JP5188021B2 - ハンダ膜及びその形成方法 - Google Patents

ハンダ膜及びその形成方法 Download PDF

Info

Publication number
JP5188021B2
JP5188021B2 JP2005362924A JP2005362924A JP5188021B2 JP 5188021 B2 JP5188021 B2 JP 5188021B2 JP 2005362924 A JP2005362924 A JP 2005362924A JP 2005362924 A JP2005362924 A JP 2005362924A JP 5188021 B2 JP5188021 B2 JP 5188021B2
Authority
JP
Japan
Prior art keywords
alloy
substrate
solder film
solder
ausn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2005362924A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007162107A5 (https=
JP2007162107A (ja
Inventor
元樹 小畑
功 水間
良彦 堀金
純二 土屋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Finetech Miyota Co Ltd
Original Assignee
Citizen Finetech Miyota Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Finetech Miyota Co Ltd filed Critical Citizen Finetech Miyota Co Ltd
Priority to JP2005362924A priority Critical patent/JP5188021B2/ja
Publication of JP2007162107A publication Critical patent/JP2007162107A/ja
Publication of JP2007162107A5 publication Critical patent/JP2007162107A5/ja
Application granted granted Critical
Publication of JP5188021B2 publication Critical patent/JP5188021B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors

Landscapes

  • Die Bonding (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Printed Wiring (AREA)
JP2005362924A 2005-12-16 2005-12-16 ハンダ膜及びその形成方法 Expired - Lifetime JP5188021B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005362924A JP5188021B2 (ja) 2005-12-16 2005-12-16 ハンダ膜及びその形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005362924A JP5188021B2 (ja) 2005-12-16 2005-12-16 ハンダ膜及びその形成方法

Publications (3)

Publication Number Publication Date
JP2007162107A JP2007162107A (ja) 2007-06-28
JP2007162107A5 JP2007162107A5 (https=) 2009-02-12
JP5188021B2 true JP5188021B2 (ja) 2013-04-24

Family

ID=38245355

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005362924A Expired - Lifetime JP5188021B2 (ja) 2005-12-16 2005-12-16 ハンダ膜及びその形成方法

Country Status (1)

Country Link
JP (1) JP5188021B2 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010261094A (ja) * 2009-05-11 2010-11-18 Mitsubishi Materials Corp Au−Sn合金蒸着用粒状材およびその製造方法
JP2010275577A (ja) * 2009-05-27 2010-12-09 Ulvac Japan Ltd 成膜方法
JP6070927B2 (ja) * 2012-09-12 2017-02-01 三菱マテリアル株式会社 Au−Sn合金含有ペースト、Au−Sn合金薄膜及びその成膜方法
CN103290251A (zh) * 2013-05-17 2013-09-11 江西理工大学 一种金锡箔带材钎料的制备方法
CN104294218B (zh) * 2014-10-23 2016-06-08 中国科学院上海光学精密机械研究所 金锡薄膜的制备装置和方法
JP6720515B2 (ja) * 2015-12-04 2020-07-08 三菱マテリアル株式会社 Au−Snはんだ粉末及びこの粉末を含むはんだ用ペースト
CN117107199B (zh) * 2023-08-31 2026-03-24 安徽光智科技有限公司 晶圆级封装中电子束蒸发沉积焊料的工艺以及晶圆级封装工艺

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4838485A (https=) * 1971-09-20 1973-06-06
EP0111611B1 (fr) * 1982-10-28 1987-05-13 International Business Machines Corporation Perfectionnements aux procédés et équipements de dépôt par évaporation sous vide mettant en oeuvre un canon à électrons
JPH02145765A (ja) * 1988-11-25 1990-06-05 Hitachi Ltd 膜厚モニタおよびこれを用いた蒸着装置
JPH09115835A (ja) * 1995-10-23 1997-05-02 Sony Corp ウエハ処理装置
JPH09283909A (ja) * 1996-04-19 1997-10-31 Hitachi Ltd 電子回路装置およびその製造方法
JP3303227B2 (ja) * 1996-06-13 2002-07-15 日本航空電子工業株式会社 AuSn多層ハンダ
JP2002224882A (ja) * 2001-01-29 2002-08-13 Hitachi Metals Ltd Au/Sn複合箔及びAu/Sn合金箔並びにそれを用いてなるロウ材、Au/Sn複合箔の製造方法及びAu/Sn合金箔の製造方法、ロウ材の接合方法
JP4208083B2 (ja) * 2004-09-16 2009-01-14 シチズンファインテックミヨタ株式会社 Au−Sn合金積層ハンダ及びその製造方法

Also Published As

Publication number Publication date
JP2007162107A (ja) 2007-06-28

Similar Documents

Publication Publication Date Title
JP5188021B2 (ja) ハンダ膜及びその形成方法
TW200925305A (en) Ag alloy sputtering target, and its manufacturing method
CN109153098B (zh) 接合材料、接合材料的制造方法、接合结构的制作方法
JP4208083B2 (ja) Au−Sn合金積層ハンダ及びその製造方法
JP2011054978A (ja) Znを用いた半田付け構造物および方法
US4063211A (en) Method for manufacturing stable metal thin film resistors comprising sputtered alloy of tantalum and silicon and product resulting therefrom
JP2003160826A (ja) 光記録媒体の反射層形成用銀合金スパッタリングターゲット
JP2001205476A (ja) 合金ろう材
JPS5983766A (ja) 電子銃を用いた真空蒸着装置
JP3315211B2 (ja) 電子部品
US8286582B2 (en) Vapor deposition of dissimilar materials
JPH06128737A (ja) スパッタリングターゲット
US11866818B2 (en) Vapor deposition method for coating a spectacle lens, physical vapor deposition system and crucible for physical vapor deposition
JP7406417B2 (ja) 電極構造および当該電極構造を備えた接合構造体
JP2006245251A (ja) 非晶質状態が安定な相変化記録膜およびこの相変化記録膜を形成するためのスパッタリングターゲット
JP2965015B2 (ja) 半導体装置の耐熱電極およびその製造方法
JP7800767B2 (ja) Al-Sc-Gaスパッタリングターゲット及びその製造方法
JP2012067331A (ja) 成膜方法およびスパッタリング装置
JPH0681141A (ja) スパッタリングターゲット
JPH0818210A (ja) はんだバンプ形成方法
JP4161711B2 (ja) 成膜方法及び成膜装置
JP2582095B2 (ja) ダイヤモンドヒートシンクの製造法
JP2636577B2 (ja) 窒化チタン膜の形成方法
Lichtenberger et al. PVD Magnetron Sputtering Parameters and their Effect on the Composition of AuSn Solder
JPH0673533A (ja) 合金膜の製造方法および蒸着装置

Legal Events

Date Code Title Description
A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20080721

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081205

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20081205

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081219

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100730

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120222

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120423

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130109

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130122

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20160201

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 5188021

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term