JP3985965B2 - 金属膜の内部応力を用いた薄膜バルク音響共振器の製造方法および共振器 - Google Patents
金属膜の内部応力を用いた薄膜バルク音響共振器の製造方法および共振器 Download PDFInfo
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02133—Means for compensation or elimination of undesirable effects of stress
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
Description
・半導体基板の上面に第1層を積層するステップ、
・前記第1層の所定領域を取り除くステップ、
・前記所定の領域が取り除かれた第1層の上面に第1金属膜を蒸着し、前記第1層の形状に基づいた第1金属膜によるパターニングを行って前記下部電極層を形成するステップ、
・前記下部電極層の上面に圧電物質を蒸着し、前記下部電極層の形状に基づいた圧電物質に対するパターニングを行って圧電層を形成するステップ、
・前記圧電層の上面に第2金属膜を蒸着し、前記圧電層の形状に基づいた第2金属膜に対するパターニングを行って上部電極層を形成するステップ。
・前記上部電極層の前記圧電層に対応する部位に所定の第1曲げ防止凹溝を形成するステップと、
・前記第1曲げ防止凹溝の形成に先立ち、前記下部電極層をパターニングして第2曲げ防止凹溝を形成するステップと、
をさらに含む薄膜バルク音響共振器の製造方法を提供する。
・半導体基板、
・第1領域は前記半導体基板の信号ラインと電気的に接触し、第2領域は前記半導体基板と所定の高さで離隔するように形成された下部電極層、
・前記下部電極層の第2領域の上面に前記下部電極層の形状に基づいて形成された圧電層、
・前記圧電層の上面に前記圧電層の形状に基づいて形成された上部電極層。
110 犠牲層
120 下部電極層
130 圧電層
140 上部電極層
150 圧電共振構造物
A 伝導領域
B 支持領域
C 共振領域
360a、360b、360c 曲げ防止凹溝
Claims (11)
- 半導体基板の上面に第1層を積層するステップと、
前記第1層の所定領域を取り除くステップと、
前記所定領域が取り除かれた前記第1層の上面に第1金属膜を蒸着し、前記第1層の形状に基づいた第1金属膜によるパターニングを行って下部電極層を形成するステップと、
前記下部電極層の上面に圧電物質を蒸着し、前記下部電極層の形状に基づいた圧電物質に対するパターニングを行って圧電層を形成するステップと、
前記圧電層の上面に第2金属膜を蒸着し、前記圧電層の形状に基づいた第2金属膜に対するパターニングを行って上部電極層を形成するステップと、を含み、
前記下部電極層と前記上部電極層とに所定の上方向の応力が発生するように、前記第1金属膜と前記第2金属膜との各蒸着時に蒸着圧力および蒸着パワーのうち少なくともいずれか1つを調整することを特徴とする、薄膜バルク音響共振器の製造方法。 - 前記第1層において、前記所定領域を含む第1領域と、前記圧電層が積層される第2領域との間にある第3領域をパターニングし、所定のしわを形成するステップをさらに含むことを特徴とする、請求項1に記載の薄膜バルク音響共振器の製造方法。
- 前記所定のしわの断面形状は、櫛の歯状および/または連続する半球状であることを特徴とする、請求項2に記載の薄膜バルク音響共振器の製造方法。
- 前記上部電極層の前記圧電層に対応する部位に所定の第1曲げ防止凹溝を形成するステップと、
前記第1曲げ防止凹溝の形成に先立ち、前記下部電極層をパターニングして第2曲げ防止凹溝を形成するステップと、
をさらに含むことを特徴とする、請求項1に記載の薄膜バルク音響共振器の製造方法。 - 前記下部電極層の形成後に前記第1層を取り除くステップを更に含むことを特徴とする、請求項1に記載の薄膜バルク音響共振器の製造方法。
- 半導体基板と、
第1領域では前記半導体基板の信号ラインと電気的に接触し、第2領域では前記半導体基板から所定の高さだけ離れ、前記第1領域と前記第2領域との間にある第3領域では前記半導体基板から離れる方向に反っている下部電極層と、
前記下部電極層の第2領域の上面に前記下部電極層の形状に基づいて形成された圧電層と、
前記圧電層の上面に前記圧電層の形状に基づいて形成された上部電極層と、を含むことを特徴とする薄膜バルク音響共振器。 - 前記下部電極層の第3領域には所定のしわが形成されていることを特徴とする、請求項6に記載の薄膜バルク音響共振器。
- 前記所定のしわの断面形状は、櫛の歯状および/または連続する半球状であることを特徴とする請求項7に記載の薄膜バルク音響共振器。
- 前記上部電極層の前記圧電層に対応する部位に所定の第1曲げ防止凹溝が形成されていることを特徴とする、請求項6に記載の薄膜バルク音響共振器。
- 前記下部電極層の前記圧電層に対応する部位に、所定の第2曲げ防止凹溝が形成されていることを特徴とする、請求項6に記載の薄膜バルク音響共振器。
- 前記下部電極層は片持ち梁状であることを特徴とする請求項6に記載の薄膜バルク音響共振器。
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KR10-2003-0032651A KR100470708B1 (ko) | 2003-05-22 | 2003-05-22 | 금속막의 내부응력을 이용한 박막 벌크 음향 공진기제조방법 및 그에 의한 공진기 |
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US (2) | US7671427B2 (ja) |
EP (1) | EP1480335B1 (ja) |
JP (1) | JP3985965B2 (ja) |
KR (1) | KR100470708B1 (ja) |
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WO2004013893A2 (en) * | 2002-08-01 | 2004-02-12 | Georgia Tech Research Corporation | Piezo electric on seminconductor on- insulator resonator |
KR100599083B1 (ko) * | 2003-04-22 | 2006-07-12 | 삼성전자주식회사 | 캔틸레버 형태의 압전 박막 공진 소자 및 그 제조방법 |
US7492241B2 (en) * | 2005-06-02 | 2009-02-17 | The Regents Of The University Of California | Contour-mode piezoelectric micromechanical resonators |
-
2003
- 2003-05-22 KR KR10-2003-0032651A patent/KR100470708B1/ko active IP Right Grant
-
2004
- 2004-04-08 EP EP04252122A patent/EP1480335B1/en not_active Expired - Lifetime
- 2004-04-08 DE DE602004023997T patent/DE602004023997D1/de not_active Expired - Lifetime
- 2004-05-05 US US10/838,326 patent/US7671427B2/en active Active
- 2004-05-24 JP JP2004153486A patent/JP3985965B2/ja active Active
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2010
- 2010-01-08 US US12/684,454 patent/US7939356B2/en active Active
Also Published As
Publication number | Publication date |
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EP1480335A3 (en) | 2004-12-01 |
US20050001274A1 (en) | 2005-01-06 |
KR100470708B1 (ko) | 2005-03-10 |
JP2005033774A (ja) | 2005-02-03 |
DE602004023997D1 (de) | 2009-12-24 |
KR20040100348A (ko) | 2004-12-02 |
US7939356B2 (en) | 2011-05-10 |
EP1480335B1 (en) | 2009-11-11 |
EP1480335A2 (en) | 2004-11-24 |
US7671427B2 (en) | 2010-03-02 |
US20100132174A1 (en) | 2010-06-03 |
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