JP5154299B2 - 発光装置 - Google Patents

発光装置 Download PDF

Info

Publication number
JP5154299B2
JP5154299B2 JP2008127868A JP2008127868A JP5154299B2 JP 5154299 B2 JP5154299 B2 JP 5154299B2 JP 2008127868 A JP2008127868 A JP 2008127868A JP 2008127868 A JP2008127868 A JP 2008127868A JP 5154299 B2 JP5154299 B2 JP 5154299B2
Authority
JP
Japan
Prior art keywords
layer
light
transistor
emitting element
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008127868A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009003435A (ja
JP2009003435A5 (enExample
Inventor
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2008127868A priority Critical patent/JP5154299B2/ja
Publication of JP2009003435A publication Critical patent/JP2009003435A/ja
Publication of JP2009003435A5 publication Critical patent/JP2009003435A5/ja
Application granted granted Critical
Publication of JP5154299B2 publication Critical patent/JP5154299B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Control Of El Displays (AREA)
JP2008127868A 2007-05-18 2008-05-15 発光装置 Expired - Fee Related JP5154299B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008127868A JP5154299B2 (ja) 2007-05-18 2008-05-15 発光装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007132803 2007-05-18
JP2007132803 2007-05-18
JP2008127868A JP5154299B2 (ja) 2007-05-18 2008-05-15 発光装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012265980A Division JP5444445B2 (ja) 2007-05-18 2012-12-05 発光装置

Publications (3)

Publication Number Publication Date
JP2009003435A JP2009003435A (ja) 2009-01-08
JP2009003435A5 JP2009003435A5 (enExample) 2011-05-12
JP5154299B2 true JP5154299B2 (ja) 2013-02-27

Family

ID=40287880

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2008127868A Expired - Fee Related JP5154299B2 (ja) 2007-05-18 2008-05-15 発光装置
JP2012265980A Expired - Fee Related JP5444445B2 (ja) 2007-05-18 2012-12-05 発光装置
JP2013263187A Withdrawn JP2014123129A (ja) 2007-05-18 2013-12-20 発光装置

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2012265980A Expired - Fee Related JP5444445B2 (ja) 2007-05-18 2012-12-05 発光装置
JP2013263187A Withdrawn JP2014123129A (ja) 2007-05-18 2013-12-20 発光装置

Country Status (3)

Country Link
US (2) US8513678B2 (enExample)
JP (3) JP5154299B2 (enExample)
KR (1) KR101481737B1 (enExample)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7877895B2 (en) * 2006-06-26 2011-02-01 Tokyo Electron Limited Substrate processing apparatus
US8232598B2 (en) * 2007-09-20 2012-07-31 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US8148236B2 (en) 2007-11-30 2012-04-03 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing thereof
US8736587B2 (en) * 2008-07-10 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2011003522A (ja) * 2008-10-16 2011-01-06 Semiconductor Energy Lab Co Ltd フレキシブル発光装置、電子機器及びフレキシブル発光装置の作製方法
US20100224880A1 (en) * 2009-03-05 2010-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101613865B1 (ko) * 2009-03-26 2016-04-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 그 제작 방법
JP5581106B2 (ja) * 2009-04-27 2014-08-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101801538B1 (ko) * 2009-10-16 2017-11-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 논리 회로 및 반도체 장치
JP5740132B2 (ja) 2009-10-26 2015-06-24 株式会社半導体エネルギー研究所 表示装置及び半導体装置
KR102286284B1 (ko) * 2009-11-06 2021-08-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US9142804B2 (en) * 2010-02-09 2015-09-22 Samsung Display Co., Ltd. Organic light-emitting device including barrier layer and method of manufacturing the same
JP5969216B2 (ja) * 2011-02-11 2016-08-17 株式会社半導体エネルギー研究所 発光素子、表示装置、照明装置、及びこれらの作製方法
US8928010B2 (en) 2011-02-25 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Display device
CN105702873B (zh) * 2011-03-30 2017-11-24 株式会社半导体能源研究所 发光元件
KR101960759B1 (ko) 2011-04-08 2019-03-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치, 전자 기기, 및 조명 장치
JP2013178500A (ja) * 2012-02-02 2013-09-09 Semiconductor Energy Lab Co Ltd シリアルパラレル変換回路、表示装置、シリアルパラレル変換回路の駆動方法
US8946731B2 (en) 2012-09-24 2015-02-03 International Business Machines Corporation OLED display with spalled semiconductor driving circuitry and other integrated functions
KR102034071B1 (ko) * 2013-03-26 2019-10-18 엘지디스플레이 주식회사 폴리 실리콘 박막트랜지스터를 포함하는 유기발광 디스플레이 장치 및 이의 제조방법
JP6545976B2 (ja) 2014-03-07 2019-07-17 株式会社半導体エネルギー研究所 半導体装置
CN105185816A (zh) * 2015-10-15 2015-12-23 京东方科技集团股份有限公司 阵列基板及其制造方法、显示装置
US11600234B2 (en) 2015-10-15 2023-03-07 Ordos Yuansheng Optoelectronics Co., Ltd. Display substrate and driving method thereof
WO2021035415A1 (zh) 2019-08-23 2021-03-04 京东方科技集团股份有限公司 显示装置及其制备方法
WO2021035416A1 (zh) 2019-08-23 2021-03-04 京东方科技集团股份有限公司 显示装置及其制备方法
JP6917700B2 (ja) 2015-12-02 2021-08-11 株式会社半導体エネルギー研究所 半導体装置
US20180090720A1 (en) * 2016-09-27 2018-03-29 Universal Display Corporation Flexible OLED Display Module
US10319880B2 (en) * 2016-12-02 2019-06-11 Innolux Corporation Display device
KR102312349B1 (ko) 2017-06-30 2021-10-13 엘지디스플레이 주식회사 유기발광다이오드 표시장치
CN109817672B (zh) 2019-01-29 2020-12-29 京东方科技集团股份有限公司 有机电致发光显示基板及其制造方法、显示面板、装置
KR102944992B1 (ko) 2019-08-23 2026-03-30 보에 테크놀로지 그룹 컴퍼니 리미티드 표시장치, 이의 제조방법 및 구동기판
EP4020447B1 (en) 2019-08-23 2024-03-27 BOE Technology Group Co., Ltd. Pixel circuit and driving method therefor, and display substrate and driving method therefor, and display device
US12266303B2 (en) 2019-08-23 2025-04-01 Boe Technology Group Co., Ltd. Display device and manufacturing method thereof
US11569482B2 (en) 2019-08-23 2023-01-31 Beijing Boe Technology Development Co., Ltd. Display panel and manufacturing method thereof, display device
EP4020449B1 (en) 2019-08-23 2025-06-25 BOE Technology Group Co., Ltd. Display device and manufacturing method thereof
US11404451B2 (en) 2019-08-27 2022-08-02 Boe Technology Group Co., Ltd. Electronic device substrate, manufacturing method thereof, and electronic device
US20230080701A1 (en) * 2021-09-14 2023-03-16 Fujifilm Business Innovation Corp. Light emitting device and optical measurement apparatus

Family Cites Families (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US764598A (en) * 1903-12-07 1904-07-12 James S Dunston Manufacture of golf-balls.
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
JPH0766426A (ja) 1993-08-27 1995-03-10 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US5663077A (en) 1993-07-27 1997-09-02 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor in which the gate insulator comprises two oxide films
US5849108A (en) * 1996-04-26 1998-12-15 Canon Kabushiki Kaisha Photovoltaic element with zno layer having increasing fluorine content in layer thickness direction
US5994207A (en) 1997-05-12 1999-11-30 Silicon Genesis Corporation Controlled cleavage process using pressurized fluid
JP2000012864A (ja) 1998-06-22 2000-01-14 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP3385972B2 (ja) 1998-07-10 2003-03-10 信越半導体株式会社 貼り合わせウェーハの製造方法および貼り合わせウェーハ
US6271101B1 (en) 1998-07-29 2001-08-07 Semiconductor Energy Laboratory Co., Ltd. Process for production of SOI substrate and process for production of semiconductor device
JP4476390B2 (ja) 1998-09-04 2010-06-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2000124092A (ja) 1998-10-16 2000-04-28 Shin Etsu Handotai Co Ltd 水素イオン注入剥離法によってsoiウエーハを製造する方法およびこの方法で製造されたsoiウエーハ
KR20000040104A (ko) 1998-12-17 2000-07-05 김영환 실리콘 온 인슐레이터 웨이퍼의 제조방법
JP4136185B2 (ja) 1999-05-12 2008-08-20 パイオニア株式会社 有機エレクトロルミネッセンス多色ディスプレイ及びその製造方法
JP4452789B2 (ja) 1999-09-01 2010-04-21 独立行政法人 日本原子力研究開発機構 シリコン系結晶薄板の製造方法および光電変換素子用基板の製造方法
TW516244B (en) 1999-09-17 2003-01-01 Semiconductor Energy Lab EL display device and method for manufacturing the same
JP2001147659A (ja) 1999-11-18 2001-05-29 Sony Corp 表示装置
JP3687953B2 (ja) 2000-02-22 2005-08-24 東北パイオニア株式会社 有機エレクトロルミネセンス表示パネル及びその製造方法
US6879110B2 (en) 2000-07-27 2005-04-12 Semiconductor Energy Laboratory Co., Ltd. Method of driving display device
JP2002108285A (ja) 2000-07-27 2002-04-10 Semiconductor Energy Lab Co Ltd 表示装置の駆動方法
JP4507395B2 (ja) 2000-11-30 2010-07-21 セイコーエプソン株式会社 電気光学装置用素子基板の製造方法
US6583440B2 (en) 2000-11-30 2003-06-24 Seiko Epson Corporation Soi substrate, element substrate, semiconductor device, electro-optical apparatus, electronic equipment, method of manufacturing the soi substrate, method of manufacturing the element substrate, and method of manufacturing the electro-optical apparatus
JP4126912B2 (ja) 2001-06-22 2008-07-30 セイコーエプソン株式会社 電気光学装置及びその製造方法並びに電子機器
JP4653374B2 (ja) 2001-08-23 2011-03-16 セイコーエプソン株式会社 電気光学装置の製造方法
JP2003142665A (ja) 2001-08-23 2003-05-16 Seiko Epson Corp 半導体基板の製造方法、半導体基板、電気光学装置並びに電子機器
JP2003280587A (ja) 2002-01-18 2003-10-02 Semiconductor Energy Lab Co Ltd 表示装置およびそれを使用した表示モジュール、電子機器
US7224333B2 (en) 2002-01-18 2007-05-29 Semiconductor Energy Laboratory Co. Ltd. Display device and driving method thereof
US7119365B2 (en) 2002-03-26 2006-10-10 Sharp Kabushiki Kaisha Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate
JP4683825B2 (ja) 2002-04-24 2011-05-18 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US7786496B2 (en) 2002-04-24 2010-08-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing same
JP3884351B2 (ja) 2002-08-26 2007-02-21 株式会社 日立ディスプレイズ 画像表示装置およびその製造方法
US7176528B2 (en) 2003-02-18 2007-02-13 Corning Incorporated Glass-based SOI structures
JP2004303562A (ja) 2003-03-31 2004-10-28 Dainippon Printing Co Ltd 有機エレクトロルミネッセント素子用基板
US7229703B2 (en) 2003-03-31 2007-06-12 Dai Nippon Printing Co. Ltd. Gas barrier substrate
JP4754772B2 (ja) 2003-05-16 2011-08-24 株式会社半導体エネルギー研究所 発光装置及び該発光装置を用いた電子機器
TW200500979A (en) 2003-05-20 2005-01-01 Adv Lcd Tech Dev Ct Co Ltd Light emission type display apparatus
JP2005004183A (ja) 2003-05-20 2005-01-06 Advanced Lcd Technologies Development Center Co Ltd 発光型表示装置
JP4641710B2 (ja) 2003-06-18 2011-03-02 株式会社半導体エネルギー研究所 表示装置
JP4403399B2 (ja) * 2003-09-19 2010-01-27 ソニー株式会社 表示装置および表示装置の製造方法
TWI255669B (en) 2003-09-19 2006-05-21 Sony Corp Display device, manufacturing method thereof, organic light emitting device, and manufacturing method thereof
KR100529846B1 (ko) * 2003-12-26 2005-11-22 엘지.필립스 엘시디 주식회사 듀얼패널타입 유기전계발광 소자 및 그 제조방법
JP4439260B2 (ja) 2003-12-26 2010-03-24 三洋電機株式会社 表示装置の製造方法
JP4479250B2 (ja) 2004-01-21 2010-06-09 ソニー株式会社 表示装置の製造方法および表示装置
JP5110772B2 (ja) 2004-02-03 2012-12-26 株式会社半導体エネルギー研究所 半導体薄膜層を有する基板の製造方法
KR100656497B1 (ko) * 2004-02-09 2006-12-11 삼성에스디아이 주식회사 유기전계발광표시장치 및 그의 제조방법
JP2005310742A (ja) 2004-03-25 2005-11-04 Sanyo Electric Co Ltd 有機エレクトロルミネッセンス素子
JP4947909B2 (ja) * 2004-03-25 2012-06-06 三洋電機株式会社 有機エレクトロルミネッセンス素子
KR100611756B1 (ko) 2004-06-18 2006-08-10 삼성에스디아이 주식회사 유기 전계 발광 소자 및 그의 제조 방법
KR101249172B1 (ko) 2004-07-30 2013-03-29 산요덴키가부시키가이샤 유기 일렉트로루미네센스 소자
JP4578215B2 (ja) 2004-11-30 2010-11-10 三洋電機株式会社 有機エレクトロルミネッセント素子及び有機エレクトロルミネッセント表示装置
WO2006023594A2 (en) 2004-08-18 2006-03-02 Corning Incorporated High strain glass/glass-ceramic containing semiconductor-on-insulator structures
JP4823629B2 (ja) 2004-09-24 2011-11-24 株式会社半導体エネルギー研究所 発光装置
CN101027942B (zh) 2004-09-24 2010-06-16 株式会社半导体能源研究所 发光器件
US7247545B2 (en) 2004-11-10 2007-07-24 Sharp Laboratories Of America, Inc. Fabrication of a low defect germanium film by direct wafer bonding
DE602004013163T2 (de) 2004-11-19 2009-05-14 S.O.I. Tec Silicon On Insulator Technologies S.A. Verfahren zur Herstellung eines Germanium-On-Insulator-Wafers (GeOI)
EP1817764A4 (en) 2004-11-30 2009-08-26 Semiconductor Energy Lab DISPLAY DEVICE AND CONTROL METHOD, SEMICONDUCTOR EQUIPMENT AND ELECTRONIC DEVICE
JP4363319B2 (ja) 2004-12-14 2009-11-11 セイコーエプソン株式会社 電気光学装置及び電子機器
JP2006269670A (ja) 2005-03-23 2006-10-05 Fuji Photo Film Co Ltd 有機el素子及び有機elディスプレイ
JP5072243B2 (ja) * 2005-03-25 2012-11-14 株式会社半導体エネルギー研究所 発光装置
US7851989B2 (en) 2005-03-25 2010-12-14 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US8030643B2 (en) 2005-03-28 2011-10-04 Semiconductor Energy Laboratory Co., Ltd. Memory device and manufacturing method the same
TWI429327B (zh) 2005-06-30 2014-03-01 半導體能源研究所股份有限公司 半導體裝置、顯示裝置、及電子設備
US7898623B2 (en) * 2005-07-04 2011-03-01 Semiconductor Energy Laboratory Co., Ltd. Display device, electronic device and method of driving display device
FR2888663B1 (fr) 2005-07-13 2008-04-18 Soitec Silicon On Insulator Procede de diminution de la rugosite d'une couche epaisse d'isolant
EP3614442A3 (en) 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
EP1777689B1 (en) * 2005-10-18 2016-08-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device and electronic equipment each having the same
CN101577293B (zh) 2005-11-15 2012-09-19 株式会社半导体能源研究所 半导体器件及其制造方法
KR100698086B1 (ko) * 2005-12-29 2007-03-23 동부일렉트로닉스 주식회사 반도체소자의 제조방법
US7651896B2 (en) 2006-08-30 2010-01-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
FR2911430B1 (fr) 2007-01-15 2009-04-17 Soitec Silicon On Insulator "procede de fabrication d'un substrat hybride"
CN101281912B (zh) 2007-04-03 2013-01-23 株式会社半导体能源研究所 Soi衬底及其制造方法以及半导体装置

Also Published As

Publication number Publication date
JP2009003435A (ja) 2009-01-08
KR20080101732A (ko) 2008-11-21
US20090114926A1 (en) 2009-05-07
KR101481737B1 (ko) 2015-01-12
JP2014123129A (ja) 2014-07-03
JP2013101353A (ja) 2013-05-23
US20140034982A1 (en) 2014-02-06
US8513678B2 (en) 2013-08-20
US9431574B2 (en) 2016-08-30
JP5444445B2 (ja) 2014-03-19

Similar Documents

Publication Publication Date Title
JP5444445B2 (ja) 発光装置
US11889711B2 (en) Light-emitting element, light-emitting device, electronic device, and lighting device
KR102164991B1 (ko) 발광소자, 발광장치, 및 전자기기
JP4974941B2 (ja) 発光装置および電子機器
CN101803058B (zh) 发光元件、发光设备和电子设备
US9209415B2 (en) Light-emitting element with multiple light-emitting layers having controlled carrier mobility and lighting device and electronic device using the same
CN102117892B (zh) 发光元件、发光装置和电子装置
JP2018081939A (ja) 発光素子及び発光装置
TW201238082A (en) Light-emitting element, display device, lighting device, and method for manufacturing the same

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110330

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110330

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120725

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120731

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120913

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20121127

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20121205

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20151214

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 5154299

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20151214

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees