JP5141882B2 - バリア性を示すレジスト下層膜の形成用組成物及びレジスト下層膜のバリア性評価方法 - Google Patents

バリア性を示すレジスト下層膜の形成用組成物及びレジスト下層膜のバリア性評価方法 Download PDF

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Publication number
JP5141882B2
JP5141882B2 JP2008013962A JP2008013962A JP5141882B2 JP 5141882 B2 JP5141882 B2 JP 5141882B2 JP 2008013962 A JP2008013962 A JP 2008013962A JP 2008013962 A JP2008013962 A JP 2008013962A JP 5141882 B2 JP5141882 B2 JP 5141882B2
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underlayer film
resist underlayer
barrier property
resist
composition
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JP2009175436A (ja
JP2009175436A5 (US20080242721A1-20081002-C00053.png
Inventor
智久 石田
力丸 坂本
佳臣 広井
康志 境田
貴広 浜田
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Nissan Chemical Corp
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Nissan Chemical Corp
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  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Epoxy Resins (AREA)
JP2008013962A 2008-01-24 2008-01-24 バリア性を示すレジスト下層膜の形成用組成物及びレジスト下層膜のバリア性評価方法 Expired - Fee Related JP5141882B2 (ja)

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JP2008013962A JP5141882B2 (ja) 2008-01-24 2008-01-24 バリア性を示すレジスト下層膜の形成用組成物及びレジスト下層膜のバリア性評価方法

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JP2008013962A JP5141882B2 (ja) 2008-01-24 2008-01-24 バリア性を示すレジスト下層膜の形成用組成物及びレジスト下層膜のバリア性評価方法

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JP2009175436A JP2009175436A (ja) 2009-08-06
JP2009175436A5 JP2009175436A5 (US20080242721A1-20081002-C00053.png) 2010-12-16
JP5141882B2 true JP5141882B2 (ja) 2013-02-13

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9908990B2 (en) 2015-04-17 2018-03-06 Samsung Sdi Co., Ltd. Organic layer composition, organic layer, and method of forming patterns

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101804392B1 (ko) 2011-03-15 2017-12-04 닛산 가가쿠 고교 가부시키 가이샤 레지스트 하층막 형성 조성물 및 이를 이용한 레지스트 패턴의 형성 방법
JP6083537B2 (ja) * 2012-03-23 2017-02-22 日産化学工業株式会社 Ｅｕｖリソグラフィー用レジスト下層膜形成組成物
JP6132105B2 (ja) * 2012-05-07 2017-05-24 日産化学工業株式会社 レジスト下層膜形成組成物
JP6256719B2 (ja) 2013-02-25 2018-01-10 日産化学工業株式会社 水酸基を有するアリールスルホン酸塩含有レジスト下層膜形成組成物
CN110698331B (zh) 2013-06-26 2022-07-19 日产化学工业株式会社 包含被置换的交联性化合物的抗蚀剂下层膜形成用组合物
JP6410053B2 (ja) * 2013-08-08 2018-10-24 日産化学株式会社 窒素含有環化合物を含むポリマーを含むレジスト下層膜形成組成物
JP6335807B2 (ja) * 2015-01-27 2018-05-30 四国化成工業株式会社 新規なグリコールウリル類とその利用
CN116235112A (zh) 2020-09-28 2023-06-06 日产化学株式会社 包含具有氟烷基的有机酸或其盐的抗蚀剂下层膜形成用组合物

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JPH0980755A (ja) * 1995-09-12 1997-03-28 Sony Corp レジストプロセス及び多層レジスト膜
JP3506357B2 (ja) * 1996-12-13 2004-03-15 東京応化工業株式会社 リソグラフィー用下地材
EP1172695A1 (en) * 2000-07-14 2002-01-16 Shipley Company LLC Barrier layer
AU2003271123A1 (en) * 2002-10-09 2004-05-04 Nissan Chemical Industries, Ltd. Composition for forming antireflection film for lithography
JP2005142339A (ja) * 2003-11-06 2005-06-02 Semiconductor Leading Edge Technologies Inc パターン形成方法
JP2005268321A (ja) * 2004-03-16 2005-09-29 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
EP1705519B1 (en) * 2005-03-20 2016-07-06 Rohm and Haas Electronic Materials, L.L.C. Method of treating a microelectronic substrate
KR100655064B1 (ko) * 2005-05-27 2006-12-06 제일모직주식회사 반사방지성을 갖는 하드마스크 조성물
KR101276028B1 (ko) * 2006-03-27 2013-06-19 닛산 가가쿠 고교 가부시키 가이샤 Ｑｃｍ 센서를 이용한 열경화막중의 승화물의 측정 방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9908990B2 (en) 2015-04-17 2018-03-06 Samsung Sdi Co., Ltd. Organic layer composition, organic layer, and method of forming patterns

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