JP2009003435A5 - - Google Patents

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Publication number
JP2009003435A5
JP2009003435A5 JP2008127868A JP2008127868A JP2009003435A5 JP 2009003435 A5 JP2009003435 A5 JP 2009003435A5 JP 2008127868 A JP2008127868 A JP 2008127868A JP 2008127868 A JP2008127868 A JP 2008127868A JP 2009003435 A5 JP2009003435 A5 JP 2009003435A5
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Japan
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light
transistor
emitting device
single crystal
crystal semiconductor
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JP2008127868A
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JP2009003435A (ja
JP5154299B2 (ja
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Publication of JP2009003435A5 publication Critical patent/JP2009003435A5/ja
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Publication of JP5154299B2 publication Critical patent/JP5154299B2/ja
Expired - Fee Related legal-status Critical Current
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JP2008127868A 2007-05-18 2008-05-15 発光装置 Expired - Fee Related JP5154299B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008127868A JP5154299B2 (ja) 2007-05-18 2008-05-15 発光装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007132803 2007-05-18
JP2007132803 2007-05-18
JP2008127868A JP5154299B2 (ja) 2007-05-18 2008-05-15 発光装置

Related Child Applications (1)

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JP2012265980A Division JP5444445B2 (ja) 2007-05-18 2012-12-05 発光装置

Publications (3)

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JP2009003435A JP2009003435A (ja) 2009-01-08
JP2009003435A5 true JP2009003435A5 (enExample) 2011-05-12
JP5154299B2 JP5154299B2 (ja) 2013-02-27

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JP2008127868A Expired - Fee Related JP5154299B2 (ja) 2007-05-18 2008-05-15 発光装置
JP2012265980A Expired - Fee Related JP5444445B2 (ja) 2007-05-18 2012-12-05 発光装置
JP2013263187A Withdrawn JP2014123129A (ja) 2007-05-18 2013-12-20 発光装置

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JP2012265980A Expired - Fee Related JP5444445B2 (ja) 2007-05-18 2012-12-05 発光装置
JP2013263187A Withdrawn JP2014123129A (ja) 2007-05-18 2013-12-20 発光装置

Country Status (3)

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US (2) US8513678B2 (enExample)
JP (3) JP5154299B2 (enExample)
KR (1) KR101481737B1 (enExample)

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