JP2010010720A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2010010720A5 JP2010010720A5 JP2009236542A JP2009236542A JP2010010720A5 JP 2010010720 A5 JP2010010720 A5 JP 2010010720A5 JP 2009236542 A JP2009236542 A JP 2009236542A JP 2009236542 A JP2009236542 A JP 2009236542A JP 2010010720 A5 JP2010010720 A5 JP 2010010720A5
- Authority
- JP
- Japan
- Prior art keywords
- magnetization
- film
- layer
- free layer
- magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005415 magnetization Effects 0.000 claims description 326
- 230000005291 magnetic effect Effects 0.000 claims description 211
- 230000004888 barrier function Effects 0.000 claims description 86
- 229910052742 iron Inorganic materials 0.000 claims description 40
- 229910052759 nickel Inorganic materials 0.000 claims description 34
- 230000000694 effects Effects 0.000 claims description 28
- 230000015654 memory Effects 0.000 claims description 22
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical group [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 16
- 229910052779 Neodymium Inorganic materials 0.000 claims description 13
- 229910052771 Terbium Inorganic materials 0.000 claims description 13
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 12
- 229910052689 Holmium Inorganic materials 0.000 claims description 12
- 229910052772 Samarium Inorganic materials 0.000 claims description 12
- 229910052691 Erbium Inorganic materials 0.000 claims description 11
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 11
- 229910052775 Thulium Inorganic materials 0.000 claims description 11
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 11
- 239000000696 magnetic material Substances 0.000 claims description 11
- 229910052684 Cerium Inorganic materials 0.000 claims description 10
- 229910052693 Europium Inorganic materials 0.000 claims description 10
- 229910052765 Lutetium Inorganic materials 0.000 claims description 10
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 229910052721 tungsten Inorganic materials 0.000 claims description 9
- 229910052758 niobium Inorganic materials 0.000 claims description 8
- 229910052715 tantalum Inorganic materials 0.000 claims description 8
- 229910052726 zirconium Inorganic materials 0.000 claims description 8
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- 229910052735 hafnium Inorganic materials 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 368
- 238000002425 crystallisation Methods 0.000 description 104
- 230000008025 crystallization Effects 0.000 description 104
- 229910045601 alloy Inorganic materials 0.000 description 53
- 239000000956 alloy Substances 0.000 description 53
- 229910005335 FePt Inorganic materials 0.000 description 31
- 230000004048 modification Effects 0.000 description 25
- 238000012986 modification Methods 0.000 description 25
- 229910052761 rare earth metal Inorganic materials 0.000 description 24
- 229910019236 CoFeB Inorganic materials 0.000 description 23
- 239000000203 mixture Substances 0.000 description 17
- 238000000034 method Methods 0.000 description 16
- 238000002347 injection Methods 0.000 description 15
- 239000007924 injection Substances 0.000 description 15
- 239000000758 substrate Substances 0.000 description 15
- 239000013078 crystal Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 13
- 230000005290 antiferromagnetic effect Effects 0.000 description 11
- 229910052763 palladium Inorganic materials 0.000 description 11
- 229910052697 platinum Inorganic materials 0.000 description 11
- 229910052741 iridium Inorganic materials 0.000 description 10
- 229910019227 CoFeTb Inorganic materials 0.000 description 9
- 230000008878 coupling Effects 0.000 description 9
- 238000010168 coupling process Methods 0.000 description 9
- 238000005859 coupling reaction Methods 0.000 description 9
- 229910052707 ruthenium Inorganic materials 0.000 description 9
- 229910052737 gold Inorganic materials 0.000 description 8
- 230000005389 magnetism Effects 0.000 description 8
- 229910052703 rhodium Inorganic materials 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000007787 solid Substances 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 229910052791 calcium Inorganic materials 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 230000005294 ferromagnetic effect Effects 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- 229910052762 osmium Inorganic materials 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052712 strontium Inorganic materials 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 229910052749 magnesium Inorganic materials 0.000 description 5
- 229910000510 noble metal Inorganic materials 0.000 description 5
- 229910052706 scandium Inorganic materials 0.000 description 5
- 229910052727 yttrium Inorganic materials 0.000 description 5
- 229910015136 FeMn Inorganic materials 0.000 description 4
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000005641 tunneling Effects 0.000 description 4
- 229910018979 CoPt Inorganic materials 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000001427 coherent effect Effects 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 230000001747 exhibiting effect Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 229910000765 intermetallic Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 150000002910 rare earth metals Chemical class 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910003321 CoFe Inorganic materials 0.000 description 2
- 229910015187 FePd Inorganic materials 0.000 description 2
- 229910019041 PtMn Inorganic materials 0.000 description 2
- 229910000767 Tm alloy Inorganic materials 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- AIYUHDOJVYHVIT-UHFFFAOYSA-M caesium chloride Chemical compound [Cl-].[Cs+] AIYUHDOJVYHVIT-UHFFFAOYSA-M 0.000 description 2
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000002003 electron diffraction Methods 0.000 description 2
- 239000003302 ferromagnetic material Substances 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 229910016570 AlCu Inorganic materials 0.000 description 1
- 229910019222 CoCrPt Inorganic materials 0.000 description 1
- 229910019233 CoFeNi Inorganic materials 0.000 description 1
- 229910003289 NiMn Inorganic materials 0.000 description 1
- 229910000979 O alloy Inorganic materials 0.000 description 1
- 229910019026 PtCr Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000002902 ferrimagnetic material Substances 0.000 description 1
- 235000012907 honey Nutrition 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000009812 interlayer coupling reaction Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009236542A JP5172808B2 (ja) | 2009-10-13 | 2009-10-13 | 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009236542A JP5172808B2 (ja) | 2009-10-13 | 2009-10-13 | 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007248251A Division JP4738395B2 (ja) | 2007-09-25 | 2007-09-25 | 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010010720A JP2010010720A (ja) | 2010-01-14 |
| JP2010010720A5 true JP2010010720A5 (enExample) | 2011-05-26 |
| JP5172808B2 JP5172808B2 (ja) | 2013-03-27 |
Family
ID=41590760
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009236542A Active JP5172808B2 (ja) | 2009-10-13 | 2009-10-13 | 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5172808B2 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5203871B2 (ja) * | 2008-09-26 | 2013-06-05 | 株式会社東芝 | 磁気抵抗効果素子及び磁気メモリ |
| WO2011111473A1 (ja) * | 2010-03-10 | 2011-09-15 | 株式会社日立製作所 | 磁気抵抗効果素子及び磁気メモリ |
| JP2012059878A (ja) * | 2010-09-08 | 2012-03-22 | Sony Corp | 記憶素子、メモリ装置 |
| JP2012129225A (ja) * | 2010-12-13 | 2012-07-05 | Sony Corp | 記憶素子、メモリ装置 |
| JP2012182217A (ja) | 2011-02-28 | 2012-09-20 | Toshiba Corp | 半導体記憶装置 |
| US8946837B2 (en) | 2011-07-04 | 2015-02-03 | Kabushiki Kaisha Toshiba | Semiconductor storage device with magnetoresistive element |
| JP5722140B2 (ja) | 2011-07-04 | 2015-05-20 | 株式会社東芝 | 磁気抵抗素子及び磁気メモリ |
| JP5597899B2 (ja) * | 2012-09-21 | 2014-10-01 | 株式会社東芝 | 磁気抵抗素子および磁気メモリ |
| JP6028834B2 (ja) * | 2015-06-12 | 2016-11-24 | ソニー株式会社 | スピントランスファトルク記憶素子、記憶装置 |
| CN110139828B (zh) | 2016-08-25 | 2021-05-28 | 豪夫迈·罗氏有限公司 | 多官能化硅纳米颗粒、其制备方法及其在基于电化学发光的检测方法中的用途 |
| JP6806199B1 (ja) * | 2019-08-08 | 2021-01-06 | Tdk株式会社 | 磁気抵抗効果素子およびホイスラー合金 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3824600B2 (ja) * | 2003-07-30 | 2006-09-20 | 株式会社東芝 | 磁気抵抗効果素子および磁気メモリ |
| US6967863B2 (en) * | 2004-02-25 | 2005-11-22 | Grandis, Inc. | Perpendicular magnetization magnetic element utilizing spin transfer |
| JP2007150265A (ja) * | 2005-10-28 | 2007-06-14 | Toshiba Corp | 磁気抵抗効果素子および磁気記憶装置 |
-
2009
- 2009-10-13 JP JP2009236542A patent/JP5172808B2/ja active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4738395B2 (ja) | 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ | |
| JP5367739B2 (ja) | 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ | |
| JP5172808B2 (ja) | 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ | |
| JP2011119755A5 (enExample) | ||
| CN102176510B (zh) | 磁电阻效应元件和使用它的磁电阻随机存取存储器 | |
| JP2010010720A5 (enExample) | ||
| JP5096702B2 (ja) | 磁気抵抗効果素子及びそれを搭載した不揮発性磁気メモリ | |
| US8274818B2 (en) | Magnetoresistive element, magnetic memory cell and magnetic random access memory using the same | |
| US20090080124A1 (en) | Magnetoresistive element and magnetoresistive random access memory including the same | |
| JP4380693B2 (ja) | 記憶素子、メモリ | |
| US20090251951A1 (en) | Magnetoresistive element and magnetic random access memory | |
| JP6180972B2 (ja) | 磁気抵抗素子および磁気メモリ | |
| JP6126565B2 (ja) | 磁気抵抗素子及び磁気メモリ | |
| TWI482152B (zh) | Memory device, memory device | |
| US10672977B2 (en) | Perpendicular magnetoresistive elements | |
| JP2012151213A5 (enExample) | ||
| JP2012151213A (ja) | 記憶素子、メモリ装置 | |
| KR101636492B1 (ko) | 메모리 소자 | |
| JP2007048790A (ja) | 記憶素子及びメモリ | |
| JP2006295001A (ja) | 記憶素子及びメモリ | |
| US10186656B2 (en) | Magnetoresistive element and magnetic memory | |
| WO2012014415A1 (ja) | 岩塩構造薄膜をシードとして用いた低抵抗かつ高効率のスピン注入素子 | |
| JP2025083284A (ja) | 磁気トンネル接合素子及びこれを含むメモリ装置 | |
| JP5591888B2 (ja) | 磁気抵抗効果素子及びそれを搭載した不揮発性磁気メモリ |