JP5167831B2 - Ｉｉｉ族窒化物半導体素子、およびその製造方法 - Google Patents

Ｉｉｉ族窒化物半導体素子、およびその製造方法 Download PDF

Info

Publication number
JP5167831B2
JP5167831B2 JP2008014244A JP2008014244A JP5167831B2 JP 5167831 B2 JP5167831 B2 JP 5167831B2 JP 2008014244 A JP2008014244 A JP 2008014244A JP 2008014244 A JP2008014244 A JP 2008014244A JP 5167831 B2 JP5167831 B2 JP 5167831B2
Authority
JP
Japan
Prior art keywords
layer
substrate
semiconductor
electrode
ceramic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008014244A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009176966A (ja
JP2009176966A5 (enExample
Inventor
俊也 上村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
Original Assignee
Toyoda Gosei Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyoda Gosei Co Ltd filed Critical Toyoda Gosei Co Ltd
Priority to JP2008014244A priority Critical patent/JP5167831B2/ja
Publication of JP2009176966A publication Critical patent/JP2009176966A/ja
Publication of JP2009176966A5 publication Critical patent/JP2009176966A5/ja
Application granted granted Critical
Publication of JP5167831B2 publication Critical patent/JP5167831B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Led Devices (AREA)
JP2008014244A 2008-01-24 2008-01-24 Ｉｉｉ族窒化物半導体素子、およびその製造方法 Expired - Fee Related JP5167831B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008014244A JP5167831B2 (ja) 2008-01-24 2008-01-24 Ｉｉｉ族窒化物半導体素子、およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008014244A JP5167831B2 (ja) 2008-01-24 2008-01-24 Ｉｉｉ族窒化物半導体素子、およびその製造方法

Publications (3)

Publication Number Publication Date
JP2009176966A JP2009176966A (ja) 2009-08-06
JP2009176966A5 JP2009176966A5 (enExample) 2010-06-24
JP5167831B2 true JP5167831B2 (ja) 2013-03-21

Family

ID=41031749

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008014244A Expired - Fee Related JP5167831B2 (ja) 2008-01-24 2008-01-24 Ｉｉｉ族窒化物半導体素子、およびその製造方法

Country Status (1)

Country Link
JP (1) JP5167831B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011086899A (ja) * 2009-09-15 2011-04-28 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子
US8471288B2 (en) 2009-09-15 2013-06-25 Toyoda Gosei Co., Ltd. Group III nitride semiconductor light-emitting device including an auxiliary electrode in contact with a back surface of an n-type layer
JP5356292B2 (ja) 2010-03-19 2013-12-04 株式会社東芝 半導体発光素子及び半導体発光装置
JP4778107B1 (ja) * 2010-10-19 2011-09-21 有限会社ナプラ 発光デバイス、及び、その製造方法
JP2014220533A (ja) * 2014-08-26 2014-11-20 株式会社東芝 半導体発光素子及び半導体発光装置
CN119092615B (zh) * 2024-09-29 2025-09-23 厦门乾照光电股份有限公司 一种led芯片及其制作方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003124408A (ja) * 2001-10-11 2003-04-25 Tokuyama Corp 放熱性基板
DE10355600B4 (de) * 2003-11-28 2021-06-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip und Verfahren zur Herstellung von Halbleiterchips
JP2006303034A (ja) * 2005-04-18 2006-11-02 Sanyo Electric Co Ltd 窒化物系半導体素子の作製方法
JP2007207981A (ja) * 2006-02-01 2007-08-16 Rohm Co Ltd 窒化物半導体発光素子の製造方法
JP5186800B2 (ja) * 2007-04-28 2013-04-24 日亜化学工業株式会社 窒化物半導体発光素子、これを備える発光装置及び窒化物半導体発光素子の製造方法

Also Published As

Publication number Publication date
JP2009176966A (ja) 2009-08-06

Similar Documents

Publication Publication Date Title
TWI401819B (zh) 垂直發光二極體之製造方法
CN102067341B (zh) 发光器件和用于制造发光器件的方法
JP5220916B2 (ja) 発光素子及びその製造方法
CN100536184C (zh) 垂直的氮化镓基发光二极管及其制造方法
JP2008186959A (ja) Ｉｉｉ−ｖ族半導体素子、およびその製造方法
JP5983125B2 (ja) 半導体発光素子の製造方法
CN106575687B (zh) 发光二极管及其制造方法
JP5245970B2 (ja) 発光ダイオード及びその製造方法、並びにランプ
JP5167831B2 (ja) Ｉｉｉ族窒化物半導体素子、およびその製造方法
JP2009176966A5 (enExample)
CN102800764B (zh) 半导体发光装置及其制造方法
JP4459871B2 (ja) 熱経路が形成された粘着層を有する発光ダイオード
KR20090105462A (ko) 수직구조 그룹 3족 질화물계 반도체 발광다이오드 소자 및이의 제조 방법
CN102544274A (zh) 晶片衬底结合结构、发光器件和用于制造发光器件的方法
KR100953661B1 (ko) 수직 전극 구조 발광 소자 및 그 제조 방법
JP4835409B2 (ja) Ｉｉｉ−ｖ族半導体素子、およびその製造方法
KR20090106294A (ko) 수직구조 그룹 3족 질화물계 반도체 발광다이오드 소자 및이의 제조 방법
JP5165633B2 (ja) 化合物半導体発光素子及びその製造方法
KR20110082863A (ko) 반도체 발광소자용 지지 웨이퍼, 그 제조 방법 및 이를 이용한 수직 구조 반도체 발광소자의 제조 방법
TW201318236A (zh) 具增大面積之氮化鎵發光二極體及其製造方法
US11888091B2 (en) Semiconductor light emitting device and light emitting device package
JP2007096090A (ja) 半導体発光素子及び半導体発光素子の製造方法
US20060243991A1 (en) Light emitting diode and manufacturing method thereof
KR101709992B1 (ko) 발광소자
JP2020141037A (ja) 半導体素子の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100511

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100723

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120215

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120228

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120423

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20121127

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20121210

R150 Certificate of patent or registration of utility model

Ref document number: 5167831

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees