JP5149093B2 - ＧａＮ基板及びその製造方法、並びに窒化物半導体素子及びその製造方法 - Google Patents
ＧａＮ基板及びその製造方法、並びに窒化物半導体素子及びその製造方法 Download PDFInfo
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- JP5149093B2 JP5149093B2 JP2008187784A JP2008187784A JP5149093B2 JP 5149093 B2 JP5149093 B2 JP 5149093B2 JP 2008187784 A JP2008187784 A JP 2008187784A JP 2008187784 A JP2008187784 A JP 2008187784A JP 5149093 B2 JP5149093 B2 JP 5149093B2
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- nitride semiconductor
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- 239000004065 semiconductor Substances 0.000 title claims description 94
- 150000004767 nitrides Chemical class 0.000 title claims description 86
- 238000004519 manufacturing process Methods 0.000 title claims description 47
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title description 134
- 239000000758 substrate Substances 0.000 claims description 175
- 230000007547 defect Effects 0.000 claims description 98
- 238000000034 method Methods 0.000 claims description 33
- 238000005253 cladding Methods 0.000 claims description 29
- 239000002019 doping agent Substances 0.000 claims description 11
- 238000005498 polishing Methods 0.000 claims 2
- 229910002601 GaN Inorganic materials 0.000 description 57
- 239000007789 gas Substances 0.000 description 30
- 229910002704 AlGaN Inorganic materials 0.000 description 23
- 239000013078 crystal Substances 0.000 description 20
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 18
- 239000000356 contaminant Substances 0.000 description 13
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 12
- 239000010409 thin film Substances 0.000 description 10
- 239000011777 magnesium Substances 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000001771 impaired effect Effects 0.000 description 4
- 238000011144 upstream manufacturing Methods 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000001947 vapour-phase growth Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- Chemical Vapour Deposition (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008187784A JP5149093B2 (ja) | 2003-06-26 | 2008-07-18 | ＧａＮ基板及びその製造方法、並びに窒化物半導体素子及びその製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003183173 | 2003-06-26 | ||
| JP2003183173 | 2003-06-26 | ||
| JP2008187784A JP5149093B2 (ja) | 2003-06-26 | 2008-07-18 | ＧａＮ基板及びその製造方法、並びに窒化物半導体素子及びその製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004173059A Division JP4229005B2 (ja) | 2003-06-26 | 2004-06-10 | ＧａＮ基板及びその製造方法、並びに窒化物半導体素子 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012062624A Division JP2012129554A (ja) | 2003-06-26 | 2012-03-19 | ＧａＮ基板及びその製造方法、並びに窒化物半導体素子及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009004798A JP2009004798A (ja) | 2009-01-08 |
| JP5149093B2 true JP5149093B2 (ja) | 2013-02-20 |
Family
ID=40320760
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008187784A Expired - Fee Related JP5149093B2 (ja) | 2003-06-26 | 2008-07-18 | ＧａＮ基板及びその製造方法、並びに窒化物半導体素子及びその製造方法 |
| JP2012062624A Pending JP2012129554A (ja) | 2003-06-26 | 2012-03-19 | ＧａＮ基板及びその製造方法、並びに窒化物半導体素子及びその製造方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012062624A Pending JP2012129554A (ja) | 2003-06-26 | 2012-03-19 | ＧａＮ基板及びその製造方法、並びに窒化物半導体素子及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (2) | JP5149093B2 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5267262B2 (ja) * | 2009-03-25 | 2013-08-21 | 豊田合成株式会社 | 化合物半導体の製造方法、化合物半導体発光素子の製造方法、化合物半導体製造装置 |
| KR102062381B1 (ko) * | 2012-11-30 | 2020-01-03 | 서울바이오시스 주식회사 | 질화물 반도체층 성장 방법 및 질화물 반도체 소자 제조 방법 |
| JP6285305B2 (ja) * | 2014-07-22 | 2018-02-28 | 住友化学株式会社 | 半導体製造装置及び半導体の製造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003163420A (ja) * | 2000-03-17 | 2003-06-06 | Nec Corp | 窒化物半導体素子およびその製造方法 |
| JP2001326425A (ja) * | 2000-05-12 | 2001-11-22 | Fuji Photo Film Co Ltd | 半導体素子用基板の製造方法および半導体素子 |
| JP4889142B2 (ja) * | 2000-10-17 | 2012-03-07 | 三洋電機株式会社 | 窒化物系半導体レーザ素子 |
| JP4948720B2 (ja) * | 2001-08-29 | 2012-06-06 | シャープ株式会社 | 窒素化合物半導体積層物、発光素子、光ピックアップシステム、および窒素化合物半導体積層物の製造方法。 |
| JP2003086903A (ja) * | 2001-09-07 | 2003-03-20 | Sony Corp | 半導体発光素子およびその製造方法 |
| JP2004152841A (ja) * | 2002-10-29 | 2004-05-27 | Matsushita Electric Ind Co Ltd | 窒化物半導体レーザ素子 |
| JP3951973B2 (ja) * | 2003-06-27 | 2007-08-01 | 日亜化学工業株式会社 | 窒化物半導体素子 |
-
2008
- 2008-07-18 JP JP2008187784A patent/JP5149093B2/ja not_active Expired - Fee Related
-
2012
- 2012-03-19 JP JP2012062624A patent/JP2012129554A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2012129554A (ja) | 2012-07-05 |
| JP2009004798A (ja) | 2009-01-08 |
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