JP2009176966A5 - - Google Patents

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Publication number
JP2009176966A5
JP2009176966A5 JP2008014244A JP2008014244A JP2009176966A5 JP 2009176966 A5 JP2009176966 A5 JP 2009176966A5 JP 2008014244 A JP2008014244 A JP 2008014244A JP 2008014244 A JP2008014244 A JP 2008014244A JP 2009176966 A5 JP2009176966 A5 JP 2009176966A5
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JP
Japan
Prior art keywords
substrate
semiconductor
electrode
layer
ceramic
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JP2008014244A
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English (en)
Japanese (ja)
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JP2009176966A (ja
JP5167831B2 (ja
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Priority claimed from JP2008014244A external-priority patent/JP5167831B2/ja
Publication of JP2009176966A publication Critical patent/JP2009176966A/ja
Publication of JP2009176966A5 publication Critical patent/JP2009176966A5/ja
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Publication of JP5167831B2 publication Critical patent/JP5167831B2/ja
Expired - Fee Related legal-status Critical Current
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JP2008014244A 2008-01-24 2008-01-24 Ｉｉｉ族窒化物半導体素子、およびその製造方法 Expired - Fee Related JP5167831B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008014244A JP5167831B2 (ja) 2008-01-24 2008-01-24 Ｉｉｉ族窒化物半導体素子、およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008014244A JP5167831B2 (ja) 2008-01-24 2008-01-24 Ｉｉｉ族窒化物半導体素子、およびその製造方法

Publications (3)

Publication Number Publication Date
JP2009176966A JP2009176966A (ja) 2009-08-06
JP2009176966A5 true JP2009176966A5 (enExample) 2010-06-24
JP5167831B2 JP5167831B2 (ja) 2013-03-21

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ID=41031749

Family Applications (1)

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JP2008014244A Expired - Fee Related JP5167831B2 (ja) 2008-01-24 2008-01-24 Ｉｉｉ族窒化物半導体素子、およびその製造方法

Country Status (1)

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JP (1) JP5167831B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011086899A (ja) * 2009-09-15 2011-04-28 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子
US8471288B2 (en) 2009-09-15 2013-06-25 Toyoda Gosei Co., Ltd. Group III nitride semiconductor light-emitting device including an auxiliary electrode in contact with a back surface of an n-type layer
JP5356292B2 (ja) 2010-03-19 2013-12-04 株式会社東芝 半導体発光素子及び半導体発光装置
JP4778107B1 (ja) * 2010-10-19 2011-09-21 有限会社ナプラ 発光デバイス、及び、その製造方法
JP2014220533A (ja) * 2014-08-26 2014-11-20 株式会社東芝 半導体発光素子及び半導体発光装置
CN119092615B (zh) * 2024-09-29 2025-09-23 厦门乾照光电股份有限公司 一种led芯片及其制作方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003124408A (ja) * 2001-10-11 2003-04-25 Tokuyama Corp 放熱性基板
DE10355600B4 (de) * 2003-11-28 2021-06-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip und Verfahren zur Herstellung von Halbleiterchips
JP2006303034A (ja) * 2005-04-18 2006-11-02 Sanyo Electric Co Ltd 窒化物系半導体素子の作製方法
JP2007207981A (ja) * 2006-02-01 2007-08-16 Rohm Co Ltd 窒化物半導体発光素子の製造方法
JP5186800B2 (ja) * 2007-04-28 2013-04-24 日亜化学工業株式会社 窒化物半導体発光素子、これを備える発光装置及び窒化物半導体発光素子の製造方法

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