JP5143769B2 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
- Publication number
- JP5143769B2 JP5143769B2 JP2009041598A JP2009041598A JP5143769B2 JP 5143769 B2 JP5143769 B2 JP 5143769B2 JP 2009041598 A JP2009041598 A JP 2009041598A JP 2009041598 A JP2009041598 A JP 2009041598A JP 5143769 B2 JP5143769 B2 JP 5143769B2
- Authority
- JP
- Japan
- Prior art keywords
- manufacturing
- conductive member
- semiconductor device
- gas
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 70
- 239000004065 semiconductor Substances 0.000 title claims description 68
- 238000000034 method Methods 0.000 claims description 79
- 239000007789 gas Substances 0.000 claims description 70
- 230000004888 barrier function Effects 0.000 claims description 42
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 38
- 238000007664 blowing Methods 0.000 claims description 34
- 239000010949 copper Substances 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 22
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 claims description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 15
- 229910052802 copper Inorganic materials 0.000 claims description 15
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 15
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 14
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000011229 interlayer Substances 0.000 description 66
- 150000001282 organosilanes Chemical class 0.000 description 23
- 239000010410 layer Substances 0.000 description 18
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 16
- 229910052581 Si3N4 Inorganic materials 0.000 description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 14
- 239000005751 Copper oxide Substances 0.000 description 12
- 229910000431 copper oxide Inorganic materials 0.000 description 12
- 238000012545 processing Methods 0.000 description 12
- 238000011946 reduction process Methods 0.000 description 12
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 11
- 238000010586 diagram Methods 0.000 description 11
- 229910000077 silane Inorganic materials 0.000 description 11
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 239000001257 hydrogen Substances 0.000 description 9
- 229910052739 hydrogen Inorganic materials 0.000 description 9
- 238000004458 analytical method Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000000137 annealing Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical compound C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000000862 absorption spectrum Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 125000001153 fluoro group Chemical group F* 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- -1 For example Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US6924408P | 2008-03-12 | 2008-03-12 | |
| US61/069,244 | 2008-03-12 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009218585A JP2009218585A (ja) | 2009-09-24 |
| JP2009218585A5 JP2009218585A5 (enExample) | 2012-09-20 |
| JP5143769B2 true JP5143769B2 (ja) | 2013-02-13 |
Family
ID=41062143
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009041598A Expired - Fee Related JP5143769B2 (ja) | 2008-03-12 | 2009-02-25 | 半導体装置およびその製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8278205B2 (enExample) |
| JP (1) | JP5143769B2 (enExample) |
| KR (1) | KR20090097827A (enExample) |
| CN (1) | CN101533799B (enExample) |
| TW (1) | TWI392056B (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8778810B2 (en) * | 2009-06-26 | 2014-07-15 | Tokyo Electron Limited | Plasma treatment method |
| US9340880B2 (en) | 2009-10-27 | 2016-05-17 | Silcotek Corp. | Semiconductor fabrication process |
| KR101512579B1 (ko) * | 2010-10-05 | 2015-04-15 | 실코텍 코포레이션 | 내마모성 코팅, 물건 및 방법 |
| US20120273948A1 (en) * | 2011-04-27 | 2012-11-01 | Nanya Technology Corporation | Integrated circuit structure including a copper-aluminum interconnect and method for fabricating the same |
| US11292924B2 (en) | 2014-04-08 | 2022-04-05 | Silcotek Corp. | Thermal chemical vapor deposition coated article and process |
| WO2017040623A1 (en) | 2015-09-01 | 2017-03-09 | Silcotek Corp. | Thermal chemical vapor deposition coating |
| CN107887323B (zh) | 2016-09-30 | 2020-06-05 | 中芯国际集成电路制造(北京)有限公司 | 互连结构及其制造方法 |
| KR102616489B1 (ko) | 2016-10-11 | 2023-12-20 | 삼성전자주식회사 | 반도체 장치 제조 방법 |
| CN108231659B (zh) | 2016-12-15 | 2020-07-07 | 中芯国际集成电路制造(北京)有限公司 | 互连结构及其制造方法 |
| CN106783730B (zh) * | 2016-12-28 | 2020-09-04 | 上海集成电路研发中心有限公司 | 一种形成空气隙/铜互连的方法 |
| JP6441989B2 (ja) * | 2017-04-27 | 2018-12-19 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置、プログラムおよび記録媒体 |
| US11161324B2 (en) | 2017-09-13 | 2021-11-02 | Silcotek Corp. | Corrosion-resistant coated article and thermal chemical vapor deposition coating process |
| CN113924636A (zh) * | 2019-05-20 | 2022-01-11 | 朗姆研究公司 | 作为SiCxOy的成核层的SixNy |
| WO2020252306A1 (en) | 2019-06-14 | 2020-12-17 | Silcotek Corp. | Nano-wire growth |
| US12473635B2 (en) | 2020-06-03 | 2025-11-18 | Silcotek Corp. | Dielectric article |
| US11978668B2 (en) | 2021-09-09 | 2024-05-07 | Samsung Electronics Co., Ltd. | Integrated circuit devices including a via and methods of forming the same |
| US20250273454A1 (en) * | 2024-02-28 | 2025-08-28 | Applied Materials, Inc. | Microwave assisted passivation layer removal |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08213343A (ja) * | 1995-01-31 | 1996-08-20 | Sony Corp | 半導体装置およびその製造方法 |
| EP1077479A1 (en) * | 1999-08-17 | 2001-02-21 | Applied Materials, Inc. | Post-deposition treatment to enchance properties of Si-O-C low K film |
| JP2001185549A (ja) * | 1999-12-24 | 2001-07-06 | Toshiba Corp | 半導体装置の製造方法 |
| KR100762863B1 (ko) * | 2000-06-30 | 2007-10-08 | 주식회사 하이닉스반도체 | 확산방지 티타늄-실리콘-질소 막을 이용한 구리금속배선방법 |
| JP2002319618A (ja) * | 2001-04-20 | 2002-10-31 | Anelva Corp | 配線用Ｃｕ膜の形成方法及び形成装置 |
| JP2003045960A (ja) * | 2001-08-01 | 2003-02-14 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| JP4293752B2 (ja) * | 2002-02-28 | 2009-07-08 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP2003347299A (ja) * | 2002-05-24 | 2003-12-05 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
| JP2004071956A (ja) | 2002-08-08 | 2004-03-04 | Toshiba Corp | 半導体装置の製造方法 |
| JP4454242B2 (ja) * | 2003-03-25 | 2010-04-21 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
| CN100499030C (zh) * | 2003-12-04 | 2009-06-10 | 东京毅力科创株式会社 | 半导体基板导电层表面的净化方法 |
| US7229911B2 (en) * | 2004-04-19 | 2007-06-12 | Applied Materials, Inc. | Adhesion improvement for low k dielectrics to conductive materials |
| US7193325B2 (en) * | 2004-04-30 | 2007-03-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reliability improvement of SiOC etch with trimethylsilane gas passivation in Cu damascene interconnects |
| JP4473824B2 (ja) * | 2005-01-21 | 2010-06-02 | 株式会社東芝 | 半導体装置の製造方法 |
| US8211794B2 (en) * | 2007-05-25 | 2012-07-03 | Texas Instruments Incorporated | Properties of metallic copper diffusion barriers through silicon surface treatments |
-
2009
- 2009-02-25 JP JP2009041598A patent/JP5143769B2/ja not_active Expired - Fee Related
- 2009-02-25 US US12/380,368 patent/US8278205B2/en not_active Expired - Fee Related
- 2009-02-25 TW TW098106059A patent/TWI392056B/zh not_active IP Right Cessation
- 2009-03-12 CN CN2009101189965A patent/CN101533799B/zh not_active Expired - Fee Related
- 2009-03-12 KR KR1020090021118A patent/KR20090097827A/ko not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| CN101533799B (zh) | 2011-10-05 |
| KR20090097827A (ko) | 2009-09-16 |
| TW200952119A (en) | 2009-12-16 |
| US8278205B2 (en) | 2012-10-02 |
| TWI392056B (zh) | 2013-04-01 |
| JP2009218585A (ja) | 2009-09-24 |
| US20090230558A1 (en) | 2009-09-17 |
| CN101533799A (zh) | 2009-09-16 |
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