JP4490951B2 - フィルムバルク音響共振器及びその製造方法 - Google Patents
フィルムバルク音響共振器及びその製造方法 Download PDFInfo
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- 238000010897 surface acoustic wave method Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
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- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- 239000004020 conductor Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
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- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
現在、無線通信用RF(Radio Frequency)フィルタとして最も使われているものは、誘電体フィルタとSAW(Surface Acoustic Wave)フィルタである。
これとは異なり、FBARフィルタは、超軽量及び超薄型であり、半導体工程を利用して大量生産が容易であり、RF能動素子と自由に結合できる長所がある。
FBARを製作する工程としてはブラッグ反射(Brag Reflector)方式及びエアギャップ(Air Gap)方式がある。
図2Aに示された構造のFBARは、バルクマイクロマシニング(Bulk micro−machining)型FBARであり、基板20上に二酸化ケイ素(SiO2)などの物質でメンブレイン層21を形成し、前記基板の裏面を異方性エッチングして空洞部23を形成した後、前記メンブレイン層の上に音響共振器22を具現する方式で製造される。前記方式で製造されたFBARは、構造的に脆弱で歩留まりが低いため、実用化しにくい短所がある。
本発明の第二の目的は前述したFBARを製造する方法を提供することにある。
前記圧電膜は高屈折率媒質で形成され、前記下部電極は低屈折率媒質で形成されることが好ましい。
本発明の他の実施形態によると、基板の上面に下部電極を形成する段階と、前記下部電極の上面に圧電膜を形成し、前記下部電極との境界面で音響波の全反射を起こさせる傾きの結晶軸を有する圧電膜を形成する段階と、前記圧電膜の上面に上部電極を形成する段階と、を含むフィルムバルク型音響共振器の製造方法が提供される。
前記遮断膜は、前記上部電極を形成するための層と同一層をパターニングすることにより形成することができる。
前記圧電膜はスパッタリング法又は蒸発法によって形成することができる。
また、共振構造物を基板の上面に安定的に実装できる利点がある。
<音響共振器の構成>
図3は、本発明の一実施形態によるフィルムバルク音響共振器の構成を示す断面図である。図4は、図3のフィルムバルク音響共振器の一部(図中、符号番号IV)を拡大した図
面である。
基板101としては、シリコン基板を用いることができる。
下部電極110及び上部電極115は、圧電膜113に電界を印加する役割をするものである。下部電極110及び上部電極115としては、導電材、例えばアルミニウム(Al)、タングステン(W)、金(Au)、白金(Pt)、ニッケル(Ni)、チタン(Ti)、クロム(Cr)、パラジウム(Pd)、ルテニウム(Ru)、モリブデン(Mo)を用いることができる。
図4によると、圧電膜113の圧電現象によって生じた音響波は、結晶軸Cに沿って下部電極110側に入射し、下部電極110との境界面で境界面と垂直な軸と結晶軸とが成す角度、つまり、入射角(α°)と同一の反射角(θ°)で全反射する。
<製造方法>
以下、前述したように構成されたFBARの製造過程について説明する。
図5Bによると、下部電極110の上面に圧電膜113を蒸着した後、下部電極110の面積より小さい平面積を有するようにパターニングする。この時、圧電膜113は圧電現象によって生じる音響波が、下部電極110の上面で全反射を起こす結晶軸Cを有するように形成することが好ましい。ここで、圧電膜113は、スパッタリング方法又は蒸発法などによって形成できる。
従って、本発明の範囲は説明された実施形態に限定されてはいけず、前述した特許請求範囲のみならずこの特許請求範囲と均等なものによって定められるべきである。
110 下部電極
113 圧電膜
115 上部電極
117 遮断膜
C 結晶軸
Claims (6)
- 基板と、
前記基板の上面に形成された下部電極と、
前記下部電極の上面に形成され、前記下部電極との境界面で前記下部電極を透過する音響波の臨界角より大きい傾きを有する結晶軸Cを有するように、下部電極より屈折率が大きい高屈折率媒質で形成された圧電膜と、
前記圧電膜の上面に形成された上部電極と、
前記圧電膜の外周に形成された遮断膜とを含むフィルムバルク型音響共振器。 - 前記臨界角より大きい傾きを有する結晶軸Cは、下部電極の屈折率対圧電膜の屈折率を調節することにより得られる請求項1に記載のフィルムバルク型音響共振器。
- 前記圧電膜がZnOからなり、下部電極がAl、Ru及びMoからなる群から選択される少なくとも1種の金属からなる請求項1又は2に記載のフィルムバルク型音響共振器。
- 基板の上面に下部電極を形成する工程と、
前記下部電極の上面に圧電膜を形成し、前記下部電極との境界面で 前記下部電極を透過する音響波の臨界角より大きい傾きを有する結晶軸Cを有するように、下部電極より屈折率が大きい高屈折率媒質で圧電膜を形成する工程と、
前記圧電膜の上面に上部電極を形成する工程と、
前記圧電膜の外周を囲む遮断膜を形成する工程とを含むフィルムバルク型音響共振器の製造方法。 - 前記遮断膜は、前記上部電極を形成するための層と同一層をパターニングすることにより形成される請求項4に記載のフィルムバルク型音響共振器の製造方法。
- 前記圧電膜をスパッタリング法又は蒸発法によって形成する請求項4又は5に記載のフィルムバルク型音響共振器の製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR20050064803A KR100622398B1 (ko) | 2005-07-18 | 2005-07-18 | 필름 벌크 음향 공진기 및 그 제조 방법 |
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JP2007028612A JP2007028612A (ja) | 2007-02-01 |
JP4490951B2 true JP4490951B2 (ja) | 2010-06-30 |
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JP2006189256A Active JP4490951B2 (ja) | 2005-07-18 | 2006-07-10 | フィルムバルク音響共振器及びその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7423501B2 (ja) |
EP (1) | EP1746722A3 (ja) |
JP (1) | JP4490951B2 (ja) |
KR (1) | KR100622398B1 (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7466213B2 (en) * | 2003-10-06 | 2008-12-16 | Nxp B.V. | Resonator structure and method of producing it |
JP4963193B2 (ja) * | 2006-03-07 | 2012-06-27 | 日本碍子株式会社 | 圧電薄膜デバイス |
JP5051751B2 (ja) * | 2007-03-20 | 2012-10-17 | 日本電波工業株式会社 | 圧電薄膜振動子の製造方法及び圧電薄膜振動子 |
US20090081912A1 (en) * | 2007-09-24 | 2009-03-26 | Ricky Ray Burrow | Fragrance emitting patch |
KR101413067B1 (ko) * | 2008-01-23 | 2014-07-01 | 재단법인서울대학교산학협력재단 | 어레이 타입의 가변 캐패시터 장치 |
JPWO2010101026A1 (ja) * | 2009-03-06 | 2012-09-06 | 株式会社日立製作所 | 薄膜圧電弾性波共振器及び高周波フィルタ |
JP5918522B2 (ja) * | 2011-12-12 | 2016-05-18 | 太陽誘電株式会社 | フィルタおよびデュプレクサ |
KR101973423B1 (ko) * | 2014-12-08 | 2019-04-29 | 삼성전기주식회사 | 음향 공진기 및 그 제조 방법 |
US10361677B2 (en) * | 2016-02-18 | 2019-07-23 | X-Celeprint Limited | Transverse bulk acoustic wave filter |
US10200013B2 (en) | 2016-02-18 | 2019-02-05 | X-Celeprint Limited | Micro-transfer-printed acoustic wave filter device |
US10291203B2 (en) * | 2016-07-12 | 2019-05-14 | Murata Manufacturing Co., Ltd. | Piezoelectric MEMS resonator with a high quality factor |
US10804880B2 (en) | 2018-12-03 | 2020-10-13 | X-Celeprint Limited | Device structures with acoustic wave transducers and connection posts |
US11057017B2 (en) * | 2017-08-17 | 2021-07-06 | Samsung Electro-Mechanics Co., Ltd | Bulk-acoustic wave resonator |
US11528808B2 (en) | 2018-12-03 | 2022-12-13 | X Display Company Technology Limited | Printing components to substrate posts |
US11274035B2 (en) | 2019-04-24 | 2022-03-15 | X-Celeprint Limited | Overhanging device structures and related methods of manufacture |
US20210002128A1 (en) | 2018-12-03 | 2021-01-07 | X-Celeprint Limited | Enclosed cavity structures |
US11482979B2 (en) | 2018-12-03 | 2022-10-25 | X Display Company Technology Limited | Printing components over substrate post edges |
US10790173B2 (en) | 2018-12-03 | 2020-09-29 | X Display Company Technology Limited | Printed components on substrate posts |
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US3401275A (en) * | 1966-04-14 | 1968-09-10 | Clevite Corp | Composite resonator |
GB1207974A (en) * | 1966-11-17 | 1970-10-07 | Clevite Corp | Frequency selective apparatus including a piezoelectric device |
US3582839A (en) * | 1968-06-06 | 1971-06-01 | Clevite Corp | Composite coupled-mode filter |
JPS60116217A (ja) * | 1983-11-28 | 1985-06-22 | Nippon Telegr & Teleph Corp <Ntt> | 複合共振子 |
US4691714A (en) * | 1984-10-15 | 1987-09-08 | Adamtek Corporation | Rheological testing apparatus and method |
US4636678A (en) * | 1985-03-01 | 1987-01-13 | The United States Of America As Represented By The Secretary Of The Army | Compensation of acoustic wave devices |
US4719383A (en) * | 1985-05-20 | 1988-01-12 | The United States Of America As Represented By The United States Department Of Energy | Piezoelectric shear wave resonator and method of making same |
US6150703A (en) * | 1998-06-29 | 2000-11-21 | Trw Inc. | Lateral mode suppression in semiconductor bulk acoustic resonator (SBAR) devices using tapered electrodes, and electrodes edge damping materials |
FI107660B (fi) * | 1999-07-19 | 2001-09-14 | Nokia Mobile Phones Ltd | Resonaattorirakenne |
US20040007940A1 (en) * | 2002-07-15 | 2004-01-15 | Asia Pacific Microsystems, Inc. | Thin film acoustic wave device and the manufacturing method thereof |
US7230511B2 (en) * | 2003-09-12 | 2007-06-12 | Matsushita Electric Industrial Co., Ltd. | Thin film bulk acoustic resonator, method for producing the same, filter, composite electronic component device, and communication device |
JP2005277454A (ja) * | 2004-03-22 | 2005-10-06 | Tdk Corp | 圧電共振器およびそれを備えた電子部品 |
-
2005
- 2005-07-18 KR KR20050064803A patent/KR100622398B1/ko active IP Right Grant
-
2006
- 2006-04-03 US US11/395,298 patent/US7423501B2/en active Active
- 2006-07-05 EP EP20060253526 patent/EP1746722A3/en not_active Ceased
- 2006-07-10 JP JP2006189256A patent/JP4490951B2/ja active Active
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Publication number | Publication date |
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KR100622398B1 (ko) | 2006-09-12 |
US20070013463A1 (en) | 2007-01-18 |
EP1746722A2 (en) | 2007-01-24 |
EP1746722A3 (en) | 2009-12-23 |
JP2007028612A (ja) | 2007-02-01 |
US7423501B2 (en) | 2008-09-09 |
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