JP5160730B2 - ビーム状プラズマ源 - Google Patents
ビーム状プラズマ源 Download PDFInfo
- Publication number
- JP5160730B2 JP5160730B2 JP2004537902A JP2004537902A JP5160730B2 JP 5160730 B2 JP5160730 B2 JP 5160730B2 JP 2004537902 A JP2004537902 A JP 2004537902A JP 2004537902 A JP2004537902 A JP 2004537902A JP 5160730 B2 JP5160730 B2 JP 5160730B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- discharge cavity
- source
- nozzle
- plasma source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 claims description 66
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- 238000007667 floating Methods 0.000 claims description 7
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- 239000007789 gas Substances 0.000 description 53
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 22
- 150000002500 ions Chemical class 0.000 description 22
- 238000000576 coating method Methods 0.000 description 17
- 239000011248 coating agent Substances 0.000 description 16
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 12
- 229910052786 argon Inorganic materials 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 11
- 239000012212 insulator Substances 0.000 description 10
- 238000010894 electron beam technology Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 5
- 239000000178 monomer Substances 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910001209 Low-carbon steel Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
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- 239000010406 cathode material Substances 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000005328 architectural glass Substances 0.000 description 1
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- 239000005357 flat glass Substances 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000004811 fluoropolymer Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/08—Ion sources; Ion guns using arc discharge
- H01J27/14—Other arc discharge ion sources using an applied magnetic field
- H01J27/146—End-Hall type ion sources, wherein the magnetic field confines the electrons in a central cylinder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0815—Methods of ionisation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electromagnetism (AREA)
- Combustion & Propulsion (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
- Electron Sources, Ion Sources (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US41205102P | 2002-09-19 | 2002-09-19 | |
| US60/412,051 | 2002-09-19 | ||
| PCT/US2003/029204 WO2004027825A2 (en) | 2002-09-19 | 2003-09-19 | Beam plasma source |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012005596A Division JP5642721B2 (ja) | 2002-09-19 | 2012-01-13 | ビーム状プラズマ源 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006500740A JP2006500740A (ja) | 2006-01-05 |
| JP5160730B2 true JP5160730B2 (ja) | 2013-03-13 |
Family
ID=32030790
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004537902A Expired - Fee Related JP5160730B2 (ja) | 2002-09-19 | 2003-09-19 | ビーム状プラズマ源 |
| JP2012005596A Expired - Fee Related JP5642721B2 (ja) | 2002-09-19 | 2012-01-13 | ビーム状プラズマ源 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012005596A Expired - Fee Related JP5642721B2 (ja) | 2002-09-19 | 2012-01-13 | ビーム状プラズマ源 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7327089B2 (cg-RX-API-DMAC7.html) |
| EP (1) | EP1554412B1 (cg-RX-API-DMAC7.html) |
| JP (2) | JP5160730B2 (cg-RX-API-DMAC7.html) |
| AU (1) | AU2003299015A1 (cg-RX-API-DMAC7.html) |
| WO (1) | WO2004027825A2 (cg-RX-API-DMAC7.html) |
Families Citing this family (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7411352B2 (en) * | 2002-09-19 | 2008-08-12 | Applied Process Technologies, Inc. | Dual plasma beam sources and method |
| FR2857555B1 (fr) * | 2003-07-09 | 2005-10-14 | Snecma Moteurs | Accelerateur a plasma a derive fermee d'electrons |
| US7312579B2 (en) * | 2006-04-18 | 2007-12-25 | Colorado Advanced Technology Llc | Hall-current ion source for ion beams of low and high energy for technological applications |
| US20110233049A1 (en) * | 2007-08-30 | 2011-09-29 | Koninklijke Philips Electronics N.V. | Sputtering system |
| DE102008028542B4 (de) * | 2008-06-16 | 2012-07-12 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und Vorrichtung zum Abscheiden einer Schicht auf einem Substrat mittels einer plasmagestützten chemischen Reaktion |
| TWI532414B (zh) | 2008-08-04 | 2016-05-01 | Agc北美平面玻璃公司 | 電漿源及使用電漿增強化學氣相沉積以沉積薄膜塗層之方法 |
| DE102009037853B3 (de) * | 2009-08-18 | 2011-03-31 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Gasflusssputterquelle |
| JPWO2012172630A1 (ja) * | 2011-06-13 | 2015-02-23 | トヨタ自動車株式会社 | 表面加工装置及び表面加工方法 |
| US8617350B2 (en) | 2011-06-15 | 2013-12-31 | Belight Technology Corporation, Limited | Linear plasma system |
| US10304665B2 (en) | 2011-09-07 | 2019-05-28 | Nano-Product Engineering, LLC | Reactors for plasma-assisted processes and associated methods |
| US9761424B1 (en) | 2011-09-07 | 2017-09-12 | Nano-Product Engineering, LLC | Filtered cathodic arc method, apparatus and applications thereof |
| DE102011112759A1 (de) * | 2011-09-08 | 2013-03-14 | Oerlikon Trading Ag, Trübbach | Plasmaquelle |
| CN102523673A (zh) * | 2011-12-19 | 2012-06-27 | 北京大学 | 一种采用磁镜场约束的等离子体密封窗及其密封方法 |
| US9412569B2 (en) | 2012-09-14 | 2016-08-09 | Vapor Technologies, Inc. | Remote arc discharge plasma assisted processes |
| US9793098B2 (en) | 2012-09-14 | 2017-10-17 | Vapor Technologies, Inc. | Low pressure arc plasma immersion coating vapor deposition and ion treatment |
| US10056237B2 (en) | 2012-09-14 | 2018-08-21 | Vapor Technologies, Inc. | Low pressure arc plasma immersion coating vapor deposition and ion treatment |
| CN105008585A (zh) | 2012-12-28 | 2015-10-28 | 零件喷涂公司 | 等离子体增强的化学气相沉积(pecvd)源 |
| JP6134394B2 (ja) | 2013-02-06 | 2017-05-24 | アルセロルミッタル インベスティガシオン イ デサロージョ エセ.エレ. | プラズマ源および当該プラズマ源を備える真空蒸着装置 |
| WO2014201285A1 (en) * | 2013-06-12 | 2014-12-18 | General Plasma, Inc. | Linear duoplasmatron |
| JP6403269B2 (ja) * | 2014-07-30 | 2018-10-10 | 株式会社神戸製鋼所 | アーク蒸発源 |
| US9968016B2 (en) * | 2014-08-11 | 2018-05-08 | Toyota Motor Engineering & Manufacturing North America, Inc. | Magnetic field shield |
| EP3212696B1 (en) | 2014-10-29 | 2018-10-24 | PPG Industries Ohio, Inc. | Protective coating system for plastic substrate |
| CN104411082B (zh) * | 2014-11-12 | 2017-12-19 | 中国科学院深圳先进技术研究院 | 等离子源系统和等离子生成方法 |
| EA201791237A1 (ru) | 2014-12-05 | 2017-11-30 | Эй-Джи-Си Флет Гласс Норт Эмерике, Инк. | Плазменный источник с применением уменьшающего образование макрочастиц покрытия и способ использования плазменного источника с применением уменьшающего образование макрочастиц покрытия для осаждения тонкопленочных покрытий и модификации поверхностей |
| EA201791234A1 (ru) | 2014-12-05 | 2017-11-30 | Эй-Джи-Си Гласс Юроуп, С.А. | Плазменный источник с полым катодом |
| US9721765B2 (en) | 2015-11-16 | 2017-08-01 | Agc Flat Glass North America, Inc. | Plasma device driven by multiple-phase alternating or pulsed electrical current |
| US9721764B2 (en) | 2015-11-16 | 2017-08-01 | Agc Flat Glass North America, Inc. | Method of producing plasma by multiple-phase alternating or pulsed electrical current |
| US10192708B2 (en) * | 2015-11-20 | 2019-01-29 | Oregon Physics, Llc | Electron emitter source |
| US10242846B2 (en) | 2015-12-18 | 2019-03-26 | Agc Flat Glass North America, Inc. | Hollow cathode ion source |
| US10573499B2 (en) | 2015-12-18 | 2020-02-25 | Agc Flat Glass North America, Inc. | Method of extracting and accelerating ions |
| US10957519B2 (en) | 2015-12-21 | 2021-03-23 | Ionquest Corp. | Magnetically enhanced high density plasma-chemical vapor deposition plasma source for depositing diamond and diamond-like films |
| US11359274B2 (en) | 2015-12-21 | 2022-06-14 | IonQuestCorp. | Electrically and magnetically enhanced ionized physical vapor deposition unbalanced sputtering source |
| US11823859B2 (en) | 2016-09-09 | 2023-11-21 | Ionquest Corp. | Sputtering a layer on a substrate using a high-energy density plasma magnetron |
| US12217949B2 (en) | 2015-12-21 | 2025-02-04 | Ionquest Corp. | Magnetically enhanced high density plasma-chemical vapor deposition plasma source for depositing diamond and diamond-like films |
| US10480063B2 (en) | 2015-12-21 | 2019-11-19 | Ionquest Corp. | Capacitive coupled plasma source for sputtering and resputtering |
| US11482404B2 (en) | 2015-12-21 | 2022-10-25 | Ionquest Corp. | Electrically and magnetically enhanced ionized physical vapor deposition unbalanced sputtering source |
| WO2019154490A1 (en) * | 2018-02-07 | 2019-08-15 | Applied Materials, Inc. | Deposition apparatus, method of coating a flexible substrate and flexible substrate having a coating |
| US11834204B1 (en) | 2018-04-05 | 2023-12-05 | Nano-Product Engineering, LLC | Sources for plasma assisted electric propulsion |
| TWI686106B (zh) * | 2019-01-25 | 2020-02-21 | 國立清華大學 | 場發射手持式常壓電漿產生裝置 |
| WO2020198012A1 (en) * | 2019-03-26 | 2020-10-01 | Board Of Trustees Of Michigan State University | Single beam plasma source |
| CN113365402B (zh) * | 2020-03-06 | 2023-04-07 | 上海宏澎能源科技有限公司 | 限制等离子束的装置 |
| JP7708515B2 (ja) * | 2021-10-06 | 2025-07-15 | 東京エレクトロン株式会社 | プラズマエッチング装置、及びプラズマエッチング方法 |
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| US3878085A (en) * | 1973-07-05 | 1975-04-15 | Sloan Technology Corp | Cathode sputtering apparatus |
| US4529571A (en) * | 1982-10-27 | 1985-07-16 | The United States Of America As Represented By The United States Department Of Energy | Single-ring magnetic cusp low gas pressure ion source |
| US4727293A (en) * | 1984-08-16 | 1988-02-23 | Board Of Trustees Operating Michigan State University | Plasma generating apparatus using magnets and method |
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| IT1211938B (it) * | 1987-11-27 | 1989-11-08 | Siv Soc Italiana Vetro | Apparecchiatura e procedimento per la deposizione di uno strato sottile su un substrato trasparente, particolarmente per la realizzazione di vetrature |
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| US6137231A (en) * | 1996-09-10 | 2000-10-24 | The Regents Of The University Of California | Constricted glow discharge plasma source |
| JP4043089B2 (ja) * | 1997-02-24 | 2008-02-06 | 株式会社エフオーアイ | プラズマ処理装置 |
| US6103074A (en) | 1998-02-14 | 2000-08-15 | Phygen, Inc. | Cathode arc vapor deposition method and apparatus |
| JPH11297673A (ja) * | 1998-04-15 | 1999-10-29 | Hitachi Ltd | プラズマ処理装置及びクリーニング方法 |
| AUPP479298A0 (en) * | 1998-07-21 | 1998-08-13 | Sainty, Wayne | Ion source |
| JP2965293B1 (ja) * | 1998-11-10 | 1999-10-18 | 川崎重工業株式会社 | 電子ビーム励起プラズマ発生装置 |
| DE10060002B4 (de) * | 1999-12-07 | 2016-01-28 | Komatsu Ltd. | Vorrichtung zur Oberflächenbehandlung |
| US6444100B1 (en) * | 2000-02-11 | 2002-09-03 | Seagate Technology Llc | Hollow cathode sputter source |
| JP3865570B2 (ja) * | 2000-06-16 | 2007-01-10 | 伊藤光学工業株式会社 | プラズマ加工法 |
| US6446572B1 (en) * | 2000-08-18 | 2002-09-10 | Tokyo Electron Limited | Embedded plasma source for plasma density improvement |
| US6444945B1 (en) * | 2001-03-28 | 2002-09-03 | Cp Films, Inc. | Bipolar plasma source, plasma sheet source, and effusion cell utilizing a bipolar plasma source |
| US20020153103A1 (en) * | 2001-04-20 | 2002-10-24 | Applied Process Technologies, Inc. | Plasma treatment apparatus |
| US7294283B2 (en) * | 2001-04-20 | 2007-11-13 | Applied Process Technologies, Inc. | Penning discharge plasma source |
| EP1390558B1 (en) * | 2001-04-20 | 2011-01-19 | General Plasma, Inc. | Penning discharge plasma source |
| US7023128B2 (en) * | 2001-04-20 | 2006-04-04 | Applied Process Technologies, Inc. | Dipole ion source |
| SE525231C2 (sv) | 2001-06-14 | 2005-01-11 | Chemfilt R & D Ab | Förfarande och anordning för att alstra plasma |
| US7025833B2 (en) * | 2002-02-27 | 2006-04-11 | Applied Process Technologies, Inc. | Apparatus and method for web cooling in a vacuum coating chamber |
| US6919672B2 (en) * | 2002-04-10 | 2005-07-19 | Applied Process Technologies, Inc. | Closed drift ion source |
| CH707466B1 (de) | 2002-10-03 | 2014-07-15 | Tetra Laval Holdings & Finance | Vorrichtung zur Durchführung eines Plasma-unterstützten Prozesses. |
| US7259378B2 (en) * | 2003-04-10 | 2007-08-21 | Applied Process Technologies, Inc. | Closed drift ion source |
| US7038389B2 (en) * | 2003-05-02 | 2006-05-02 | Applied Process Technologies, Inc. | Magnetron plasma source |
| WO2006007504A1 (en) | 2004-07-01 | 2006-01-19 | Cardinal Cg Company | Cylindrical target with oscillating magnet from magnetron sputtering |
-
2003
- 2003-09-19 WO PCT/US2003/029204 patent/WO2004027825A2/en not_active Ceased
- 2003-09-19 EP EP03756819.3A patent/EP1554412B1/en not_active Expired - Lifetime
- 2003-09-19 US US10/528,386 patent/US7327089B2/en not_active Expired - Fee Related
- 2003-09-19 AU AU2003299015A patent/AU2003299015A1/en not_active Abandoned
- 2003-09-19 JP JP2004537902A patent/JP5160730B2/ja not_active Expired - Fee Related
-
2012
- 2012-01-13 JP JP2012005596A patent/JP5642721B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP1554412B1 (en) | 2013-08-14 |
| EP1554412A2 (en) | 2005-07-20 |
| WO2004027825A2 (en) | 2004-04-01 |
| JP5642721B2 (ja) | 2014-12-17 |
| US20060152162A1 (en) | 2006-07-13 |
| US7327089B2 (en) | 2008-02-05 |
| JP2006500740A (ja) | 2006-01-05 |
| AU2003299015A8 (en) | 2004-04-08 |
| WO2004027825A3 (en) | 2005-04-28 |
| AU2003299015A1 (en) | 2004-04-08 |
| EP1554412A4 (en) | 2010-03-10 |
| JP2012124168A (ja) | 2012-06-28 |
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