JP5153058B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5153058B2
JP5153058B2 JP2005051883A JP2005051883A JP5153058B2 JP 5153058 B2 JP5153058 B2 JP 5153058B2 JP 2005051883 A JP2005051883 A JP 2005051883A JP 2005051883 A JP2005051883 A JP 2005051883A JP 5153058 B2 JP5153058 B2 JP 5153058B2
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Prior art keywords
layer
thin film
substrate
circuit portion
film circuit
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JP2005051883A
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Japanese (ja)
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JP2006237402A (ja
JP2006237402A5 (enrdf_load_stackoverflow
Inventor
恭介 伊藤
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2005051883A priority Critical patent/JP5153058B2/ja
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Publication of JP2006237402A5 publication Critical patent/JP2006237402A5/ja
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  • Electroluminescent Light Sources (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
JP2005051883A 2005-02-25 2005-02-25 半導体装置の作製方法 Expired - Fee Related JP5153058B2 (ja)

Priority Applications (1)

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JP2005051883A JP5153058B2 (ja) 2005-02-25 2005-02-25 半導体装置の作製方法

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Application Number Priority Date Filing Date Title
JP2005051883A JP5153058B2 (ja) 2005-02-25 2005-02-25 半導体装置の作製方法

Publications (3)

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JP2006237402A JP2006237402A (ja) 2006-09-07
JP2006237402A5 JP2006237402A5 (enrdf_load_stackoverflow) 2008-04-10
JP5153058B2 true JP5153058B2 (ja) 2013-02-27

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JP2005051883A Expired - Fee Related JP5153058B2 (ja) 2005-02-25 2005-02-25 半導体装置の作製方法

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008109116A (ja) * 2006-09-26 2008-05-08 Dainippon Printing Co Ltd 有機半導体素子、有機半導体素子の製造方法、有機トランジスタアレイ、およびディスプレイ
TWI570900B (zh) * 2006-09-29 2017-02-11 半導體能源研究所股份有限公司 半導體裝置的製造方法
KR101169395B1 (ko) * 2006-10-13 2012-07-30 삼성전자주식회사 상변화층의 표면처리공정을 포함하는 상변화 메모리 소자의제조방법
GB201112548D0 (en) * 2011-07-21 2011-08-31 Cambridge Display Tech Ltd Method of forming a top-gate transistor
CN114505208B (zh) * 2022-04-19 2022-06-14 成都泰美克晶体技术有限公司 一种晶片用上蜡机

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3900068B2 (ja) * 1996-09-19 2007-04-04 セイコーエプソン株式会社 発光素子の製造方法
JP3738799B2 (ja) * 1996-11-22 2006-01-25 セイコーエプソン株式会社 アクティブマトリクス基板の製造方法，アクティブマトリクス基板および液晶表示装置
JP4090743B2 (ja) * 2001-01-18 2008-05-28 株式会社半導体エネルギー研究所 発光装置の作製方法
JP4054850B2 (ja) * 2002-02-15 2008-03-05 株式会社ブイ・テクノロジー 有機エレクトロルミネッセンス露光装置の製造方法
JP4314557B2 (ja) * 2002-09-12 2009-08-19 セイコーエプソン株式会社 成膜方法、光学素子、半導体素子および電子機器、電気光学装置の製造方法、カラーフィルターの製造方法
JP4151420B2 (ja) * 2003-01-23 2008-09-17 セイコーエプソン株式会社 デバイスの製造方法
JP2004273367A (ja) * 2003-03-11 2004-09-30 Seiko Epson Corp 導電性パターンの製造方法、電気光学装置及び電子機器
JP4588341B2 (ja) * 2003-03-24 2010-12-01 株式会社半導体エネルギー研究所 Ｉｃカード
JP2005013985A (ja) * 2003-05-30 2005-01-20 Seiko Epson Corp 膜パターン形成方法、デバイス及びその製造方法、電気光学装置、並びに電子機器、アクティブマトリクス基板の製造方法、アクティブマトリクス基板
JP2004363049A (ja) * 2003-06-06 2004-12-24 Seiko Epson Corp 有機エレクトロルミネッセンス表示装置の製造方法及び、有機エレクトロルミネッセンス表示装置並びに、有機エレクトロルミネッセンス表示装置を備える表示装置

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JP2006237402A (ja) 2006-09-07

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