JP5175424B2 - Si1−xGexの基板上で酸化により二酸化ケイ素層を調製する方法、光学部品または電子部品を調製する方法、およびSi1−xGexOI構造体を調製する方法 - Google Patents
Si1−xGexの基板上で酸化により二酸化ケイ素層を調製する方法、光学部品または電子部品を調製する方法、およびSi1−xGexOI構造体を調製する方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 99
- 239000000758 substrate Substances 0.000 title claims description 69
- 230000003647 oxidation Effects 0.000 title claims description 60
- 238000007254 oxidation reaction Methods 0.000 title claims description 60
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims description 54
- 239000000377 silicon dioxide Substances 0.000 title claims description 12
- 235000012239 silicon dioxide Nutrition 0.000 title claims description 10
- 230000003287 optical effect Effects 0.000 title claims description 4
- 229910006990 Si1-xGex Inorganic materials 0.000 title 1
- 229910007020 Si1−xGex Inorganic materials 0.000 title 1
- 229910052732 germanium Inorganic materials 0.000 claims description 45
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 42
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 38
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 30
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 30
- 239000000203 mixture Substances 0.000 claims description 22
- 230000000295 complement effect Effects 0.000 claims description 18
- 229910045601 alloy Inorganic materials 0.000 claims description 17
- 239000000956 alloy Substances 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 6
- 230000007423 decrease Effects 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000009279 wet oxidation reaction Methods 0.000 claims description 5
- 230000009545 invasion Effects 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 1
- 230000003313 weakening effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 199
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 238000000407 epitaxy Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 5
- 238000011144 upstream manufacturing Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 4
- -1 eg Ge support Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002290 germanium Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000000153 supplemental effect Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Description
ウェーハ表面の質。非常に高いGe濃度を持つゲルマニウムもしくはSiGe合金の層もしくはフィルムは、それらが酸化的雰囲気下に熱処理される場合分解され、SiO2が形成されるだけでなく、酸化ゲルマニウムも形成され、これはその不安定さで知られるものである。
ウェーハの熱処理の間の、酸化的雰囲気下におけるシリコン−ゲルマニウム層もしくはフィルム。その狙いは、シリコンを酸化する表面近くに位置させることにある。ゲルマニウムを有さない酸化物を何とか得た場合、これによって、酸化ゲルマニウムの形成に関わる上記問題を避けることができ、このことは、特にゲルマニウムの移動によって説明され得、ゲルマニウムのこの移動は、酸化の最前線の「前」でのゲルマニウム濃度の制御できない上昇を招いてしまう。酸化の最前線の前でのこのようにしてもたらされる制御できないゲルマニウム濃度勾配は、例えば高周波マイクロエレクトロニクスにおけるもののような引き続いて意図される適用の殆どにとって、許容できるものではない。
a)厚さhyおよび全体式Si1-yGey(式中、yは0よりも大きくx未満)を有する少なくとも1つの追加層が、式Si1-xGexの該基板上に堆積される。
b)全体式Si1-yGeyの該追加層が400℃以上の温度で酸化され、これによって、該追加層が部分的に、二酸化ケイ素層へと変換され、式Si1-zGezおよび厚さhz(式中、zは実質的にxに等しい)の層上に二酸化ケイ素層を与える。
Si1−yGeyも完全に酸化される:その後、該Si1−xGex上にはSiO2層ができ、この組成はコントロールされた最前線のGeを持つ(その後、Si1−xGex表面上にはSi1−x’Gex’層(x’>x)ができる);あるいは
Si1−yGeyが部分的に酸化される:その後、Si1−xGex上のSi1−zGez上にはSiO2層ができ(z>y)、z=xを確実にすることが有益である。
この実施例では、本発明による方法の履行が、従来技術から既知の種々の技術、例えばCVDまたはRPCVDエピタキシー、例えば堆積に関する連続勾配技術を使用して、基板上において、例えばシリコンでできた基板(200nmのシリコン「初期」基板)上において、SiGe緩衝層の堆積をもって始まり、Si1-xGex層の濃度xが、その表面において0から所望の濃度へと連続的に変動する。
この第2の実施例は、第1の実施例の酸化に関しての変法である。この実施例では、以前と同一の構造が、蒸気、H2(流速8L/分)、およびO2(流速4L/分)により、900℃の温度において、湿式酸化を受ける。
Claims (21)
- 式Si1-xGex(式中、xは0よりも大きく1未満)の基板上で、400℃以上の温度の酸化により二酸化ケイ素層を調製する方法であって、該方法が以下の連続ステップ:
a)厚さhyであり全体式Si1-yGey(式中、yは0よりも大きくx未満)の少なくとも1つの追加層が、式Si1-xGexの該基板上に堆積されるステップ;および
b)全体式Si1-yGeyの該追加層の該酸化が実施され、これにより、該追加層が、部分的に、二酸化ケイ素層へと変換され、式Si1-zGezおよび厚さhz(式中、zは実質的にxに等しい)の層上に二酸化ケイ素層を与えるステップ
を含む方法。 - 前記基板が、支持体上で、Si1-xGex層から構成され、該支持体が、単一材料でできているか、あるいは、ベース基板を含み、該ベース基板上で、1つ以上の緩衝適合層が作られる、請求項1に記載の方法。
- 前記Si1-xGex層が、単結晶のSi1-xGex層から構成される、請求項2に記載の方法。
- 前記単一材料が、ゲルマニウムまたはケイ素である、請求項2に記載の方法。
- 前記ベース基板が、Siでできている、請求項2に記載の方法。
- 前記緩衝適合層が、SiGeでできている、請求項2に記載の方法。
- yおよび/またはhyが、前記酸化後に、前記二酸化ケイ素層下に横たわる前記SiGe合金層のゲルマニウム濃度をコントロールするよう選ばれる、請求項1〜6のいずれか1項に記載の方法。
- yおよび/または前記厚さhyにより定義される前記追加層の組成が、前記Si1-xGex基板および/または前記二酸化ケイ素層の厚さおよび/または前記二酸化ケイ素層直下に横たわる前記ケイ素−ゲルマニウム合金層のゲルマニウム濃度によって選ばれる、請求項1〜7のいずれか1項に記載の方法。
- yおよび/または前記厚さhyにより定義される前記追加層の組成が、Si1-xGexおよびSi1-yGey間の結晶格子パラメーターにおける違いにより生成される歪みを制限するよう選ばれる、請求項1〜8のいずれか1項に記載の方法。
- 前記追加層が、前記ゲルマニウム濃度が連続的に変動する勾配の付けられた組成の層である、請求項1〜9のいずれか1項に記載の方法。
- 前記追加層が、前記ゲルマニウム濃度が前記基板から連続的に減少して行く勾配の付けられた組成の層である、請求項10に記載の方法。
- y値において異なる幾つかの追加層が堆積される、請求項1〜11のいずれか1項に記載の方法。
- 前記基板近くに位置する前記追加層から前記厚さhyに位置する層までy値が減少して行く、請求項12に記載の方法。
- SiGe補完層もまた、少なくとも1つの前記追加層上に堆積され、該補完層もまた、二酸化ケイ素層へと完全に変換される、請求項1〜13のいずれか1項に記載の方法。
- SiO2補完層もまた、少なくとも1つの前記追加層上に堆積される、請求項1〜13のいずれか1項に記載の方法。
- 前記酸化が、乾式および/または湿式酸化熱処理による酸化である、請求項1〜15のいずれか1項に記載の方法。
- 光学部品または電子部品を調製する方法であって、二酸化ケイ素層が、請求項1〜16のいずれか1項に記載の方法により調製される少なくとも1つのステップを含む、方法。
- Si1-xGexOI構造体を調製する方法であって、二酸化ケイ素層により覆われるSi1-xGexフィルムを含む構造体が、請求項1〜16のいずれか1項に記載の方法により調製され、該Si1-xGexフィルム内に位置する層が、ステップb)前もしくは後に、弱体化され、この弱められた層を含むこの構造体が、基板へと結合され、該基板および該構造体を含む組み立て品を得、この組み立て品が、熱処理および/または機械処理により、この弱められた層において分離される方法。
- 前記弱体化が、気体状化学種の侵入により行われる、請求項18に記載の方法。
- 前記基板が、シリコン基板である、請求項18に記載の方法。
- Si1-xGexOI構造体を調製する方法であって、二酸化ケイ素層により覆われるSi1-xGexフィルムを含む構造体が、請求項1〜16のいずれか1項に記載の方法により調製され、この構造体が基板へと結合され、該基板および該構造体を含む組み立て品を得、この組み立て品が、機械的および/または化学的に薄くされる方法。
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Application Number | Priority Date | Filing Date | Title |
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FR0450590A FR2868202B1 (fr) | 2004-03-25 | 2004-03-25 | Procede de preparation d'une couche de dioxyde de silicium par oxydation a haute temperature sur un substrat presentant au moins en surface du germanium ou un alliage sicicium- germanium. |
FR0450590 | 2004-03-25 |
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JP2005322891A JP2005322891A (ja) | 2005-11-17 |
JP2005322891A5 JP2005322891A5 (ja) | 2013-01-17 |
JP5175424B2 true JP5175424B2 (ja) | 2013-04-03 |
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JP2005088550A Active JP5175424B2 (ja) | 2004-03-25 | 2005-03-25 | Si1−xGexの基板上で酸化により二酸化ケイ素層を調製する方法、光学部品または電子部品を調製する方法、およびSi1−xGexOI構造体を調製する方法 |
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US (1) | US7435690B2 (ja) |
EP (1) | EP1580805B1 (ja) |
JP (1) | JP5175424B2 (ja) |
FR (1) | FR2868202B1 (ja) |
Families Citing this family (13)
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FR2773261B1 (fr) | 1997-12-30 | 2000-01-28 | Commissariat Energie Atomique | Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions |
JP4413580B2 (ja) * | 2003-11-04 | 2010-02-10 | 株式会社東芝 | 素子形成用基板の製造方法 |
WO2006090201A2 (en) * | 2005-02-24 | 2006-08-31 | S.O.I.Tec Silicon On Insulator Technologies | Thermal oxidation of a sige layer and applications thereof |
JP4427489B2 (ja) * | 2005-06-13 | 2010-03-10 | 株式会社東芝 | 半導体装置の製造方法 |
FR2891281B1 (fr) * | 2005-09-28 | 2007-12-28 | Commissariat Energie Atomique | Procede de fabrication d'un element en couches minces. |
FR2910179B1 (fr) | 2006-12-19 | 2009-03-13 | Commissariat Energie Atomique | PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART |
US8440547B2 (en) | 2009-02-09 | 2013-05-14 | International Business Machines Corporation | Method and structure for PMOS devices with high K metal gate integration and SiGe channel engineering |
DE102009010883B4 (de) * | 2009-02-27 | 2011-05-26 | Amd Fab 36 Limited Liability Company & Co. Kg | Einstellen eines nicht-Siliziumanteils in einer Halbleiterlegierung während der FET-Transistorherstellung mittels eines Zwischenoxidationsprozesses |
JP2010219249A (ja) * | 2009-03-16 | 2010-09-30 | Fujitsu Ltd | 半導体装置の製造方法及び半導体装置 |
FR2947098A1 (fr) | 2009-06-18 | 2010-12-24 | Commissariat Energie Atomique | Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince |
US10256098B2 (en) * | 2015-10-29 | 2019-04-09 | Micron Technology, Inc. | Integrated assemblies containing germanium |
FR3064398B1 (fr) * | 2017-03-21 | 2019-06-07 | Soitec | Structure de type semi-conducteur sur isolant, notamment pour un capteur d'image de type face avant, et procede de fabrication d'une telle structure |
US10276687B1 (en) * | 2017-12-20 | 2019-04-30 | International Business Machines Corporation | Formation of self-aligned bottom spacer for vertical transistors |
Family Cites Families (16)
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JPS62136036A (ja) * | 1985-12-10 | 1987-06-19 | Nec Corp | 絶縁膜形成法 |
JPH01143220A (ja) * | 1987-11-27 | 1989-06-05 | Nec Corp | ゲルマニウムの保護膜およびその製造方法 |
US5089428A (en) * | 1989-12-27 | 1992-02-18 | Texas Instruments Incorporated | Method for forming a germanium layer and a heterojunction bipolar transistor |
US5882987A (en) * | 1997-08-26 | 1999-03-16 | International Business Machines Corporation | Smart-cut process for the production of thin semiconductor material films |
DE60038793D1 (de) * | 1999-03-12 | 2008-06-19 | Ibm | Für feldeffektanordnungen |
US6350993B1 (en) * | 1999-03-12 | 2002-02-26 | International Business Machines Corporation | High speed composite p-channel Si/SiGe heterostructure for field effect devices |
DE60045126D1 (de) | 1999-06-25 | 2010-12-02 | Massachusetts Inst Technology | Oxidation einer auf einer germaniumschicht aufgebrachten siliziumschicht |
JP3647777B2 (ja) * | 2001-07-06 | 2005-05-18 | 株式会社東芝 | 電界効果トランジスタの製造方法及び集積回路素子 |
US7008864B2 (en) * | 2001-10-26 | 2006-03-07 | Sige Semiconductor Inc. | Method of depositing high-quality SiGe on SiGe substrates |
US20030230778A1 (en) * | 2002-01-30 | 2003-12-18 | Sumitomo Mitsubishi Silicon Corporation | SOI structure having a SiGe Layer interposed between the silicon and the insulator |
DE10218381A1 (de) * | 2002-04-24 | 2004-02-26 | Forschungszentrum Jülich GmbH | Verfahren zur Herstellung einer oder mehrerer einkristalliner Schichten mit jeweils unterschiedlicher Gitterstruktur in einer Ebene einer Schichtenfolge |
FR2842349B1 (fr) * | 2002-07-09 | 2005-02-18 | Transfert d'une couche mince a partir d'une plaquette comprenant une couche tampon | |
US6673696B1 (en) * | 2003-01-14 | 2004-01-06 | Advanced Micro Devices, Inc. | Post trench fill oxidation process for strained silicon processes |
US7022593B2 (en) * | 2003-03-12 | 2006-04-04 | Asm America, Inc. | SiGe rectification process |
WO2005027214A1 (ja) * | 2003-09-10 | 2005-03-24 | Shin-Etsu Handotai Co., Ltd. | 積層基板の洗浄方法及び基板の貼り合わせ方法並びに貼り合せウェーハの製造方法 |
JP4413580B2 (ja) * | 2003-11-04 | 2010-02-10 | 株式会社東芝 | 素子形成用基板の製造方法 |
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US7435690B2 (en) | 2008-10-14 |
US20050215071A1 (en) | 2005-09-29 |
EP1580805B1 (fr) | 2013-06-19 |
EP1580805A2 (fr) | 2005-09-28 |
FR2868202B1 (fr) | 2006-05-26 |
JP2005322891A (ja) | 2005-11-17 |
EP1580805A3 (fr) | 2010-10-20 |
FR2868202A1 (fr) | 2005-09-30 |
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