JP5175471B2 - マルチ−フリースタンディング窒化ガリウム基板の製造方法 - Google Patents
マルチ−フリースタンディング窒化ガリウム基板の製造方法 Download PDFInfo
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- JP5175471B2 JP5175471B2 JP2006333061A JP2006333061A JP5175471B2 JP 5175471 B2 JP5175471 B2 JP 5175471B2 JP 2006333061 A JP2006333061 A JP 2006333061A JP 2006333061 A JP2006333061 A JP 2006333061A JP 5175471 B2 JP5175471 B2 JP 5175471B2
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims description 164
- 229910002601 GaN Inorganic materials 0.000 title claims description 161
- 239000000758 substrate Substances 0.000 title claims description 95
- 238000004519 manufacturing process Methods 0.000 title claims description 37
- 238000000034 method Methods 0.000 claims description 28
- 239000007789 gas Substances 0.000 claims description 26
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 16
- 229910052594 sapphire Inorganic materials 0.000 claims description 14
- 239000010980 sapphire Substances 0.000 claims description 14
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 10
- 238000001816 cooling Methods 0.000 claims description 9
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 9
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 9
- 230000001131 transforming effect Effects 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 6
- 150000004678 hydrides Chemical class 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 238000001947 vapour-phase growth Methods 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims 1
- 238000001878 scanning electron micrograph Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- 238000011065 in-situ storage Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 3
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000007429 general method Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/0203—Making porous regions on the surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02389—Nitrides
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
- H01L21/02507—Alternating layers, e.g. superlattice
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02513—Microstructure
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
- H01L21/02661—In-situ cleaning
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- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Led Devices (AREA)
Description
「多孔性窒化ガリウム層上に成長した窒化ガリウム層における歪緩和(Strain Relaxation in GaN Layers Grown on Porous GaN Sublayers)」(エムアールエス インターネット ジャーナル ナイトライド セミコンダクター リサーチ(MRS Internet J. Nitride Semicond. Res.) 4, 14, 1999) 「無電解湿式化学エッチングによる多孔性窒化ガリウムにおける面内バンドギャップの制御」(In-plane Bandgap Control in Porous GaN through Electroless Wet Chemical Etching)(アプライド フィジクス レタース 80巻、ナンバー6、2002年2月11日発行)(Volume 80, Number 6, 11 February 2002, Applied Physics Letters) 「ボイド形成剥離法を用いたハイドライド気相成長によるフリースタンディング窒化ガリウム基板の製造」(Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted Separation)(ジャパニーズ ジャーナル オブ アプライド フィジクス 42巻、2003、pp.L1−L3、パート2、ナンバー1A/B、2003年1月15日発行)(Jpn. J. Appl. Phys. Vol. 42, 2003, pp. L1-L3, Part 2, No. 1A/B, 15 January 2003)
本発明の方法で使われる設備は、ハイドライド気相成長装置であって、この設備内で窒化ガリウム多孔質層に変質する工程及び厚い窒化ガリウム層を形成する工程がインシツで連続的になされる。
11’ 窒化ガリウム基板
11、12 窒化ガリウム層
11a、12a 窒化ガリウム多孔質層
Claims (7)
- 反応器内に窒化ガリウム層が形成された基板を装着する工程と、
前記窒化ガリウム層の表面をガスエッチング処理によって窒化ガリウム多孔質層に変質する工程と前記窒化ガリウム多孔質層上に窒化ガリウム層を形成する工程とを前記反応器内で複数回繰り返して実施し、前記基板上に窒化ガリウム多孔質層と窒化ガリウム層の積層を複数周期で形成する工程と、
前記積層が形成された基板を冷却して前記窒化ガリウム層を分離する工程と、
を含むことを特徴とするマルチ−フリースタンディング窒化ガリウム基板の製造方法。 - 前記窒化ガリウム層が形成された基板を装着する工程は、前記反応器内に基板を設置し、該基板の表面に結晶成長によって窒化ガリウム層を形成する工程を含むことを特徴とする請求項1に記載のマルチ−フリースタンディング窒化ガリウム基板の製造方法。
- 前記窒化ガリウム層が形成された基板は、窒化ガリウム基板、窒化ガリウム層が形成された窒化ガリウム基板、窒化ガリウム層が形成されたサファイア基板、窒化ガリウム層が形成された炭化珪素基板、窒化ガリウム層が形成されたガリウム砒素基板のうちいずれか1つである請求項1または2に記載のマルチ−フリースタンディング窒化ガリウム基板の製造方法。
- 前記窒化ガリウム層の表面を窒化ガリウム多孔質層に変質する際に塩化水素ガス及びアンモニアガスを使用することを特徴とする請求項1から3のいずれか一項に記載のマルチ−フリースタンディング窒化ガリウム基板の製造方法。
- 常圧で、前記塩化水素ガスを50〜150sccm、前記アンモニアガスを500〜1500sccmの流量で供給することを特徴とする請求項4に記載のマルチ−フリースタンディング窒化ガリウム基板の製造方法。
- 前記窒化ガリウム多孔質層に変質する工程は、900〜1200℃の温度で進められることを特徴とする請求項1から5のいずれか一項に記載のマルチ−フリースタンディング窒化ガリウム基板の製造方法。
- 前記反応器は、ハイドライド気相成長装置の反応器であることを特徴とする請求項1から6のいずれか一項に記載のマルチ−フリースタンディング窒化ガリウム基板の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050130614A KR100695118B1 (ko) | 2005-12-27 | 2005-12-27 | 다중-프리스탠딩 GaN 웨이퍼의 제조방법 |
KR10-2005-0130614 | 2005-12-27 |
Publications (2)
Publication Number | Publication Date |
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JP2007176790A JP2007176790A (ja) | 2007-07-12 |
JP5175471B2 true JP5175471B2 (ja) | 2013-04-03 |
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JP2006333061A Active JP5175471B2 (ja) | 2005-12-27 | 2006-12-11 | マルチ−フリースタンディング窒化ガリウム基板の製造方法 |
Country Status (3)
Country | Link |
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US (1) | US7998272B2 (ja) |
JP (1) | JP5175471B2 (ja) |
KR (1) | KR100695118B1 (ja) |
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KR100707166B1 (ko) * | 2005-10-12 | 2007-04-13 | 삼성코닝 주식회사 | GaN 기판의 제조방법 |
KR100695117B1 (ko) * | 2005-10-25 | 2007-03-14 | 삼성코닝 주식회사 | GaN 제조방법 |
KR100695118B1 (ko) * | 2005-12-27 | 2007-03-14 | 삼성코닝 주식회사 | 다중-프리스탠딩 GaN 웨이퍼의 제조방법 |
US20090001416A1 (en) * | 2007-06-28 | 2009-01-01 | National University Of Singapore | Growth of indium gallium nitride (InGaN) on porous gallium nitride (GaN) template by metal-organic chemical vapor deposition (MOCVD) |
US20100025727A1 (en) * | 2008-08-04 | 2010-02-04 | Benjamin Allen Haskell | Enhanced spontaneous separation method for production of free-standing nitride thin films, substrates, and heterostructures |
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