JP5153828B2 - シリコン単結晶の引き上げ方法 - Google Patents
シリコン単結晶の引き上げ方法 Download PDFInfo
- Publication number
- JP5153828B2 JP5153828B2 JP2010119124A JP2010119124A JP5153828B2 JP 5153828 B2 JP5153828 B2 JP 5153828B2 JP 2010119124 A JP2010119124 A JP 2010119124A JP 2010119124 A JP2010119124 A JP 2010119124A JP 5153828 B2 JP5153828 B2 JP 5153828B2
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- single crystal
- pulling
- speed
- cone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000013078 crystal Substances 0.000 title claims description 89
- 238000000034 method Methods 0.000 title claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 7
- 229910052710 silicon Inorganic materials 0.000 title claims description 7
- 239000010703 silicon Substances 0.000 title claims description 7
- 239000000155 melt Substances 0.000 claims description 14
- 230000007704 transition Effects 0.000 claims description 3
- 230000003247 decreasing effect Effects 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 12
- 239000001301 oxygen Substances 0.000 description 12
- 229910052760 oxygen Inorganic materials 0.000 description 12
- 239000002019 doping agent Substances 0.000 description 4
- 230000004323 axial length Effects 0.000 description 3
- 238000005204 segregation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P80/00—Climate change mitigation technologies for sector-wide applications
- Y02P80/30—Reducing waste in manufacturing processes; Calculations of released waste quantities
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
前記種子結晶を前記融液から結晶引き上げ速度で引き上げることにより種子結晶に接する箇所で単結晶を結晶化させ、
前記単結晶の直径を円錐部の形で目標直径にまで拡大することを有する
坩堝中に含まれている融液からシリコン単結晶を引き上げる方法において、
前記円錐部において前記単結晶の成長フロントの湾曲の反転が生じるように前記結晶引き上げ速度を制御することを有する、単結晶の引き上げ方法により解決される。
Claims (5)
- 融液中に種子結晶を浸漬し、
前記種子結晶を前記融液から結晶引き上げ速度で引き上げることにより種子結晶に接する箇所で単結晶を結晶化させ、
前記単結晶の直径を円錐部の形で目標直径にまで拡大することを有する、
坩堝中に含まれている融液からシリコン単結晶を引き上げる方法において、
前記円錐部において、前記種子結晶に向かう方向に見て凹状に湾曲した成長フロントから凸状に湾曲した成長フロントに前記単結晶の成長フロントの湾曲の反転が生じるように前記結晶引き上げ速度を制御し、
前記結晶引き上げ速度を、最初の速度から、前記最初の速度より少なくとも40%低い結晶引き上げ速度に低下させ、前記低い結晶引き上げ速度から最終速度に上昇させ、前記目標直径が達成されるまで前記種子結晶を引き上げる、単結晶の引き上げ方法。 - 前記最終速度は、前記最初の速度よりも低いことを特徴とする、請求項1記載の方法。
- 前記種子結晶を、前記円錐部の直径が目標直径の少なくとも50%に達するときに初めて前記低い結晶引き上げ速度で引き上げることを特徴とする、請求項1又は2記載の方法。
- 60°以上で90°以下の開き角αが前記円錐部に付与されることを特徴とする、請求項1から3までのいずれか1項記載の方法。
- 円錐部から円柱部への移行部での前記外角βは、5°以上で25°以下であることを特徴とする、請求項1から4までのいずれか1項記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009024473.5A DE102009024473B4 (de) | 2009-06-10 | 2009-06-10 | Verfahren zum Ziehen eines Einkristalls aus Silizium und danach hergestellter Einkristall |
DE102009024473.5 | 2009-06-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010285342A JP2010285342A (ja) | 2010-12-24 |
JP5153828B2 true JP5153828B2 (ja) | 2013-02-27 |
Family
ID=43306614
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010119124A Active JP5153828B2 (ja) | 2009-06-10 | 2010-05-25 | シリコン単結晶の引き上げ方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8758506B2 (ja) |
JP (1) | JP5153828B2 (ja) |
KR (1) | KR101241523B1 (ja) |
CN (1) | CN101922041B (ja) |
DE (1) | DE102009024473B4 (ja) |
SG (1) | SG185993A1 (ja) |
TW (1) | TWI424103B (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5831436B2 (ja) * | 2012-12-11 | 2015-12-09 | 信越半導体株式会社 | シリコン単結晶の製造方法 |
CN107151817A (zh) * | 2016-03-03 | 2017-09-12 | 上海新昇半导体科技有限公司 | 单晶硅的生长方法及其制备的单晶硅锭 |
DE102017215332A1 (de) * | 2017-09-01 | 2019-03-07 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Einkristall aus Silizium mit <100>-Orientierung, der mit Dotierstoff vom n-Typ dotiert ist, und Verfahren zur Herstellung eines solchen Einkristalls |
DE102019210254A1 (de) * | 2019-07-11 | 2021-01-14 | Siltronic Ag | Verfahren zum Ziehen eines Einkristalls aus Silizium gemäß der Czochralski-Methode |
EP4008813A1 (de) * | 2020-12-04 | 2022-06-08 | Siltronic AG | Verfahren zum ziehen eines einkristalls nach der czochralski-methode |
CN115044967B (zh) * | 2022-06-28 | 2024-03-22 | 西安奕斯伟材料科技股份有限公司 | 单晶硅拉晶控制方法及装置、单晶硅拉晶炉 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62172000A (ja) * | 1986-01-24 | 1987-07-28 | Sharp Corp | 2−6族化合物の単結晶成長法 |
JPH0631200B2 (ja) * | 1986-06-07 | 1994-04-27 | 忠 塩嵜 | 単結晶の育成方法 |
JPS63206384A (ja) * | 1987-02-18 | 1988-08-25 | Sumitomo Electric Ind Ltd | 単結晶の育成装置 |
JPH0431384A (ja) * | 1990-05-28 | 1992-02-03 | Nippon Steel Corp | 単結晶引上げ装置 |
JPH0785489B2 (ja) | 1991-02-08 | 1995-09-13 | 信越半導体株式会社 | 単結晶の直径計測方法 |
JPH05208893A (ja) * | 1992-01-29 | 1993-08-20 | Komatsu Denshi Kinzoku Kk | 単結晶引上げ装置およびその制御方法 |
JP3438492B2 (ja) | 1996-10-18 | 2003-08-18 | 信越半導体株式会社 | 単結晶の引上げ方法 |
JP3557872B2 (ja) * | 1997-10-17 | 2004-08-25 | 三菱住友シリコン株式会社 | シリコン単結晶の育成装置 |
JPH11180793A (ja) * | 1997-12-18 | 1999-07-06 | Sumitomo Sitix Corp | 単結晶の引上速度制御方法 |
JP3598800B2 (ja) * | 1998-03-17 | 2004-12-08 | 三菱住友シリコン株式会社 | シリコン単結晶の引上げ方法 |
JP4052753B2 (ja) * | 1999-02-24 | 2008-02-27 | 株式会社スーパーシリコン研究所 | 単結晶成長装置及び単結晶成長方法 |
JP3783495B2 (ja) * | 1999-11-30 | 2006-06-07 | 株式会社Sumco | 高品質シリコン単結晶の製造方法 |
EP1252375B1 (en) | 2000-02-01 | 2003-09-17 | MEMC Electronic Materials, Inc. | Method for controlling growth of a silicon crystal to minimize growth rate and diameter deviations |
US6869477B2 (en) * | 2000-02-22 | 2005-03-22 | Memc Electronic Materials, Inc. | Controlled neck growth process for single crystal silicon |
DE10025870A1 (de) | 2000-05-25 | 2001-12-06 | Wacker Siltronic Halbleitermat | Einkristallstab und Verfahren zur Herstellung desselben |
JP2002137988A (ja) * | 2000-10-31 | 2002-05-14 | Super Silicon Kenkyusho:Kk | 単結晶引上げ方法 |
JP2003095788A (ja) * | 2001-09-18 | 2003-04-03 | Sumitomo Mitsubishi Silicon Corp | シリコン単結晶の引上げ方法 |
KR100588425B1 (ko) * | 2003-03-27 | 2006-06-12 | 실트로닉 아게 | 실리콘 단결정, 결정된 결함분포를 가진 실리콘 단결정 및 실리콘 반도체 웨이퍼의 제조방법 |
DE102005028202B4 (de) * | 2005-06-17 | 2010-04-15 | Siltronic Ag | Verfahren zur Herstellung von Halbleiterscheiben aus Silizium |
JP4760729B2 (ja) | 2006-02-21 | 2011-08-31 | 株式会社Sumco | Igbt用のシリコン単結晶ウェーハ及びigbt用のシリコン単結晶ウェーハの製造方法 |
KR100906284B1 (ko) * | 2007-11-02 | 2009-07-06 | 주식회사 실트론 | 산소농도 특성이 개선된 반도체 단결정의 제조방법 |
KR100977624B1 (ko) * | 2008-01-14 | 2010-08-23 | 주식회사 실트론 | 숄더부 형상이 제어된 실리콘 단결정 잉곳 및 그 제조방법 |
JP2009292659A (ja) * | 2008-06-03 | 2009-12-17 | Sumco Corp | シリコン単結晶育成における肩形成方法 |
-
2009
- 2009-06-10 DE DE102009024473.5A patent/DE102009024473B4/de active Active
-
2010
- 2010-03-16 US US12/724,590 patent/US8758506B2/en active Active
- 2010-03-25 SG SG2012083457A patent/SG185993A1/en unknown
- 2010-03-26 KR KR1020100027360A patent/KR101241523B1/ko active IP Right Grant
- 2010-03-29 CN CN2010101438320A patent/CN101922041B/zh active Active
- 2010-04-29 TW TW099113654A patent/TWI424103B/zh active
- 2010-05-25 JP JP2010119124A patent/JP5153828B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
KR101241523B1 (ko) | 2013-03-08 |
JP2010285342A (ja) | 2010-12-24 |
US8758506B2 (en) | 2014-06-24 |
CN101922041B (zh) | 2012-12-12 |
KR20100132901A (ko) | 2010-12-20 |
DE102009024473A1 (de) | 2011-08-18 |
CN101922041A (zh) | 2010-12-22 |
TWI424103B (zh) | 2014-01-21 |
US20100316551A1 (en) | 2010-12-16 |
TW201043739A (en) | 2010-12-16 |
SG185993A1 (en) | 2012-12-28 |
DE102009024473B4 (de) | 2015-11-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5153828B2 (ja) | シリコン単結晶の引き上げ方法 | |
JP4179331B2 (ja) | SiC単結晶の製造方法 | |
JP5491483B2 (ja) | β−Ga2O3系単結晶の成長方法 | |
JP5904079B2 (ja) | シリコン単結晶育成装置及びシリコン単結晶育成方法 | |
JP2006312576A (ja) | シリコン単結晶の製造方法およびシリコンウェーハ | |
JP5574645B2 (ja) | 単結晶シリコンの製造方法 | |
CN103392223A (zh) | 硅基板的制造方法及硅基板 | |
JPH0255400B2 (ja) | ||
US20030029375A1 (en) | Silicon single crystal wafer fabricating method and silicon single crystal wafer | |
JP4710603B2 (ja) | アニールウエーハとその製造方法 | |
JP4894848B2 (ja) | シリコン単結晶の製造方法 | |
JP2009292663A (ja) | シリコン単結晶の育成方法 | |
JP2009018984A (ja) | 低酸素濃度シリコン単結晶およびその製造方法 | |
US20180030615A1 (en) | Methods for producing single crystal silicon ingots with reduced seed end oxygen | |
JP4650345B2 (ja) | シリコン単結晶の製造方法 | |
US20030154906A1 (en) | Process for producing a highly doped silicon single crystal | |
JP2005281068A (ja) | シリコン種結晶およびシリコン単結晶の製造方法 | |
JP2006040972A (ja) | シリコンエピタキシャルウェーハおよびその製造方法 | |
JP5605913B2 (ja) | 単結晶引上方法 | |
JP2010275137A (ja) | シリコン単結晶の製造方法 | |
US20070163487A1 (en) | A method for producing a single crystal and an apparatus for producing a single crystal | |
JP2009292654A (ja) | シリコン単結晶引上げ方法 | |
WO2021162046A1 (ja) | シリコン単結晶の製造方法 | |
JP5777756B2 (ja) | β−Ga2O3系単結晶基板 | |
WO2018216364A1 (ja) | シリコン単結晶の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20101227 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20101228 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20111024 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20111116 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20111116 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120711 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120717 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121016 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20121106 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20121204 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20151214 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5153828 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |