CN100536184C - 垂直的氮化镓基发光二极管及其制造方法 - Google Patents
垂直的氮化镓基发光二极管及其制造方法 Download PDFInfo
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- CN100536184C CN100536184C CN 200710097453 CN200710097453A CN100536184C CN 100536184 C CN100536184 C CN 100536184C CN 200710097453 CN200710097453 CN 200710097453 CN 200710097453 A CN200710097453 A CN 200710097453A CN 100536184 C CN100536184 C CN 100536184C
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Applications Claiming Priority (3)
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KR20060079703 | 2006-08-23 | ||
KR1020060079703 | 2006-08-23 | ||
KR1020070017519 | 2007-02-21 |
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CN 200810184082 Division CN101442096B (zh) | 2006-08-23 | 2007-04-29 | 垂直的氮化镓基发光二极管及其制造方法 |
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CN101132040A CN101132040A (zh) | 2008-02-27 |
CN100536184C true CN100536184C (zh) | 2009-09-02 |
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CN 200810184082 Active CN101442096B (zh) | 2006-08-23 | 2007-04-29 | 垂直的氮化镓基发光二极管及其制造方法 |
CN 200710097453 Active CN100536184C (zh) | 2006-08-23 | 2007-04-29 | 垂直的氮化镓基发光二极管及其制造方法 |
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CN 200810184082 Active CN101442096B (zh) | 2006-08-23 | 2007-04-29 | 垂直的氮化镓基发光二极管及其制造方法 |
Country Status (3)
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JP (1) | JP5376467B2 (zh) |
KR (1) | KR100856089B1 (zh) |
CN (2) | CN101442096B (zh) |
Families Citing this family (42)
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KR100975659B1 (ko) | 2007-12-18 | 2010-08-17 | 포항공과대학교 산학협력단 | 발광 소자 및 그 제조 방법 |
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KR100962900B1 (ko) | 2008-11-18 | 2010-06-10 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
KR101047634B1 (ko) | 2008-11-24 | 2011-07-07 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
KR101014045B1 (ko) | 2009-02-18 | 2011-02-10 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
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KR101405742B1 (ko) * | 2010-02-24 | 2014-06-10 | 엘지이노텍 주식회사 | 반도체 발광소자 |
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KR101020963B1 (ko) | 2010-04-23 | 2011-03-09 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지 |
KR101646664B1 (ko) * | 2010-05-18 | 2016-08-08 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자의 제조방법 및 발광 소자 패키지 |
CN103222073B (zh) * | 2010-08-03 | 2017-03-29 | 财团法人工业技术研究院 | 发光二极管芯片、发光二极管封装结构、及用以形成上述的方法 |
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KR20120079392A (ko) * | 2011-01-04 | 2012-07-12 | (주)세미머티리얼즈 | 반도체 발광소자의 제조방법 |
CN102709405A (zh) * | 2011-03-28 | 2012-10-03 | 同方光电科技有限公司 | 一种发光二极管金属基板的制作方法 |
CN102709406B (zh) * | 2011-03-28 | 2014-04-16 | 同方光电科技有限公司 | 一种具备可裂解性铜衬底发光二极管的制备方法 |
US8349116B1 (en) | 2011-11-18 | 2013-01-08 | LuxVue Technology Corporation | Micro device transfer head heater assembly and method of transferring a micro device |
US8794501B2 (en) | 2011-11-18 | 2014-08-05 | LuxVue Technology Corporation | Method of transferring a light emitting diode |
KR101283444B1 (ko) * | 2012-03-22 | 2013-07-08 | 배정운 | 수평형 파워 led 소자 및 그 제조방법 |
US8759128B2 (en) * | 2012-03-22 | 2014-06-24 | SemiLEDs Optoelectronics Co., Ltd. | Light emitting diode (LED) die having recessed electrode and light extraction structures and method of fabrication |
JP6164560B2 (ja) | 2012-03-22 | 2017-07-19 | シーエルフォトニクス カンパニー,リミテッド | 水平型パワーled素子及びその製造方法 |
US9548332B2 (en) * | 2012-04-27 | 2017-01-17 | Apple Inc. | Method of forming a micro LED device with self-aligned metallization stack |
JP2014041964A (ja) * | 2012-08-23 | 2014-03-06 | Sharp Corp | 窒化物半導体発光素子の製造方法および窒化物半導体発光素子 |
KR101969308B1 (ko) * | 2012-10-26 | 2019-04-17 | 삼성전자주식회사 | 반도체 발광소자 및 그 제조 방법 |
KR101340322B1 (ko) * | 2013-03-11 | 2013-12-11 | 배정운 | 수평형 파워 led 소자 |
JP2015002239A (ja) * | 2013-06-14 | 2015-01-05 | シャープ株式会社 | 窒化物半導体発光素子および窒化物半導体発光素子の製造方法 |
CN104132976A (zh) * | 2014-06-11 | 2014-11-05 | 中国科学院长春应用化学研究所 | Ito导电玻璃表面电沉积超稳定金属薄膜原位构建电极的方法 |
CN104064639A (zh) * | 2014-07-04 | 2014-09-24 | 映瑞光电科技(上海)有限公司 | 垂直型led结构及其制作方法 |
CN107026227A (zh) * | 2016-01-29 | 2017-08-08 | 映瑞光电科技(上海)有限公司 | 具有光滑侧壁的垂直led芯片结构的制备方法 |
CN105514230B (zh) * | 2016-03-03 | 2018-11-09 | 映瑞光电科技(上海)有限公司 | GaN基LED垂直芯片结构及其制备方法 |
CN105720140A (zh) * | 2016-03-03 | 2016-06-29 | 映瑞光电科技(上海)有限公司 | GaN基LED垂直芯片结构及制备方法 |
CN105870264A (zh) * | 2016-03-03 | 2016-08-17 | 映瑞光电科技(上海)有限公司 | 具有倒金字塔型侧壁的GaN基LED垂直芯片结构及制备方法 |
CN105789386A (zh) * | 2016-03-21 | 2016-07-20 | 映瑞光电科技(上海)有限公司 | 一种提高垂直led芯片电流扩展的制作方法 |
JP6755230B2 (ja) * | 2017-11-16 | 2020-09-16 | シャープ株式会社 | 窒化物半導体発光素子および窒化物半導体発光素子の製造方法 |
CN112864293A (zh) * | 2021-02-24 | 2021-05-28 | 江苏大学 | 一种垂直结构深紫外led芯片及其制造方法 |
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JP4233268B2 (ja) * | 2002-04-23 | 2009-03-04 | シャープ株式会社 | 窒化物系半導体発光素子およびその製造方法 |
US6649437B1 (en) * | 2002-08-20 | 2003-11-18 | United Epitaxy Company, Ltd. | Method of manufacturing high-power light emitting diodes |
DE10245631B4 (de) * | 2002-09-30 | 2022-01-20 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterbauelement |
JP4159865B2 (ja) * | 2002-12-11 | 2008-10-01 | シャープ株式会社 | 窒化物系化合物半導体発光素子の製造方法 |
JP4295669B2 (ja) * | 2003-05-22 | 2009-07-15 | パナソニック株式会社 | 半導体素子の製造方法 |
US7244628B2 (en) * | 2003-05-22 | 2007-07-17 | Matsushita Electric Industrial Co., Ltd. | Method for fabricating semiconductor devices |
TWI344706B (en) * | 2003-06-04 | 2011-07-01 | Myung Cheol Yoo | Method of fabricating vertical structure compound semiconductor devices |
KR100586949B1 (ko) * | 2004-01-19 | 2006-06-07 | 삼성전기주식회사 | 플립칩용 질화물 반도체 발광소자 |
WO2005088743A1 (en) * | 2004-03-15 | 2005-09-22 | Tinggi Technologies Private Limited | Fabrication of semiconductor devices |
JP2005268642A (ja) * | 2004-03-19 | 2005-09-29 | Uni Light Technology Inc | 金属ベースを有する発光ダイオードの形成方法 |
KR101254539B1 (ko) * | 2004-04-28 | 2013-04-19 | 버티클 인코퍼레이티드 | 수직 구조 반도체 장치 |
US7148075B2 (en) * | 2004-06-05 | 2006-12-12 | Hui Peng | Vertical semiconductor devices or chips and method of mass production of the same |
KR100617873B1 (ko) * | 2005-07-15 | 2006-08-28 | 엘지전자 주식회사 | 수직형 발광 다이오드 및 그 제조방법 |
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2007
- 2007-02-21 KR KR1020070017519A patent/KR100856089B1/ko not_active IP Right Cessation
- 2007-04-29 CN CN 200810184082 patent/CN101442096B/zh active Active
- 2007-04-29 CN CN 200710097453 patent/CN100536184C/zh active Active
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2010
- 2010-10-15 JP JP2010232347A patent/JP5376467B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR100856089B1 (ko) | 2008-09-02 |
CN101442096B (zh) | 2011-11-02 |
CN101132040A (zh) | 2008-02-27 |
CN101442096A (zh) | 2009-05-27 |
KR20080018084A (ko) | 2008-02-27 |
JP5376467B2 (ja) | 2013-12-25 |
JP2011009796A (ja) | 2011-01-13 |
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Owner name: SAMSUNG LED CO., LTD. Free format text: FORMER OWNER: SAMSUNG ELECTRO-MECHANICS CO., LTD. Effective date: 20100826 |
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Effective date of registration: 20100826 Address after: Gyeonggi Do, South Korea Patentee after: Samsung LED Co., Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Samsung Electro-Mechanics Co., Ltd. |
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Owner name: SAMSUNG ELECTRONICS CO., LTD. Free format text: FORMER OWNER: SAMSUNG LED CO., LTD. Effective date: 20121211 |
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Effective date of registration: 20121211 Address after: Gyeonggi Do, South Korea Patentee after: Samsung Electronics Co., Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Samsung LED Co., Ltd. |