JP5138922B2 - 感光性組成物 - Google Patents
感光性組成物 Download PDFInfo
- Publication number
- JP5138922B2 JP5138922B2 JP2006301474A JP2006301474A JP5138922B2 JP 5138922 B2 JP5138922 B2 JP 5138922B2 JP 2006301474 A JP2006301474 A JP 2006301474A JP 2006301474 A JP2006301474 A JP 2006301474A JP 5138922 B2 JP5138922 B2 JP 5138922B2
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- Prior art keywords
- free radical
- layer
- monomers
- photosensitive
- coating
- Prior art date
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Classifications
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- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
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Description
A:MAA/MMA/EA(重量比8/81.25/10.75)ポリマー(Mw=12,900)とPGME(56.31重量%固形分)
B:EA/IBOMA/MMA/HEMA/MAA(重量比28/20/37/5/10)ポリマー(Mw=20,000)とPGME(54.3重量%固形分)
C:EA/MMA/MAA(重量比25/65/10)ポリマー(Mw=19,700)とPGME(54.7重量%固形分)
D:BMA/MMA/HEMA/MAA(重量比45/30/10/15)ポリマー(Mw=29,800)とPGME(52.2重量%固形分)
E:EA/IBOMA//MAA(重量比39/43/18)ポリマー(Mw=25,500)とPGME(52.1重量%固形分)
略語:MAA(メタクリル酸);MMA(メチルメタクリレート);EA(エチルアクリレート);HEMA(2−ヒドロキシエチルメタクリレート);IBOMA(イソボルニルメタクリレート、MEHQ(ヒドロキノンモノメチルエーテル);TEMPO(2,2,6,6−テトラメチル−1−ピペリジニルオキシ);HO−TEMPO(4−ヒドロキシ−2,2,6,6−テトラメチルピペリジン1−オキシル);BHO−TEMPO(4−ヒドロキシ−2,2,6,6−テトラメチルピペリジン1−オキシルベンゾエート);Ac−TEMPO(4−アセトアミド−2,2,6,6−テトラメチルピペリジン1−オキシル);Oil Blue N(1,4−ビス(ペンチルアミノ)−アントラキノン);ITX(イソプロピル−9H−チオキサンテン−9−オン);I−907(Ciba−Geigy Irgacure 907(2−メチル−4’−(メチルチオ)−2−モルホリノプロピオフェノン));TPPSN(トリフェニルホスフィン);TPPST(トリフェニルホスファイト);PGME(プロピレングリコールモノメチルエーテル);SR 351LV(Sartomer SR 351LV(トリメチロールプロパントリアクリレート));SR 399(Sartomer SR 399(ジペンタエリスリトールエーテル、ペンタアクリレート));nm(測定せず)。
注1:この試料の側壁の外形は直線ではなかった。被膜厚の半分で側壁がホールに張り出して砂時計のようにくびれた形のホールをもたらすように、この側壁の上半分は76°の角度で漸減し、それに対してその線の下半分は94°で漸減していた。
Claims (9)
- アクリル酸および/またはメタクリル酸と、アクリレートモノマー、メタクリレートモノマーおよびビニル芳香族モノマーから選択される1以上のモノマーとのフリーラジカル重合によって調製される結合剤ポリマー;
2以上のエチレン性不飽和基を有する、フリーラジカル重合性モノマー、
フリーラジカル光開始剤;並びに
安定なフリーラジカル阻害剤、
を含む感光性組成物であって、スピンコーティングによる1回の適用で50ミクロン以上の乾燥厚までコーティングすることができる感光性組成物。 - スピンコーティングによる1回の適用で100ミクロンより厚い乾燥厚までコーティングすることができる請求項1記載の感光性組成物。
- 結合剤ポリマーがエチルアクリレート、メチルメタクリレート、およびメタクリル酸のフリーラジカル重合によって調製される請求項1記載の感光性組成物。
- 安定なフリーラジカル阻害剤が2,2,6,6−テトラメチル−1−ピペリジニルオキシ、2,2−ジフェニル−1−ピクリルヒドラジル、もしくはそれらの誘導体を含む請求項1記載の感光性組成物。
- 剥離可能な担体基体:および
該担体基体上の、請求項1記載の感光性組成物を含む感光性層:
を含む乾燥被膜フォトレジスト。 - 基体上にパターン化された層を形成する方法であって、
(a)アクリル酸および/もしくはメタクリル酸と、アクリレートモノマー、メタクリレートモノマーおよびビニル芳香族モノマーから選択される1以上のモノマーとのフリーラジカル重合によって調製される結合剤ポリマー;2以上のエチレン性不飽和基を有するフリーラジカル重合性モノマー、フリーラジカル光開始剤;並びに安定なフリーラジカル阻害剤を含む組成物を含む感光性層を基体上に配置することであって、感光性層をスピンコーティングによる1回の適用で少なくとも50ミクロンの乾燥厚までコーティングすること;
(b)該感光性層を像様に化学線に暴露すること;および
(c)暴露した層を現像し、それによりパターン化された層を形成すること、
を含む方法。 - (a)がスピンコーティングによる1回の適用で感光性層をコーティングすることを含む請求項6記載の方法であって、パターン化された層の1以上の部分が1.5以上のアスペクト比を有する方法。
- 基体が半導体ウェハである請求項6記載の方法であって、
(d)基体の暴露された領域上に金属を堆積させること;および
(e)パターン化された層を除去して金属バンプを有する半導体ウェハを提供すること、
をさらに含む方法。 - 安定なフリーラジカル阻害剤が2,2,6,6−テトラメチル−1−ピペリジニルオキシ、2,2−ジフェニル−1−ピクリルヒドラジル、もしくはそれらの誘導体を含む請求項6記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US73459905P | 2005-11-08 | 2005-11-08 | |
US60/734599 | 2005-11-08 |
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EP (1) | EP1783548B1 (ja) |
JP (1) | JP5138922B2 (ja) |
KR (2) | KR101403899B1 (ja) |
CN (1) | CN1975577B (ja) |
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EP1783548B1 (en) * | 2005-11-08 | 2017-03-08 | Rohm and Haas Electronic Materials LLC | Method of forming a patterned layer on a substrate |
JP5280011B2 (ja) * | 2007-03-19 | 2013-09-04 | 東京応化工業株式会社 | レジストパターン形成方法 |
US8354216B2 (en) * | 2008-07-15 | 2013-01-15 | Eastman Kodak Company | Negative-working imaging elements and methods of use |
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US20100151118A1 (en) * | 2008-12-17 | 2010-06-17 | Eastman Chemical Company | Carrier solvent compositions, coatings compositions, and methods to produce thick polymer coatings |
CN101762980B (zh) * | 2008-12-24 | 2013-10-09 | 株式会社Lg化学 | 用于同时形成两种独立的柱状间隔物图案的组合物 |
JPWO2014024804A1 (ja) * | 2012-08-06 | 2016-07-25 | 日立化成株式会社 | 永久マスクレジスト用感光性樹脂組成物、感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法 |
JP6059071B2 (ja) * | 2013-04-23 | 2017-01-11 | 東京応化工業株式会社 | 被膜形成方法 |
US8877630B1 (en) * | 2013-11-12 | 2014-11-04 | Chipmos Technologies Inc. | Semiconductor structure having a silver alloy bump body and manufacturing method thereof |
US9599896B2 (en) * | 2014-03-14 | 2017-03-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist system and method |
WO2017116858A1 (en) * | 2015-12-30 | 2017-07-06 | Fujifilm Electronic Materials U.S.A., Inc. | Photosensitive stacked structure |
JP7494731B2 (ja) * | 2020-02-04 | 2024-06-04 | 信越化学工業株式会社 | ポジ型レジスト材料及びパターン形成方法 |
WO2022174211A1 (en) * | 2021-02-09 | 2022-08-18 | Dupont Electronics, Inc. | Photosensitive composition and photoresist dry film made |
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-
2006
- 2006-11-06 EP EP06255719.4A patent/EP1783548B1/en active Active
- 2006-11-07 TW TW095141085A patent/TWI361337B/zh active
- 2006-11-07 JP JP2006301474A patent/JP5138922B2/ja active Active
- 2006-11-08 US US11/594,551 patent/US7932016B2/en active Active
- 2006-11-08 CN CN200610146456.4A patent/CN1975577B/zh active Active
- 2006-11-08 KR KR1020060109727A patent/KR101403899B1/ko active IP Right Grant
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2011
- 2011-04-26 US US13/094,629 patent/US8455175B2/en active Active
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- 2014-02-17 KR KR1020140018074A patent/KR20140029508A/ko not_active Application Discontinuation
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US20110262861A1 (en) | 2011-10-27 |
EP1783548A2 (en) | 2007-05-09 |
US20070105046A1 (en) | 2007-05-10 |
KR20070049583A (ko) | 2007-05-11 |
CN1975577B (zh) | 2011-12-21 |
JP2007133398A (ja) | 2007-05-31 |
US8455175B2 (en) | 2013-06-04 |
KR101403899B1 (ko) | 2014-06-09 |
CN1975577A (zh) | 2007-06-06 |
TWI361337B (en) | 2012-04-01 |
KR20140029508A (ko) | 2014-03-10 |
EP1783548B1 (en) | 2017-03-08 |
US7932016B2 (en) | 2011-04-26 |
TW200731014A (en) | 2007-08-16 |
EP1783548A3 (en) | 2011-06-15 |
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