JP5184042B2 - 画素回路 - Google Patents
画素回路 Download PDFInfo
- Publication number
- JP5184042B2 JP5184042B2 JP2007269679A JP2007269679A JP5184042B2 JP 5184042 B2 JP5184042 B2 JP 5184042B2 JP 2007269679 A JP2007269679 A JP 2007269679A JP 2007269679 A JP2007269679 A JP 2007269679A JP 5184042 B2 JP5184042 B2 JP 5184042B2
- Authority
- JP
- Japan
- Prior art keywords
- organic
- drive transistor
- transistor
- storage capacitor
- power supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000003990 capacitor Substances 0.000 claims description 38
- 239000010410 layer Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 239000012044 organic layer Substances 0.000 claims description 3
- 230000006866 deterioration Effects 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 102100036285 25-hydroxyvitamin D-1 alpha hydroxylase, mitochondrial Human genes 0.000 description 4
- 101000875403 Homo sapiens 25-hydroxyvitamin D-1 alpha hydroxylase, mitochondrial Proteins 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3258—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the voltage across the light-emitting element
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
- G09G2300/0857—Static memory circuit, e.g. flip-flop
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/04—Maintaining the quality of display appearance
- G09G2320/043—Preventing or counteracting the effects of ageing
- G09G2320/046—Dealing with screen burn-in prevention or compensation of the effects thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Electroluminescent Light Sources (AREA)
- Control Of El Displays (AREA)
Description
Claims (2)
- 駆動電流に応じて発光する有機EL素子と、
データ電圧が充電される保持容量と、
ゲートに前記保持容量の充電電圧を受けて駆動電流を前記有機EL素子に供給する第1駆動トランジスタと、
前記保持容量と、所定の電源とを接続し、有機EL素子における電圧降下に応じた電位をゲートに受けて前記保持容量への充電電流を流す第2駆動トランジスタと、
を有し、
前記第1駆動トランジスタおよび第2駆動トランジスタは、pチャネルトランジスタであり、前記第1駆動トランジスタのソースが第1電源に接続され、前記第2駆動トランジスタのソースが第2電源に接続され、前記第1電源より前記第2電源の方が高い電圧であり、
前記保持容量は、前記有機EL素子の有機層を誘電体層として利用する部分を含み、
前記保持容量にデータ電圧が充電され前記第1駆動トランジスタからの駆動電流が前記有機EL素子に流れる時点から前記第2駆動トランジスタが充電電流を前記保持容量に流し、保持容量の充電電圧の変化によって第1駆動トランジスタの駆動電流が停止することで、データ電圧に応じた期間であって、前記有機EL素子の電圧降下に応じた期間前記有機EL素子に駆動電流が供給される画素回路。 - 請求項1に記載の画素回路において、
前記保持容量は、前記有機EL素子の有機層を誘電体層として利用する一方の電極としての第1の保持容量と、前記第2駆動トランジスタのドレインを形成するポリシリコンの無機半導体を他方の電極として形成される第2の保持容量とでなる画素回路。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007269679A JP5184042B2 (ja) | 2007-10-17 | 2007-10-17 | 画素回路 |
US12/248,218 US8125416B2 (en) | 2007-10-17 | 2008-10-09 | Pixel drive circuit for organic EL display |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007269679A JP5184042B2 (ja) | 2007-10-17 | 2007-10-17 | 画素回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009098386A JP2009098386A (ja) | 2009-05-07 |
JP5184042B2 true JP5184042B2 (ja) | 2013-04-17 |
Family
ID=40562995
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007269679A Active JP5184042B2 (ja) | 2007-10-17 | 2007-10-17 | 画素回路 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8125416B2 (ja) |
JP (1) | JP5184042B2 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9370075B2 (en) * | 2008-12-09 | 2016-06-14 | Ignis Innovation Inc. | System and method for fast compensation programming of pixels in a display |
JP5312294B2 (ja) * | 2009-10-30 | 2013-10-09 | キヤノン株式会社 | 発光装置および露光装置 |
JP2012022168A (ja) * | 2010-07-15 | 2012-02-02 | Sony Corp | 有機el表示装置、有機el表示装置の製造方法、及び、電子機器 |
WO2012063285A1 (ja) * | 2010-11-10 | 2012-05-18 | パナソニック株式会社 | 有機el表示パネル及びその駆動方法 |
KR102112649B1 (ko) | 2013-11-25 | 2020-05-19 | 엘지디스플레이 주식회사 | 유기전계 발광소자 및 이의 리페어 방법 |
CN103985736A (zh) * | 2014-04-30 | 2014-08-13 | 京东方科技集团股份有限公司 | Amoled阵列基板及制作方法和显示装置 |
KR20180013577A (ko) * | 2016-07-29 | 2018-02-07 | 엘지디스플레이 주식회사 | 투명표시장치와 그의 제조방법 |
CN106611586B (zh) * | 2017-03-08 | 2018-11-13 | 京东方科技集团股份有限公司 | 像素驱动电路、驱动方法、有机发光显示面板及显示装置 |
US11151950B2 (en) * | 2019-05-08 | 2021-10-19 | Innolux Corporation | Light-emitting device and display equipment related to variable operation voltage used for reducing power consumption |
CN110827754B (zh) * | 2019-11-04 | 2021-05-11 | Oppo广东移动通信有限公司 | 一种oled驱动电路的补偿电路和显示器 |
CN111951720B (zh) * | 2020-08-10 | 2021-07-23 | Tcl华星光电技术有限公司 | 自发光型显示面板 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4207979B2 (ja) * | 1997-02-17 | 2009-01-14 | セイコーエプソン株式会社 | 表示装置 |
WO2001020591A1 (en) * | 1999-09-11 | 2001-03-22 | Koninklijke Philips Electronics N.V. | Active matrix electroluminescent display device |
JP4046267B2 (ja) * | 2002-03-26 | 2008-02-13 | 株式会社半導体エネルギー研究所 | 表示装置 |
JP2003345307A (ja) * | 2002-05-23 | 2003-12-03 | Sharp Corp | 表示装置およびその駆動方法 |
JP2004054238A (ja) * | 2002-05-31 | 2004-02-19 | Seiko Epson Corp | 電子回路、電気光学装置、電気光学装置の駆動方法、及び電子機器 |
GB0307320D0 (en) * | 2003-03-29 | 2003-05-07 | Koninkl Philips Electronics Nv | Active matrix display device |
JP2005265937A (ja) * | 2004-03-16 | 2005-09-29 | Fuji Electric Holdings Co Ltd | 画像表示装置 |
JP4958392B2 (ja) * | 2004-08-11 | 2012-06-20 | グローバル・オーエルイーディー・テクノロジー・リミテッド・ライアビリティ・カンパニー | 表示装置 |
JP2008521033A (ja) * | 2004-11-16 | 2008-06-19 | イグニス・イノベイション・インコーポレーテッド | アクティブマトリクス型発光デバイス表示器のためのシステム及び駆動方法 |
JP2007256728A (ja) * | 2006-03-24 | 2007-10-04 | Seiko Epson Corp | 表示装置及び電子機器 |
JP2009053576A (ja) * | 2007-08-29 | 2009-03-12 | Eastman Kodak Co | アクティブマトリクス型表示装置 |
JP5015714B2 (ja) * | 2007-10-10 | 2012-08-29 | グローバル・オーエルイーディー・テクノロジー・リミテッド・ライアビリティ・カンパニー | 画素回路 |
US7883943B2 (en) * | 2008-03-11 | 2011-02-08 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing thin film transistor and method for manufacturing display device |
-
2007
- 2007-10-17 JP JP2007269679A patent/JP5184042B2/ja active Active
-
2008
- 2008-10-09 US US12/248,218 patent/US8125416B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2009098386A (ja) | 2009-05-07 |
US20090102759A1 (en) | 2009-04-23 |
US8125416B2 (en) | 2012-02-28 |
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