JP5142001B2 - 薄膜音響共振子の形成方法 - Google Patents

薄膜音響共振子の形成方法 Download PDF

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Publication number
JP5142001B2
JP5142001B2 JP2001145259A JP2001145259A JP5142001B2 JP 5142001 B2 JP5142001 B2 JP 5142001B2 JP 2001145259 A JP2001145259 A JP 2001145259A JP 2001145259 A JP2001145259 A JP 2001145259A JP 5142001 B2 JP5142001 B2 JP 5142001B2
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Prior art keywords
resonator
shape
forming
film acoustic
frequency thin
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Expired - Fee Related
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JP2001145259A
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Japanese (ja)
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JP2002043879A5 (enExample
JP2002043879A (ja
Inventor
ポール バーバー ブラッドレー
レデル ギャメル ピーター
エー ハギンス ハロルド
ウォン ユーフェン
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Agere Systems LLC
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Agere Systems LLC
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/175—Acoustic mirrors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
JP2001145259A 2000-05-16 2001-05-15 薄膜音響共振子の形成方法 Expired - Fee Related JP5142001B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/571919 2000-05-16
US09/571,919 US6420202B1 (en) 2000-05-16 2000-05-16 Method for shaping thin film resonators to shape acoustic modes therein

Publications (3)

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JP2002043879A JP2002043879A (ja) 2002-02-08
JP2002043879A5 JP2002043879A5 (enExample) 2008-11-13
JP5142001B2 true JP5142001B2 (ja) 2013-02-13

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JP2001145259A Expired - Fee Related JP5142001B2 (ja) 2000-05-16 2001-05-15 薄膜音響共振子の形成方法

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US (1) US6420202B1 (enExample)
EP (1) EP1156584B1 (enExample)
JP (1) JP5142001B2 (enExample)

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US7889027B2 (en) * 2005-09-09 2011-02-15 Sony Corporation Film bulk acoustic resonator shaped as an ellipse with a part cut off
US7544612B1 (en) 2006-01-20 2009-06-09 Skyworks Solutions, Inc. Method and structure for reducing the effect of vertical steps in patterned layers in semiconductor structures
US7598827B2 (en) 2006-06-19 2009-10-06 Maxim Integrated Products Harmonic termination of power amplifiers using BAW filter output matching circuits
US7586389B2 (en) * 2006-06-19 2009-09-08 Maxim Integrated Products, Inc. Impedance transformation and filter using bulk acoustic wave technology
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US7385334B1 (en) 2006-11-20 2008-06-10 Sandia Corporation Contour mode resonators with acoustic reflectors
DE112008002181B4 (de) * 2007-08-14 2023-08-03 Avago Technologies International Sales Pte. Limited Bulkakustikwellenstruktur mit einer piezoelektrischen Aluminiumkupfernitrid-Schicht und darauf bezogenes Verfahren
WO2009023100A2 (en) * 2007-08-14 2009-02-19 Skyworks Solutions, Inc. Method for forming a multi-layer electrode underlying a piezoelectric layer and related structure
US7777596B2 (en) * 2007-12-18 2010-08-17 Robert Bosch Gmbh MEMS resonator structure and method
US7602102B1 (en) 2008-04-24 2009-10-13 Skyworks Solutions, Inc. Bulk acoustic wave resonator with controlled thickness region having controlled electromechanical coupling
US7795781B2 (en) * 2008-04-24 2010-09-14 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator with reduced energy loss
US7889025B1 (en) * 2008-06-10 2011-02-15 The United States Of America As Represented By The Secretary Of The Army Anti-reflective acoustic diffuser for SAW and BAW devices
JP5288920B2 (ja) * 2008-07-16 2013-09-11 日本電波工業株式会社 水晶振動用素子の製造方法
CN101477194B (zh) * 2009-02-17 2011-07-06 东南大学 一种转子碰摩声发射源定位方法
US9608589B2 (en) 2010-10-26 2017-03-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Method of forming acoustic resonator using intervening seed layer
US10763823B2 (en) 2015-12-30 2020-09-01 3M Innovative Properties Company Elliptically-shaped resonator markers with enhanced frequency stability and gain
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Publication number Publication date
EP1156584B1 (en) 2012-12-26
US6420202B1 (en) 2002-07-16
US20020022292A1 (en) 2002-02-21
JP2002043879A (ja) 2002-02-08
EP1156584A1 (en) 2001-11-21

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