JP5156752B2 - チャンバーコンポーネントを洗浄する方法及び装置 - Google Patents
チャンバーコンポーネントを洗浄する方法及び装置 Download PDFInfo
- Publication number
- JP5156752B2 JP5156752B2 JP2009535302A JP2009535302A JP5156752B2 JP 5156752 B2 JP5156752 B2 JP 5156752B2 JP 2009535302 A JP2009535302 A JP 2009535302A JP 2009535302 A JP2009535302 A JP 2009535302A JP 5156752 B2 JP5156752 B2 JP 5156752B2
- Authority
- JP
- Japan
- Prior art keywords
- orifice
- cleaning solution
- component
- fluid
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B5/00—Cleaning by methods involving the use of air flow or gas flow
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
- B08B9/02—Cleaning pipes or tubes or systems of pipes or tubes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US86390606P | 2006-11-01 | 2006-11-01 | |
| US60/863,906 | 2006-11-01 | ||
| PCT/US2007/022978 WO2008057351A2 (en) | 2006-11-01 | 2007-10-31 | Methods and apparatus for cleaning chamber components |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010508145A JP2010508145A (ja) | 2010-03-18 |
| JP2010508145A5 JP2010508145A5 (OSRAM) | 2010-12-09 |
| JP5156752B2 true JP5156752B2 (ja) | 2013-03-06 |
Family
ID=39365035
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009535302A Expired - Fee Related JP5156752B2 (ja) | 2006-11-01 | 2007-10-31 | チャンバーコンポーネントを洗浄する方法及び装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7789969B2 (OSRAM) |
| JP (1) | JP5156752B2 (OSRAM) |
| KR (1) | KR101432161B1 (OSRAM) |
| TW (1) | TWI381888B (OSRAM) |
| WO (1) | WO2008057351A2 (OSRAM) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7754609B1 (en) | 2003-10-28 | 2010-07-13 | Applied Materials, Inc. | Cleaning processes for silicon carbide materials |
| KR101432161B1 (ko) | 2006-11-01 | 2014-08-20 | 퀀텀 글로벌 테크놀로지스, 엘엘씨 | 챔버 부품을 세정하기 위한 방법 및 장치 |
| US8097089B2 (en) * | 2007-12-19 | 2012-01-17 | Quantum Global Technologies LLC | Methods for cleaning process kits and chambers, and for ruthenium recovery |
| US8075701B2 (en) * | 2008-06-30 | 2011-12-13 | Lam Research Corporation | Processes for reconditioning multi-component electrodes |
| CN201419170Y (zh) * | 2009-03-18 | 2010-03-10 | 鸿富锦精密工业(深圳)有限公司 | 吸嘴清洗装置 |
| US9999907B2 (en) | 2016-04-01 | 2018-06-19 | Applied Materials, Inc. | Cleaning process that precipitates yttrium oxy-flouride |
| US11776822B2 (en) * | 2018-05-29 | 2023-10-03 | Applied Materials, Inc. | Wet cleaning of electrostatic chuck |
Family Cites Families (99)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3992454A (en) | 1971-04-26 | 1976-11-16 | Joseph W. Aidlin | Protective coating for articles |
| US3969195A (en) | 1971-05-07 | 1976-07-13 | Siemens Aktiengesellschaft | Methods of coating and surface finishing articles made of metals and their alloys |
| US4101386A (en) | 1971-05-07 | 1978-07-18 | Siemens Aktiengesellschaft | Methods of coating and surface finishing articles made of metals and their alloys |
| US3775202A (en) | 1972-03-13 | 1973-11-27 | Dea Prod Inc | Etching control system |
| JPS5144912B2 (OSRAM) | 1973-12-09 | 1976-12-01 | ||
| US4078963A (en) | 1973-12-10 | 1978-03-14 | U.S. Philips Corporation | Method of manufacturing a semiconductor device, having a pattern of conductors on a supporting body |
| US4232060A (en) | 1979-01-22 | 1980-11-04 | Richardson Chemical Company | Method of preparing substrate surface for electroless plating and products produced thereby |
| US3986653A (en) | 1974-09-03 | 1976-10-19 | Tribotech | Method for coating bonding tools and product |
| US4530120A (en) | 1975-06-30 | 1985-07-23 | Kenji Etani | Methods and apparatus for bathing |
| US4519914A (en) | 1975-06-30 | 1985-05-28 | Kenji Etani | Method for treating swimming pool water |
| US4139348A (en) | 1975-11-28 | 1979-02-13 | Massachusetts Institute Of Technology | Electrochemical process and apparatus to control the chemical state of a material |
| US4023936A (en) | 1976-06-14 | 1977-05-17 | Lukens Steel Company | Titanium clad steel and process for making |
| DE2656015A1 (de) | 1976-12-10 | 1978-06-15 | Bbc Brown Boveri & Cie | Verfahren zum herstellen von halbleiterbauelementen |
| JPS54115645A (en) | 1978-02-28 | 1979-09-08 | Ngk Insulators Ltd | Electrochemical treatment |
| US4220706A (en) | 1978-05-10 | 1980-09-02 | Rca Corporation | Etchant solution containing HF-HnO3 -H2 SO4 -H2 O2 |
| US4272612A (en) | 1979-05-09 | 1981-06-09 | The United States Of America As Represented By The Secretary Of The Army | Erosion lithography to abrade a pattern onto a substrate |
| US4327134A (en) | 1979-11-29 | 1982-04-27 | Alloy Surfaces Company, Inc. | Stripping of diffusion treated metals |
| US4367119A (en) | 1980-08-18 | 1983-01-04 | International Business Machines Corporation | Planar multi-level metal process with built-in etch stop |
| US4447824A (en) | 1980-08-18 | 1984-05-08 | International Business Machines Corporation | Planar multi-level metal process with built-in etch stop |
| US4459155A (en) | 1981-01-10 | 1984-07-10 | The British Petroleum Company Limited | Method of producing corrosion inhibitors |
| CA1200624A (en) | 1981-08-10 | 1986-02-11 | Susumu Muramoto | Method for the manufacture of semiconductor device using refractory metal in a lift-off step |
| JPS5825479A (ja) | 1982-08-04 | 1983-02-15 | Sawa Hyomen Giken Kk | エッチング加工用装置 |
| US4579569A (en) | 1982-10-14 | 1986-04-01 | Fume-Klean | Apparatus for neutralizing and removing fumes |
| US4638553A (en) | 1982-12-08 | 1987-01-27 | International Rectifier Corporation | Method of manufacture of semiconductor device |
| US4699082A (en) | 1983-02-25 | 1987-10-13 | Liburdi Engineering Limited | Apparatus for chemical vapor deposition |
| JPS62109997A (ja) | 1985-11-07 | 1987-05-21 | Kobe Steel Ltd | 弁金属の陽極酸化前処理方法 |
| JPS62204534A (ja) | 1986-03-04 | 1987-09-09 | Nec Corp | 反応性イオンエツチング方法 |
| US4863561A (en) | 1986-12-09 | 1989-09-05 | Texas Instruments Incorporated | Method and apparatus for cleaning integrated circuit wafers |
| US4971590A (en) | 1987-12-02 | 1990-11-20 | Zenith Electronics Corporation | Process for improving the emissivity of a non-based tension shadow mask |
| JPH0296334A (ja) | 1988-10-01 | 1990-04-09 | Nisso Eng Kk | 高温エッチング液の循環方法 |
| US4957583A (en) | 1989-04-28 | 1990-09-18 | Analog Devices, Inc. | Apparatus for etching patterned substrates |
| JPH0317288A (ja) | 1989-06-13 | 1991-01-25 | Daicel Chem Ind Ltd | スタンパー用電解洗浄液 |
| US4900398A (en) | 1989-06-19 | 1990-02-13 | General Motors Corporation | Chemical milling of titanium |
| US5248386A (en) | 1991-02-08 | 1993-09-28 | Aluminum Company Of America | Milling solution and method |
| KR100254653B1 (ko) | 1991-10-04 | 2000-05-01 | 월터 알란 이. | 대상물을 처리하는 방법 |
| JP2550248B2 (ja) | 1991-10-14 | 1996-11-06 | 株式会社東芝 | 半導体集積回路装置およびその製造方法 |
| US5152878A (en) | 1991-12-31 | 1992-10-06 | International Business Machines Corporation | Method for electrochemical cleaning of metal residue on molybdenum masks |
| US5221421A (en) | 1992-03-25 | 1993-06-22 | Hewlett-Packard Company | Controlled etching process for forming fine-geometry circuit lines on a substrate |
| US5555981A (en) | 1992-05-26 | 1996-09-17 | Empak, Inc. | Wafer suspension box |
| US5258093A (en) | 1992-12-21 | 1993-11-02 | Motorola, Inc. | Procss for fabricating a ferroelectric capacitor in a semiconductor device |
| US5593339A (en) | 1993-08-12 | 1997-01-14 | Church & Dwight Co., Inc. | Slurry cleaning process |
| US5840402A (en) | 1994-06-24 | 1998-11-24 | Sheldahl, Inc. | Metallized laminate material having ordered distribution of conductive through holes |
| US5516399A (en) | 1994-06-30 | 1996-05-14 | International Business Machines Corporation | Contactless real-time in-situ monitoring of a chemical etching |
| US5516730A (en) | 1994-08-26 | 1996-05-14 | Memc Electronic Materials, Inc. | Pre-thermal treatment cleaning process of wafers |
| US5665473A (en) | 1994-09-16 | 1997-09-09 | Tokuyama Corporation | Package for mounting a semiconductor device |
| US5614027A (en) | 1994-09-23 | 1997-03-25 | Church & Dwight Co., Inc. | Metal cleaner with novel anti-corrosion system |
| DE19616231A1 (de) | 1995-04-20 | 1996-10-24 | Vaillant Joh Gmbh & Co | Verfahren zum Steuern des Materialflusses von Bauteilen |
| US5882598A (en) | 1995-06-09 | 1999-03-16 | Scp Global Technologies | Wafer gap conductivity cell for characterizing process vessels and semiconductor fabrication processes and method of use |
| US5660640A (en) | 1995-06-16 | 1997-08-26 | Joray Corporation | Method of removing sputter deposition from components of vacuum deposition equipment |
| US6273950B1 (en) | 1996-04-18 | 2001-08-14 | Matsushita Electric Industrial Co., Ltd. | SiC device and method for manufacturing the same |
| US5851303A (en) | 1996-05-02 | 1998-12-22 | Hemlock Semiconductor Corporation | Method for removing metal surface contaminants from silicon |
| US6012966A (en) | 1996-05-10 | 2000-01-11 | Canon Kabushiki Kaisha | Precision polishing apparatus with detecting means |
| US5863801A (en) | 1996-06-14 | 1999-01-26 | Sarnoff Corporation | Automated nucleic acid isolation |
| US5891354A (en) | 1996-07-26 | 1999-04-06 | Fujitsu Limited | Methods of etching through wafers and substrates with a composite etch stop layer |
| US5975097A (en) | 1996-09-02 | 1999-11-02 | Tokyo Electron Limited | Processing apparatus for target processing substrate |
| US5966593A (en) | 1996-11-08 | 1999-10-12 | W. L. Gore & Associates, Inc. | Method of forming a wafer level contact sheet having a permanent z-axis material |
| US5766979A (en) | 1996-11-08 | 1998-06-16 | W. L. Gore & Associates, Inc. | Wafer level contact sheet and method of assembly |
| US5744214A (en) | 1997-01-30 | 1998-04-28 | International Business Machines Corporation | Corrosion resistant molybdenum mask |
| US6767840B1 (en) | 1997-02-21 | 2004-07-27 | Canon Kabushiki Kaisha | Wafer processing apparatus, wafer processing method, and semiconductor substrate fabrication method |
| TW504041U (en) | 1997-02-21 | 2002-09-21 | Canon Kk | Wafer processing apparatus |
| KR19980069634A (ko) | 1997-02-28 | 1998-10-26 | 김광호 | 반도체 웨이퍼 이송용 로봇 |
| US5888308A (en) | 1997-02-28 | 1999-03-30 | International Business Machines Corporation | Process for removing residue from screening masks with alkaline solution |
| US5929521A (en) | 1997-03-26 | 1999-07-27 | Micron Technology, Inc. | Projected contact structure for bumped semiconductor device and resulting articles and assemblies |
| JP3667493B2 (ja) | 1997-05-06 | 2005-07-06 | ヤマハ株式会社 | 半導体装置の製造方法 |
| US5789363A (en) | 1997-05-06 | 1998-08-04 | Church & Dwight Co., Inc. | Aqueous alkaline cleaning composition containing surfactant mixture of N-octyl-2-pyrrolidone and N-coco-beta-aminocarboxylic (C2 -C4) acid for cleaning substrates and method of using same |
| US6187216B1 (en) | 1997-08-27 | 2001-02-13 | Motorola, Inc. | Method for etching a dielectric layer over a semiconductor substrate |
| JP3687314B2 (ja) | 1997-11-20 | 2005-08-24 | 住友金属工業株式会社 | ステンレス鋼用酸洗液 |
| TW452606B (en) * | 1997-12-05 | 2001-09-01 | Samsung Electronics Co Ltd | Method for cleaning inside of chamber using RF plasma |
| US5865901A (en) | 1997-12-29 | 1999-02-02 | Siemens Aktiengesellschaft | Wafer surface cleaning apparatus and method |
| US6182325B1 (en) * | 1998-03-10 | 2001-02-06 | Advanced Technology Materials, Inc. | Chamber cleaning mechanism |
| JPH11290805A (ja) | 1998-04-15 | 1999-10-26 | Tietech Co Ltd | メタルマスク洗浄装置 |
| US6419757B2 (en) | 1998-12-08 | 2002-07-16 | Bridgestone, Corporation | Method for cleaning sintered silicon carbide in wet condition |
| US6368410B1 (en) | 1999-06-28 | 2002-04-09 | General Electric Company | Semiconductor processing article |
| JP2001009394A (ja) | 1999-06-29 | 2001-01-16 | Bridgestone Corp | 炭化ケイ素焼結体の湿式洗浄方法 |
| US6586343B1 (en) | 1999-07-09 | 2003-07-01 | Applied Materials, Inc. | Method and apparatus for directing constituents through a processing chamber |
| US6352081B1 (en) | 1999-07-09 | 2002-03-05 | Applied Materials, Inc. | Method of cleaning a semiconductor device processing chamber after a copper etch process |
| DE19934090A1 (de) * | 1999-07-19 | 2001-02-08 | Cybio Instr Gmbh | Spülwannensystem |
| US6488037B1 (en) | 1999-08-31 | 2002-12-03 | Texas Instruments Incorporated | Programmable physical action during integrated circuit wafer cleanup |
| TW572980B (en) | 2000-01-12 | 2004-01-21 | Jsr Corp | Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing process |
| KR100733201B1 (ko) | 2000-02-07 | 2007-06-27 | 동경 엘렉트론 주식회사 | 반도체 제조장치용 석영 부재, 반도체 제조장치용 석영 부재의 제조방법, 열처리 장치, 및 석영 부재중의 금속의 분석 방법 |
| US6394023B1 (en) | 2000-03-27 | 2002-05-28 | Applied Materials, Inc. | Process kit parts and method for using same |
| US6506254B1 (en) | 2000-06-30 | 2003-01-14 | Lam Research Corporation | Semiconductor processing equipment having improved particle performance |
| US6569252B1 (en) | 2000-06-30 | 2003-05-27 | International Business Machines Corporation | Semi-aqueous solvent cleaning of paste processing residue from substrates |
| AU2001286453A1 (en) | 2000-08-11 | 2002-02-25 | Chem Trace Corporation | System and method for cleaning semiconductor fabrication equipment parts |
| AU2001288629A1 (en) | 2000-08-31 | 2002-03-13 | Chemtrace, Inc. | Cleaning of semiconductor process equipment chamber parts using organic solvents |
| JP2002307312A (ja) | 2001-04-11 | 2002-10-23 | Olympus Optical Co Ltd | 研磨加工装置、研磨加工方法、研磨加工をコンピュータに実行させる制御プログラムおよび記録媒体 |
| US6648982B1 (en) * | 2001-06-11 | 2003-11-18 | Quantum Global Technologies, Llc | Steam cleaning system and method for semiconductor process equipment |
| US7402286B2 (en) * | 2001-06-27 | 2008-07-22 | The Regents Of The University Of California | Capillary pins for high-efficiency microarray printing device |
| US6821350B2 (en) * | 2002-01-23 | 2004-11-23 | Applied Materials, Inc. | Cleaning process residues on a process chamber component |
| US6843858B2 (en) * | 2002-04-02 | 2005-01-18 | Applied Materials, Inc. | Method of cleaning a semiconductor processing chamber |
| KR100514167B1 (ko) | 2002-06-24 | 2005-09-09 | 삼성전자주식회사 | 세정액 및 이를 사용한 세라믹 부품의 세정 방법 |
| US7045072B2 (en) | 2003-07-24 | 2006-05-16 | Tan Samantha S H | Cleaning process and apparatus for silicate materials |
| US7091132B2 (en) | 2003-07-24 | 2006-08-15 | Applied Materials, Inc. | Ultrasonic assisted etch using corrosive liquids |
| US20050050708A1 (en) * | 2003-09-04 | 2005-03-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Embedded fastener apparatus and method for preventing particle contamination |
| US6983892B2 (en) * | 2004-02-05 | 2006-01-10 | Applied Materials, Inc. | Gas distribution showerhead for semiconductor processing |
| US20050189075A1 (en) * | 2004-02-27 | 2005-09-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Pre-clean chamber with wafer heating apparatus and method of use |
| KR20050120841A (ko) * | 2004-06-21 | 2005-12-26 | (주)리치스톤 | 미세 구멍 노즐의 진공 흡인 초음파 세정 방법과 그 장치 |
| KR101432161B1 (ko) | 2006-11-01 | 2014-08-20 | 퀀텀 글로벌 테크놀로지스, 엘엘씨 | 챔버 부품을 세정하기 위한 방법 및 장치 |
| US8097089B2 (en) | 2007-12-19 | 2012-01-17 | Quantum Global Technologies LLC | Methods for cleaning process kits and chambers, and for ruthenium recovery |
-
2007
- 2007-10-31 KR KR1020097011331A patent/KR101432161B1/ko not_active Expired - Fee Related
- 2007-10-31 WO PCT/US2007/022978 patent/WO2008057351A2/en not_active Ceased
- 2007-10-31 JP JP2009535302A patent/JP5156752B2/ja not_active Expired - Fee Related
- 2007-10-31 US US11/931,272 patent/US7789969B2/en active Active
- 2007-11-01 TW TW096141240A patent/TWI381888B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| US20080099054A1 (en) | 2008-05-01 |
| WO2008057351A3 (en) | 2008-10-16 |
| JP2010508145A (ja) | 2010-03-18 |
| KR101432161B1 (ko) | 2014-08-20 |
| KR20090091153A (ko) | 2009-08-26 |
| US7789969B2 (en) | 2010-09-07 |
| TWI381888B (zh) | 2013-01-11 |
| TW200833430A (en) | 2008-08-16 |
| WO2008057351A2 (en) | 2008-05-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5156752B2 (ja) | チャンバーコンポーネントを洗浄する方法及び装置 | |
| US6274500B1 (en) | Single wafer in-situ dry clean and seasoning for plasma etching process | |
| TWI312175B (OSRAM) | ||
| US5660682A (en) | Plasma clean with hydrogen gas | |
| JP5331888B2 (ja) | 化学物質の順次適用を使用した半導体基板の表面処理のための方法及び装置 | |
| EP1827871B1 (en) | Methods for removing black silicon and black silicon carbide from surfaces of silicon and silicon carbide electrodes for plasma processing apparatuses | |
| JP2002520835A (ja) | 処理装置用ガス分配プレート | |
| TWI501308B (zh) | 半導體晶圓的洗淨方法及半導體晶圓 | |
| TWI523703B (zh) | 由電漿腔室中所使用之上電極清除表面金屬污染物的方法 | |
| KR102534571B1 (ko) | 실리콘 함유 기판의 에칭 방법 | |
| CN113614891A (zh) | 干蚀刻方法及半导体装置的制造方法 | |
| KR101127778B1 (ko) | 구리 표면의 표면 환원, 패시베이션, 부식 방지 및 활성화 시스템과 방법 | |
| NL8601980A (nl) | Reinigingsmiddel voor het verwijderen van op hardware afgezette materialen, alsmede werkwijzen voor het reinigen van hardware en halfgeleiderplakken. | |
| JP3497846B2 (ja) | セラミックス部材の洗浄方法 | |
| JP5208658B2 (ja) | 半導体ウェハの洗浄方法、および、半導体ウェハ | |
| JP4325473B2 (ja) | 熱処理装置のクリーニング方法 | |
| JP2007207941A (ja) | 基板洗浄方法、基板洗浄装置、およびそれを用いた電子デバイスの製造方法 | |
| US12444578B2 (en) | Method for protecting apparatus from etching substances and method for forming oxide film | |
| CN1254440A (zh) | 硅晶片的腐蚀方法 | |
| KR100851455B1 (ko) | 챔버 조건에 대한 공정 민감도를 감소시키는 방법 | |
| TWI421919B (zh) | 藉由順序施加化學品以進行半導體基板之表面處理的方法與設備 | |
| JP5461810B2 (ja) | 半導体ウェハの洗浄方法 | |
| KR20060031469A (ko) | 반도체 제조 장치의 기판 처리조 | |
| JPH10214827A (ja) | ケイ素含有被膜の除去方法 | |
| KR20110079835A (ko) | 박리액 및 대상물 세정 방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101018 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20101018 |
|
| RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20101108 |
|
| RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20101209 |
|
| A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20120111 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120209 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20120509 |
|
| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20120516 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120608 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20121108 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20121210 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20151214 Year of fee payment: 3 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 5156752 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |