JP5145688B2 - Ｍｅｍｓ・半導体複合回路の製造方法 - Google Patents
Ｍｅｍｓ・半導体複合回路の製造方法 Download PDFInfo
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- JP5145688B2 JP5145688B2 JP2006292189A JP2006292189A JP5145688B2 JP 5145688 B2 JP5145688 B2 JP 5145688B2 JP 2006292189 A JP2006292189 A JP 2006292189A JP 2006292189 A JP2006292189 A JP 2006292189A JP 5145688 B2 JP5145688 B2 JP 5145688B2
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- semiconductor
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- mems
- mems structure
- insulating film
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- 239000004065 semiconductor Substances 0.000 title claims description 130
- 238000004519 manufacturing process Methods 0.000 title claims description 42
- 239000002131 composite material Substances 0.000 title claims description 21
- 238000000034 method Methods 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 35
- 230000015572 biosynthetic process Effects 0.000 claims description 21
- 239000012535 impurity Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 229910021332 silicide Inorganic materials 0.000 claims description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 154
- 230000008569 process Effects 0.000 description 26
- 230000003647 oxidation Effects 0.000 description 17
- 238000007254 oxidation reaction Methods 0.000 description 17
- 239000011229 interlayer Substances 0.000 description 16
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 239000000470 constituent Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- -1 as a second stage Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006292189A JP5145688B2 (ja) | 2006-10-27 | 2006-10-27 | Ｍｅｍｓ・半導体複合回路の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006292189A JP5145688B2 (ja) | 2006-10-27 | 2006-10-27 | Ｍｅｍｓ・半導体複合回路の製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008253517A Division JP5332463B2 (ja) | 2008-09-30 | 2008-09-30 | Ｍｅｍｓ・半導体複合素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008105157A JP2008105157A (ja) | 2008-05-08 |
| JP2008105157A5 JP2008105157A5 (enrdf_load_stackoverflow) | 2009-12-10 |
| JP5145688B2 true JP5145688B2 (ja) | 2013-02-20 |
Family
ID=39438946
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006292189A Expired - Fee Related JP5145688B2 (ja) | 2006-10-27 | 2006-10-27 | Ｍｅｍｓ・半導体複合回路の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5145688B2 (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2609913C2 (ru) * | 2011-10-24 | 2017-02-07 | Тейдзин Лимитед | Окрашенное в процессе прядения чисто ароматическое полиамидное волокно мета-типа |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010030020A (ja) * | 2008-07-31 | 2010-02-12 | Seiko Epson Corp | 電子装置 |
| CN104891425A (zh) * | 2015-06-12 | 2015-09-09 | 武汉飞恩微电子有限公司 | 基于石墨烯的流量传感器芯片及其制备方法 |
| CN111170266B (zh) * | 2019-12-31 | 2023-07-21 | 杭州士兰集成电路有限公司 | 半导体器件及其制造方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07163158A (ja) * | 1993-11-30 | 1995-06-23 | Sony Corp | マイクロマシンの製造方法 |
| JP2766174B2 (ja) * | 1993-12-28 | 1998-06-18 | 日本電気株式会社 | 電界放出冷陰極とこれを用いた電子管 |
| JP3603347B2 (ja) * | 1994-10-12 | 2004-12-22 | 株式会社デンソー | 半導体センサの製造方法 |
| JP3450758B2 (ja) * | 1999-09-29 | 2003-09-29 | 株式会社東芝 | 電界効果トランジスタの製造方法 |
| JP2001264677A (ja) * | 2000-03-15 | 2001-09-26 | Olympus Optical Co Ltd | 走査ミラー |
| JP4772302B2 (ja) * | 2003-09-29 | 2011-09-14 | パナソニック株式会社 | 微小電気機械システムおよびその製造方法 |
| JP2006255856A (ja) * | 2005-03-18 | 2006-09-28 | Seiko Epson Corp | 電気機械素子の製造方法 |
| JP4558655B2 (ja) * | 2006-01-25 | 2010-10-06 | 株式会社デンソー | 半導体力学量センサ |
-
2006
- 2006-10-27 JP JP2006292189A patent/JP5145688B2/ja not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2609913C2 (ru) * | 2011-10-24 | 2017-02-07 | Тейдзин Лимитед | Окрашенное в процессе прядения чисто ароматическое полиамидное волокно мета-типа |
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| Publication number | Publication date |
|---|---|
| JP2008105157A (ja) | 2008-05-08 |
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