JP5141061B2 - パワーモジュール - Google Patents
パワーモジュール Download PDFInfo
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- JP5141061B2 JP5141061B2 JP2007078276A JP2007078276A JP5141061B2 JP 5141061 B2 JP5141061 B2 JP 5141061B2 JP 2007078276 A JP2007078276 A JP 2007078276A JP 2007078276 A JP2007078276 A JP 2007078276A JP 5141061 B2 JP5141061 B2 JP 5141061B2
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- power module
- heat sink
- insulating resin
- layer
- resin layer
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4846—Connecting portions with multiple bonds on the same bonding area
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/4901—Structure
- H01L2224/4903—Connectors having different sizes, e.g. different diameters
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
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- H—ELECTRICITY
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- H01L2924/13—Discrete devices, e.g. 3 terminal devices
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- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13062—Junction field-effect transistor [JFET]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Description
−パワーモジュールの構造−
図1は、実施の形態におけるパワーモジュールセットの構造を示す斜視図である。同図に示すように、本実施形態のパワーモジュールセットは、放熱器50の上に、複数のパワーモジュール10を取り付けて構成されている。放熱器50は、天板50aと天板50aに接合された容器50bとからなり、天板50aには、パワーモジュール10を組み込むための多数の矩形状貫通穴が設けられている。本実施形態においては、矩形状貫通穴が多数設けられているが、1つだけでもよい。放熱器50を構成する天板50aと容器50bとは、アルミニウムまたはアルミニウム合金からなり、ダイキャスト,押し出し,鍛造,鋳造,機械加工等によって組み立てることができる。
次に、図4(a)〜(d),図5(a)〜(d)および図6(a)〜(c)を参照しながら、本実施の形態のパワーモジュールの製造方法について説明する。図4(a)〜(d)は、本実施の形態の製造工程における,樹脂接着剤の塗布からモジュール樹脂枠の取付までの工程を示す断面図である。図5(a)〜(d)は、本実施の形態の製造工程における,チップマウントからポッティングまでの工程を示す断面図である。図6(a)〜(c)は、本実施の形態の製造工程における,Oリングの設置からボルトの締結までの工程を示す断面図である。
図7は、本実施の形態のパワーモジュールの断面図である。本実施の形態のパワーモジュールにおいては、ヒートシンク21の上面(絶縁樹脂層26との接触面)の非熱伝導領域Rohにサンドブラストによる凹凸部22が形成されているとともに、金属配線23の下面(絶縁樹脂層26との接触面)の非熱伝導領域Rohにも、サンドブラストによる凹凸部27が形成されている。さらに、金属配線23の上面(半田層14との接触面)全体にもサンドブラストによる凹凸部28が形成されている。その他の部材は、実施の形態1について説明したとおりであり、実施の形態1と同じ符号を付して、説明を省略する。
図8は、実施の形態3におけるパワーモジュールの断面図である。同図に示すように、本実施の形態では、ヒートシンク21の絶縁樹脂層26との接触面のうちの非熱伝導領域Rohには、多数の凹部からなる凹凸部22が形成されている。凹凸部22の多数の凹部のうちの2つの凹部22a(図8には、1つの凹部22aのみ表示)は、特に深さおよび径が大きく形成されている。一方、金属配線23の2つの部位には、コイニング加工によって下方に突出するように形成された2つの凸部29が設けられている。そして、ヒートシンク21の凹凸部22のうちの2つの凹部22aと、金属配線23の2つの凸部29とは、互いに係合している。つまり、この係合関係を利用して、金属配線23をヒートシンク21に設置する際の位置決め機能を持たせている。
本発明のパワーモジュールに配置される半導体素子は、ワイドバンドギャップ半導体(SiC,GaNなど)を用いたパワーデバイスでもよいし、Siを用いたパワーデバイスでもよい。
11 半導体チップ
12 上面電極
13 裏面電極
14 半田層
17 信号配線
18 大電流用配線
21 ヒートシンク
21a 平板部
21b フィン部
22 凹凸部
22a 凹部
23 金属配線
25 Oリング
26 絶縁樹脂層
27 凹凸部
28 凹凸部
29 凸部
40 ゲル層
50 放熱器
50a 天板
50b 容器
51 空間
53 モジュール樹脂枠
56 電極端子層
Rht 熱伝導領域
Roh 非熱伝導領域
Claims (5)
- 半導体素子が形成された半導体チップと、
前記半導体素子と外部機器とを電気的に接続するための配線部材と、
前記半導体チップと配線部材とを接合する接合部と、
ヒートシンクと、
前記配線部材と前記ヒートシンクとを固着する絶縁樹脂層とを備え、
前記ヒートシンクの絶縁樹脂層との接触面のうち少なくとも一部には、凹凸部が形成されており、
且つ前記凹凸部は、前記半導体チップからの熱伝導を受ける所定領域の外側のみに形成されている、パワーモジュール。 - 請求項1記載のパワーモジュールにおいて、
前記凹凸部は、サンドブラスト面である、パワーモジュール。 - 請求項1または2記載のパワーモジュールにおいて、
前記配線部材の絶縁樹脂層との接触面のうち少なくとも一部には、凹凸部が形成されており、
且つ前記凹凸部は、前記半導体チップからの熱伝導を受ける所定領域の外側のみに形成されている、パワーモジュール。 - 請求項3記載のパワーモジュールにおいて、
前記配線部材およびヒートシンクの凹凸部の少なくとも一部は、互いに係合する位置決め部である、パワーモジュール。 - 請求項1〜4のいずれかに記載のパワーモジュールにおいて、
前記配線部材と半導体チップとの接合部は、半田によって構成されている、パワーモジュール。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007078276A JP5141061B2 (ja) | 2007-03-26 | 2007-03-26 | パワーモジュール |
Applications Claiming Priority (1)
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JP2007078276A JP5141061B2 (ja) | 2007-03-26 | 2007-03-26 | パワーモジュール |
Publications (2)
Publication Number | Publication Date |
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JP2008243877A JP2008243877A (ja) | 2008-10-09 |
JP5141061B2 true JP5141061B2 (ja) | 2013-02-13 |
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Application Number | Title | Priority Date | Filing Date |
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JP2007078276A Expired - Fee Related JP5141061B2 (ja) | 2007-03-26 | 2007-03-26 | パワーモジュール |
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JP (1) | JP5141061B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010267663A (ja) * | 2009-05-12 | 2010-11-25 | Toyota Motor Corp | パワーモジュール製造方法およびその方法により製造したパワーモジュールおよびパワーモジュール製造装置 |
JP6391527B2 (ja) * | 2015-04-16 | 2018-09-19 | 三菱電機株式会社 | パワー半導体モジュール |
JP6660412B2 (ja) * | 2018-03-01 | 2020-03-11 | ローム株式会社 | 半導体装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3605547B2 (ja) * | 1999-06-11 | 2004-12-22 | 松下電器産業株式会社 | 放熱基板及びその製造方法 |
JP3830726B2 (ja) * | 2000-04-26 | 2006-10-11 | 松下電器産業株式会社 | 熱伝導基板とその製造方法およびパワーモジュール |
JP4089636B2 (ja) * | 2004-02-19 | 2008-05-28 | 三菱電機株式会社 | 熱伝導性樹脂シートの製造方法およびパワーモジュールの製造方法 |
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