JP5172808B2 - 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ - Google Patents

磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ Download PDF

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JP5172808B2
JP5172808B2 JP2009236542A JP2009236542A JP5172808B2 JP 5172808 B2 JP5172808 B2 JP 5172808B2 JP 2009236542 A JP2009236542 A JP 2009236542A JP 2009236542 A JP2009236542 A JP 2009236542A JP 5172808 B2 JP5172808 B2 JP 5172808B2
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magnetization
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JP2010010720A5 (enExample
JP2010010720A (ja
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川 将 寿 吉
川 英 二 北
坊 忠 臣 大
瀬 俊 彦 永
達 也 岸
田 博 明 與
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Toshiba Corp
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JP2009236542A 2009-10-13 2009-10-13 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ Active JP5172808B2 (ja)

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JP2009236542A JP5172808B2 (ja) 2009-10-13 2009-10-13 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ

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JP2009236542A JP5172808B2 (ja) 2009-10-13 2009-10-13 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ

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JP2007248251A Division JP4738395B2 (ja) 2007-09-25 2007-09-25 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ

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JP2010010720A5 JP2010010720A5 (enExample) 2011-05-26
JP5172808B2 true JP5172808B2 (ja) 2013-03-27

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Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5203871B2 (ja) * 2008-09-26 2013-06-05 株式会社東芝 磁気抵抗効果素子及び磁気メモリ
JP5600344B2 (ja) * 2010-03-10 2014-10-01 株式会社日立製作所 磁気抵抗効果素子及び磁気メモリ
JP2012059878A (ja) * 2010-09-08 2012-03-22 Sony Corp 記憶素子、メモリ装置
JP2012129225A (ja) * 2010-12-13 2012-07-05 Sony Corp 記憶素子、メモリ装置
JP2012182217A (ja) 2011-02-28 2012-09-20 Toshiba Corp 半導体記憶装置
JP5722140B2 (ja) 2011-07-04 2015-05-20 株式会社東芝 磁気抵抗素子及び磁気メモリ
US8946837B2 (en) 2011-07-04 2015-02-03 Kabushiki Kaisha Toshiba Semiconductor storage device with magnetoresistive element
JP5597899B2 (ja) * 2012-09-21 2014-10-01 株式会社東芝 磁気抵抗素子および磁気メモリ
JP6028834B2 (ja) * 2015-06-12 2016-11-24 ソニー株式会社 スピントランスファトルク記憶素子、記憶装置
BR112019003709A2 (pt) 2016-08-25 2019-05-28 Centre Nat Rech Scient nanopartículas de silício multifuncionalizadas, usos de nanopartículas de silício multifuncionalizadas, composição e métodos para medir um analito por um método in vitro
JP6806199B1 (ja) * 2019-08-08 2021-01-06 Tdk株式会社 磁気抵抗効果素子およびホイスラー合金

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3824600B2 (ja) * 2003-07-30 2006-09-20 株式会社東芝 磁気抵抗効果素子および磁気メモリ
US6967863B2 (en) * 2004-02-25 2005-11-22 Grandis, Inc. Perpendicular magnetization magnetic element utilizing spin transfer
JP2007150265A (ja) * 2005-10-28 2007-06-14 Toshiba Corp 磁気抵抗効果素子および磁気記憶装置

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