JP6178267B2 - 配線 - Google Patents
配線 Download PDFInfo
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- JP6178267B2 JP6178267B2 JP2014049654A JP2014049654A JP6178267B2 JP 6178267 B2 JP6178267 B2 JP 6178267B2 JP 2014049654 A JP2014049654 A JP 2014049654A JP 2014049654 A JP2014049654 A JP 2014049654A JP 6178267 B2 JP6178267 B2 JP 6178267B2
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- JP
- Japan
- Prior art keywords
- graphene
- membered ring
- wiring
- unit cell
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/04—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon or silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53276—Conductive materials containing carbon, e.g. fullerenes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
Description
実施形態1の配線は、グラフェン1中に5−7員環列で構成されたグラフェンのユニットセルAを複数有する。図1に実施形態1の配線の斜視模式図を示す。図1に示す配線は、グラフェン1中に、複数のユニットセルAを有する。複数のユニットセルAが密集した領域を5−7員環列密集領域Bとする。実施形態の配線は、例えば、半導体装置内の配線に用いられる。グラフェン1(配線)の幅をWとし、長さ(配線方向距離)をLとする。
実施形態2の配線は、実施形態1のグラフェン1の代わりに多結晶グラフェン4を用いた形態である。グラフェンの結晶性以外に関して、実施形態1と実施形態2は、共通する。実施形態1と実施形態2の共通する内容についての説明および図中の一部の符号を省略する。図4に実施形態2の配線の斜視模式図である。図4の配線は、粒界5を有する多結晶グラフェン4に、複数のユニットセルAを有する。複数のユニットセルAが密集した領域を5−7員環列密集領域Bとする。多結晶のグラフェン4そのものは、その粒界5によって単結晶のグラフェン1と比較して電気伝導度が低いという短所を有する。しかし、多結晶のグラフェン4において、複数のユニットセルAが密集した領域である5−7員環列密集領域Bを有すると、ユニットセルAが導電パスDとなる。多結晶グラフェン4であっても、ユニットセルAの領域は、粒界5による電気伝導度の低下の影響が無いもしくは少ないため、低抵抗な導電パスDが多結晶グラフェン4に存在することで、より低抵抗な配線を得ることができる。実施形態2の配線は、多結晶グラフェン4であっても、導電パスDが粒界5を跨がないもしくは粒界5をほとんど跨がない配線とすることができる。多結晶グラフェン4は、例えば、触媒金属を用いた化学気相成長法等によって、形成することができる。実施形態の配線は、グラフェンが単結晶と多結晶のどちらでも、低抵抗な導電パスDを有するという利点を有する。
Claims (7)
- 5−7員環列で構成されたユニットセルをグラフェン面内に複数有する5−7員環列密集領域が複数含まれるグラフェンの配線であって、
前記5−7員環列密集領域の前記ユニットセルの長さは1nm以上であり、最隣接するユニットセル間の最短距離は5nm以下であり、
複数の前記5−7員環列密集領域は前記グラフェンの配線の長手方向に沿って存在する配線。 - 前記ユニットセルは、5−5員環列と7−7員環列とをさらに有する請求項1に記載の配線。
- 前記グラフェンの幅は、100nm以下であり、
前記グラフェンは、リボン状である請求項1又は2に記載の配線。 - 前記グラフェンが前記5−7員環列密集領域に起因する状態密度ピークがディラックポイントを基準として±1.5eV範囲内に持つ請求項1乃至3のいずれか1項に記載の配線。
- 前記グラフェンのフェルミレベルが、ドーピングによりディラックポイントを基準として±1.5eVの範囲内にある請求項1乃至4のいずれか1項に記載の配線。
- 前記グラフェンは、単結晶または粒界を有する多結晶である請求項1乃至5のいずれか1項に記載の配線。
- 前記グラフェンは、単層又は100層以下の多層グラフェンである請求項1乃至6のいずれか1項に記載の配線。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014049654A JP6178267B2 (ja) | 2014-03-13 | 2014-03-13 | 配線 |
EP15154692.6A EP2930143A1 (en) | 2014-03-13 | 2015-02-11 | Wiring |
US14/628,607 US20150259210A1 (en) | 2014-03-13 | 2015-02-23 | Wiring |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014049654A JP6178267B2 (ja) | 2014-03-13 | 2014-03-13 | 配線 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015176876A JP2015176876A (ja) | 2015-10-05 |
JP6178267B2 true JP6178267B2 (ja) | 2017-08-09 |
Family
ID=52462869
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014049654A Expired - Fee Related JP6178267B2 (ja) | 2014-03-13 | 2014-03-13 | 配線 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20150259210A1 (ja) |
EP (1) | EP2930143A1 (ja) |
JP (1) | JP6178267B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7002850B2 (ja) * | 2017-03-22 | 2022-02-04 | 株式会社東芝 | グラフェン配線構造の作製方法、配線構造の作製方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6538262B1 (en) * | 1996-02-02 | 2003-03-25 | The Regents Of The University Of California | Nanotube junctions |
JP3447492B2 (ja) * | 1996-11-12 | 2003-09-16 | 日本電気株式会社 | 炭素材料とその製造方法 |
JP4232418B2 (ja) * | 2002-09-10 | 2009-03-04 | 日本電気株式会社 | 反応性グラファイト状層状物質の製造方法 |
US8709881B2 (en) * | 2010-04-30 | 2014-04-29 | The Regents Of The University Of California | Direct chemical vapor deposition of graphene on dielectric surfaces |
WO2011139236A1 (en) * | 2010-05-05 | 2011-11-10 | National University Of Singapore | Hole doping of graphene |
JP5150690B2 (ja) * | 2010-09-16 | 2013-02-20 | 株式会社東芝 | 半導体装置及び半導体装置の製造方法 |
US8900538B2 (en) * | 2011-07-31 | 2014-12-02 | International Business Machines Corporation | Doped, passivated graphene nanomesh, method of making the doped, passivated graphene nanomesh, and semiconductor device including the doped, passivated graphene nanomesh |
KR101307982B1 (ko) * | 2011-11-25 | 2013-09-13 | 주식회사 삼천리 | 그래핀 표면을 갖는 금속선의 제조방법 |
JP5655161B2 (ja) * | 2011-12-09 | 2015-01-14 | パナソニック株式会社 | 硝酸還元方法、硝酸還元触媒、硝酸還元電極、燃料電池、及び水処理装置 |
KR101920714B1 (ko) * | 2012-05-16 | 2018-11-21 | 삼성전자주식회사 | 리튬 전지용 음극 및 이를 포함하는 리튬 전지 |
-
2014
- 2014-03-13 JP JP2014049654A patent/JP6178267B2/ja not_active Expired - Fee Related
-
2015
- 2015-02-11 EP EP15154692.6A patent/EP2930143A1/en not_active Withdrawn
- 2015-02-23 US US14/628,607 patent/US20150259210A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JP2015176876A (ja) | 2015-10-05 |
EP2930143A1 (en) | 2015-10-14 |
US20150259210A1 (en) | 2015-09-17 |
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