patent/NL1035732A1/nl active Search and Examination
- 2008-07-25 KR KR1020107004512A patent/KR20100053591A/ko not_active Withdrawn
- 2008-07-25 WO PCT/EP2008/006145 patent/WO2009015838A1/en not_active Ceased
- 2008-07-25 CN CN2008801009716A patent/CN101765811B/zh active Active
- 2008-07-25 CN CN201310495327.6A patent/CN103543614B/zh active Active
- 2008-07-25 JP JP2010518550A patent/JP5188576B2/ja active Active
- 2008-07-29 TW TW097128648A patent/TW200916976A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JP5188576B2 (ja) | 2013-04-24 |
| KR20100053591A (ko) | 2010-05-20 |
| CN101765811A (zh) | 2010-06-30 |
| JP2010534946A (ja) | 2010-11-11 |
| US20090033889A1 (en) | 2009-02-05 |
| TW200916976A (en) | 2009-04-16 |
| WO2009015838A1 (en) | 2009-02-05 |
| US7894037B2 (en) | 2011-02-22 |
| CN103543614B (zh) | 2016-03-09 |
| CN101765811B (zh) | 2013-11-20 |
| CN103543614A (zh) | 2014-01-29 |
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