JP5150690B2 - 半導体装置及び半導体装置の製造方法 - Google Patents
半導体装置及び半導体装置の製造方法 Download PDFInfo
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- JP5150690B2 JP5150690B2 JP2010208131A JP2010208131A JP5150690B2 JP 5150690 B2 JP5150690 B2 JP 5150690B2 JP 2010208131 A JP2010208131 A JP 2010208131A JP 2010208131 A JP2010208131 A JP 2010208131A JP 5150690 B2 JP5150690 B2 JP 5150690B2
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 86
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 84
- 229910052751 metal Inorganic materials 0.000 claims abstract description 57
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- 230000003197 catalytic effect Effects 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims description 30
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- 239000010949 copper Substances 0.000 claims description 13
- 239000003054 catalyst Substances 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 150000002484 inorganic compounds Chemical class 0.000 claims description 2
- 229910010272 inorganic material Inorganic materials 0.000 claims description 2
- 150000002894 organic compounds Chemical class 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 2
- 239000010408 film Substances 0.000 description 185
- 239000010410 layer Substances 0.000 description 27
- 238000000034 method Methods 0.000 description 25
- 230000004888 barrier function Effects 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002074 nanoribbon Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1606—Graphene
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02491—Conductive materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02527—Carbon, e.g. diamond-like carbon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66015—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
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- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
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- Crystallography & Structural Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
第1の実施形態について、以下、図面を用いて説明する。
第2の実施形態では、さらに、調整膜250と絶縁膜260と間にバリアメタル膜を形成する場合について説明する。
Claims (7)
- 基板上に形成された触媒金属膜と、
前記触媒金属膜上に形成されたグラフェン膜と、
前記グラフェン膜と接続するコンタクトプラグと、
前記グラフェン膜表面のうち、前記コンタクトプラグと接続する領域以外の領域上に形成された、ディラック点位置をフェルミ準位に対して前記コンタクトプラグと接続する領域と同方向に調整する調整膜と、
を備え、
前記グラフェン膜表面のうち前記コンタクトプラグと接続する領域におけるディラック点位置と、残りの前記調整膜と接続する領域におけるディラック点位置との差が、±0.5eV以下になることを特徴とする半導体装置。 - 前記グラフェン膜表面のうち前記調整膜と接続する領域におけるエネルギーバンド構造が、ディラック点を含むエネルギー軸および波数方向の直線に対して線対称になることを特徴とする請求項1記載の半導体装置。
- 前記調整膜の材料として、金属と、有機化合物と、無機化合物とのいずれかが用いられることを特徴とする請求項1又は2記載の半導体装置。
- 前記コンタクトプラグの材料として、銀(Ag)と、アルミニウム(Al)と、金(Au)と、コバルト(Co)と、クロム(Cr)と、銅(Cu)と、鉄(Fe)と、ニッケル(Ni)と、タンタル(Ta)と、チタン(Ti)、タングステン(W)と、バナジウム(V)との少なくとも1つ、又は前記少なくとも1つが含まれた合金が用いられることを特徴とする請求項1〜3いずれか記載の半導体装置。
- 前記触媒金属膜の材料として、コバルト(Co)と、ニッケル(Ni)と、鉄(Fe)と、銅(Cu)と、ルテニウム(Ru)と、白金(Pt)との少なくとも1つ、又は前記少なくとも1つが含まれた合金が用いられることを特徴とする請求項1〜4いずれか記載の半導体装置。
- 前記グラフェン膜は、1〜20層の層数で形成されることを特徴とする請求項1〜5いずれか記載の半導体装置。
- 基板上に触媒金属膜を形成する工程と、
前記触媒金属膜上にグラフェン膜を形成する工程と、
前記グラフェン膜と接続するコンタクトプラグを形成する工程と、
前記コンタクトプラグを形成する前に、前記グラフェン膜表面のうち、前記コンタクトプラグと接続する領域以外の領域上に、ディラック点位置をフェルミ準位に対して前記コンタクトプラグと接続する領域と同方向に調整する調整膜を形成する工程と、
を備え、
前記グラフェン膜表面のうち前記コンタクトプラグと接続する領域におけるディラック点位置と、残りの前記調整膜と接続する領域におけるディラック点位置との差が、±0.5eV以下になることを特徴とする半導体装置の製造方法。
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JP2010208131A JP5150690B2 (ja) | 2010-09-16 | 2010-09-16 | 半導体装置及び半導体装置の製造方法 |
US13/075,591 US8378335B2 (en) | 2010-09-16 | 2011-03-30 | Semiconductor device and method for fabricating the same |
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JP2010208131A JP5150690B2 (ja) | 2010-09-16 | 2010-09-16 | 半導体装置及び半導体装置の製造方法 |
Publications (2)
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JP2012064784A JP2012064784A (ja) | 2012-03-29 |
JP5150690B2 true JP5150690B2 (ja) | 2013-02-20 |
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JP2012199520A (ja) * | 2011-03-10 | 2012-10-18 | Toshiba Corp | 半導体装置およびその製造方法 |
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JP2014051413A (ja) * | 2012-09-07 | 2014-03-20 | National Institute Of Advanced Industrial & Technology | グラフェン−cnt構造及びその製造方法 |
JP5851369B2 (ja) | 2012-09-10 | 2016-02-03 | 株式会社東芝 | 半導体装置の製造方法 |
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JP5583236B1 (ja) * | 2013-03-19 | 2014-09-03 | 株式会社東芝 | グラフェン配線 |
JP5583237B1 (ja) * | 2013-03-19 | 2014-09-03 | 株式会社東芝 | グラフェン配線とその製造方法 |
US9656769B2 (en) * | 2013-05-01 | 2017-05-23 | Mohammad A. Mazed | Heat shield for a spacecraft |
KR101484770B1 (ko) * | 2013-06-27 | 2015-01-21 | 재단법인 나노기반소프트일렉트로닉스연구단 | 커버부재를 이용한 그래핀의 제조방법 및 그를 포함하는 전자소자의 제조방법 |
JP2015138901A (ja) | 2014-01-23 | 2015-07-30 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP6178267B2 (ja) * | 2014-03-13 | 2017-08-09 | 株式会社東芝 | 配線 |
JP6180977B2 (ja) * | 2014-03-20 | 2017-08-16 | 株式会社東芝 | グラフェン配線及び半導体装置 |
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JP5395542B2 (ja) | 2009-07-13 | 2014-01-22 | 株式会社東芝 | 半導体装置 |
KR101636442B1 (ko) * | 2009-11-10 | 2016-07-21 | 삼성전자주식회사 | 촉매합금을 이용한 그라핀의 제조방법 |
JP5242643B2 (ja) * | 2010-08-31 | 2013-07-24 | 株式会社東芝 | 半導体装置 |
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2010
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US20120068160A1 (en) | 2012-03-22 |
JP2012064784A (ja) | 2012-03-29 |
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