CN101765811B - 光刻设备和器件制造方法 - Google Patents

光刻设备和器件制造方法 Download PDF

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Publication number
CN101765811B
CN101765811B CN2008801009716A CN200880100971A CN101765811B CN 101765811 B CN101765811 B CN 101765811B CN 2008801009716 A CN2008801009716 A CN 2008801009716A CN 200880100971 A CN200880100971 A CN 200880100971A CN 101765811 B CN101765811 B CN 101765811B
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China
Prior art keywords
substrate
radiation beam
shell
cleaning unit
lithographic equipment
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CN2008801009716A
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English (en)
Chinese (zh)
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CN101765811A (zh
Inventor
A·J·布里克
A·L·H·J·范米尔
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ASML Holding NV
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ASML Holding NV
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Priority to CN201310495327.6A priority Critical patent/CN103543614B/zh
Publication of CN101765811A publication Critical patent/CN101765811A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0277—Electrolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps

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  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Environmental & Geological Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CN2008801009716A 2007-07-30 2008-07-25 光刻设备和器件制造方法 Active CN101765811B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310495327.6A CN103543614B (zh) 2007-07-30 2008-07-25 清洁系统和衬底处理工具

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/882,081 2007-07-30
US11/882,081 US7894037B2 (en) 2007-07-30 2007-07-30 Lithographic apparatus and device manufacturing method
PCT/EP2008/006145 WO2009015838A1 (en) 2007-07-30 2008-07-25 Lithographic apparatus and device manufacturing method

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201310495327.6A Division CN103543614B (zh) 2007-07-30 2008-07-25 清洁系统和衬底处理工具

Publications (2)

Publication Number Publication Date
CN101765811A CN101765811A (zh) 2010-06-30
CN101765811B true CN101765811B (zh) 2013-11-20

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CN201310495327.6A Active CN103543614B (zh) 2007-07-30 2008-07-25 清洁系统和衬底处理工具
CN2008801009716A Active CN101765811B (zh) 2007-07-30 2008-07-25 光刻设备和器件制造方法

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CN201310495327.6A Active CN103543614B (zh) 2007-07-30 2008-07-25 清洁系统和衬底处理工具

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Country Link
US (1) US7894037B2 (enExample)
JP (1) JP5188576B2 (enExample)
KR (1) KR20100053591A (enExample)
CN (2) CN103543614B (enExample)
NL (1) NL1035732A1 (enExample)
TW (1) TW200916976A (enExample)
WO (1) WO2009015838A1 (enExample)

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NL1036618A1 (nl) * 2008-03-24 2009-09-25 Asml Netherlands Bv Encoder-type measurement system, lithograpic apparatus and method to detect an error on or in a grid or grating of an encoder-type measurement system.
JP5439469B2 (ja) * 2008-04-03 2014-03-12 カール・ツァイス・エスエムティー・ゲーエムベーハー 洗浄モジュール、及び洗浄モジュールを備えたｅｕｖリソグラフィ装置
NL1036832A1 (nl) * 2008-04-15 2009-10-19 Asml Netherlands Bv Lithographic apparatus comprising an internal sensor and a mini-reactor, and method for treating a sensing surface of an internal sensor of a lithographic apparatus.
NL2005739A (en) * 2009-12-22 2011-06-23 Asml Netherlands Bv Object with an improved suitability for a plasma cleaning treatment.
DE102010044970A1 (de) * 2010-09-10 2011-12-22 Carl Zeiss Smt Gmbh Reinigungsmodul für Komponenten von Halbleiterlithographieanlagen und Halbleiterlithographieanlagen
JP5709546B2 (ja) * 2011-01-19 2015-04-30 キヤノン株式会社 エネルギービーム描画装置及びデバイス製造方法
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US9988734B2 (en) 2011-08-15 2018-06-05 Lam Research Corporation Lipseals and contact elements for semiconductor electroplating apparatuses
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US9539622B2 (en) * 2014-03-18 2017-01-10 Asml Netherlands B.V. Apparatus for and method of active cleaning of EUV optic with RF plasma field
CN106164776B (zh) * 2014-04-09 2019-04-23 Asml荷兰有限公司 用于清洁对象的装置
CN104226637B (zh) * 2014-07-18 2016-06-01 中国科学院长春光学精密机械与物理研究所 用于清洗受污染光学元件的氢原子收集装置与清洗方法
US10053793B2 (en) 2015-07-09 2018-08-21 Lam Research Corporation Integrated elastomeric lipseal and cup bottom for reducing wafer sticking
US9888554B2 (en) 2016-01-21 2018-02-06 Asml Netherlands B.V. System, method and apparatus for target material debris cleaning of EUV vessel and EUV collector
JP6695750B2 (ja) * 2016-07-04 2020-05-20 株式会社荏原製作所 基板ホルダの検査装置、これを備えためっき装置、及び外観検査装置
WO2018219509A1 (en) * 2017-06-01 2018-12-06 Asml Netherlands B.V. Particle removal apparatus and associated system
KR102654656B1 (ko) * 2017-06-29 2024-04-05 램 리써치 코포레이션 웨이퍼 홀딩 장치 상의 도금의 리모트 검출
EP3447581A1 (en) * 2017-08-23 2019-02-27 ASML Netherlands B.V. A clear-out tool, a lithographic apparatus and a device manufacturing method
CN111279266B (zh) * 2017-10-27 2023-04-14 Asml控股股份有限公司 用于光刻应用的具有变化的表面形貌的凸节
US11448955B2 (en) * 2018-09-27 2022-09-20 Taiwan Semiconductor Manufacturing Co., Ltd. Mask for lithography process and method for manufacturing the same
US11360384B2 (en) * 2018-09-28 2022-06-14 Taiwan Semiconductor Manufacturing Co., Ltd. Method of fabricating and servicing a photomask
CN112955822B (zh) * 2018-11-09 2024-10-11 Asml控股股份有限公司 利用具有可控几何形状和组成的清洁衬底进行刻蚀支撑件清洁
DE102018221191A1 (de) * 2018-12-07 2020-06-10 Carl Zeiss Smt Gmbh Optisches Element zur Reflexion von VUV-Strahlung und optische Anordnung
TWI897405B (zh) 2019-03-25 2025-09-11 日商亞多納富有限公司 半導體製造系統、其控制方法及控制該系統的電腦程式
CN110161808B (zh) * 2019-05-09 2022-02-22 上海华力微电子有限公司 光栅尺清洁装置和方法、光刻机
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JP7401396B2 (ja) * 2020-06-04 2023-12-19 キヤノン株式会社 インプリント装置、物品の製造方法、及びインプリント装置のための測定方法
CN112139151A (zh) * 2020-09-11 2020-12-29 韩山师范学院 一种大型设备表面清理装置
US11392041B2 (en) * 2020-09-28 2022-07-19 Taiwan Semiconductor Manufacturing Company, Ltd. Particle removal device and method
CN114690570B (zh) * 2020-12-29 2025-04-25 上海微电子装备（集团）股份有限公司 光刻机、运动台定位测量系统及其工作方法
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Also Published As

Publication number Publication date
KR20100053591A (ko) 2010-05-20
CN103543614B (zh) 2016-03-09
CN101765811A (zh) 2010-06-30
US20090033889A1 (en) 2009-02-05
JP5188576B2 (ja) 2013-04-24
TW200916976A (en) 2009-04-16
WO2009015838A1 (en) 2009-02-05
CN103543614A (zh) 2014-01-29
US7894037B2 (en) 2011-02-22
NL1035732A1 (nl) 2009-02-02
JP2010534946A (ja) 2010-11-11

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