JP5137310B2 - トレンチ・キャパシタ・アレイを含む構造およびその形成方法（ｓｏｉチップ用の簡略化した埋込プレート構造およびプロセス） - Google Patents

トレンチ・キャパシタ・アレイを含む構造およびその形成方法（ｓｏｉチップ用の簡略化した埋込プレート構造およびプロセス） Download PDF

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JP5137310B2
JP5137310B2 JP2006061418A JP2006061418A JP5137310B2 JP 5137310 B2 JP5137310 B2 JP 5137310B2 JP 2006061418 A JP2006061418 A JP 2006061418A JP 2006061418 A JP2006061418 A JP 2006061418A JP 5137310 B2 JP5137310 B2 JP 5137310B2
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Prior art keywords
trench
layer
semiconductor region
unitary
buried
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JP2006061418A
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English (en)
Japanese (ja)
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JP2006253684A5 (enExample
JP2006253684A (ja
Inventor
カングオ・チェン
ラマチャンドラ・ディバカルニ
ハーバート・エル・ホ
カール・ジェイ・レーデンス
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International Business Machines Corp
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International Business Machines Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H10B12/0387—Making the trench
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/045—Manufacture or treatment of capacitors having potential barriers, e.g. varactors
    • H10D1/047—Manufacture or treatment of capacitors having potential barriers, e.g. varactors of conductor-insulator-semiconductor capacitors, e.g. trench capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H10D1/665—Trench conductor-insulator-semiconductor capacitors, e.g. trench MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H10B12/0383—Making the capacitor or connections thereto the capacitor being in a trench in the substrate wherein the transistor is vertical
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H10B12/0385—Making a connection between the transistor and the capacitor, e.g. buried strap

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
JP2006061418A 2005-03-08 2006-03-07 トレンチ・キャパシタ・アレイを含む構造およびその形成方法（ｓｏｉチップ用の簡略化した埋込プレート構造およびプロセス） Expired - Fee Related JP5137310B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/906808 2005-03-08
US10/906,808 US8053823B2 (en) 2005-03-08 2005-03-08 Simplified buried plate structure and process for semiconductor-on-insulator chip

Publications (3)

Publication Number Publication Date
JP2006253684A JP2006253684A (ja) 2006-09-21
JP2006253684A5 JP2006253684A5 (enExample) 2008-12-04
JP5137310B2 true JP5137310B2 (ja) 2013-02-06

Family

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JP2006061418A Expired - Fee Related JP5137310B2 (ja) 2005-03-08 2006-03-07 トレンチ・キャパシタ・アレイを含む構造およびその形成方法（ｓｏｉチップ用の簡略化した埋込プレート構造およびプロセス）

Country Status (4)

Country Link
US (1) US8053823B2 (enExample)
JP (1) JP5137310B2 (enExample)
CN (1) CN1832183A (enExample)
TW (1) TW200711149A (enExample)

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US20070045698A1 (en) * 2005-08-31 2007-03-01 International Business Machines Corporation Semiconductor structures with body contacts and fabrication methods thereof
US20070045697A1 (en) * 2005-08-31 2007-03-01 International Business Machines Corporation Body-contacted semiconductor structures and methods of fabricating such body-contacted semiconductor structures
US7626257B2 (en) * 2006-01-18 2009-12-01 Infineon Technologies Ag Semiconductor devices and methods of manufacture thereof
US7595262B2 (en) * 2006-10-27 2009-09-29 Qimonda Ag Manufacturing method for an integrated semiconductor structure
US7564096B2 (en) * 2007-02-09 2009-07-21 Fairchild Semiconductor Corporation Scalable power field effect transistor with improved heavy body structure and method of manufacture
US7808028B2 (en) * 2007-04-18 2010-10-05 International Business Machines Corporation Trench structure and method of forming trench structure
US7713814B2 (en) * 2008-01-04 2010-05-11 International Business Machines Corporation Hybrid orientation substrate compatible deep trench capacitor embedded DRAM
US7888723B2 (en) * 2008-01-18 2011-02-15 International Business Machines Corporation Deep trench capacitor in a SOI substrate having a laterally protruding buried strap
US7384842B1 (en) * 2008-02-14 2008-06-10 International Business Machines Corporation Methods involving silicon-on-insulator trench memory with implanted plate
US7910451B2 (en) * 2008-04-04 2011-03-22 International Business Machines Corporation Simultaneous buried strap and buried contact via formation for SOI deep trench capacitor
US9059319B2 (en) * 2010-01-25 2015-06-16 International Business Machines Corporation Embedded dynamic random access memory device and method
US8298908B2 (en) * 2010-02-11 2012-10-30 International Business Machines Corporation Structure and method for forming isolation and buried plate for trench capacitor
US8354675B2 (en) * 2010-05-07 2013-01-15 International Business Machines Corporation Enhanced capacitance deep trench capacitor for EDRAM
US8652925B2 (en) 2010-07-19 2014-02-18 International Business Machines Corporation Method of fabricating isolated capacitors and structure thereof
US8232163B2 (en) 2010-11-01 2012-07-31 International Business Machines Corporation Lateral epitaxial grown SOI in deep trench structures and methods of manufacture
US8647945B2 (en) 2010-12-03 2014-02-11 International Business Machines Corporation Method of forming substrate contact for semiconductor on insulator (SOI) substrate
TWI415264B (zh) * 2011-02-17 2013-11-11 Anpec Electronics Corp Dyed transistor with thick underlying dielectric layer and method for making the same
EP2498280B1 (en) * 2011-03-11 2020-04-29 Soitec DRAM with trench capacitors and logic back-biased transistors integrated on an SOI substrate comprising an intrinsic semiconductor layer and manufacturing method thereof
US9307701B2 (en) 2011-03-24 2016-04-12 Dirtt Environmental Solutions, Ltd Modular walls with incorporated planters
US9142508B2 (en) * 2011-06-27 2015-09-22 Tessera, Inc. Single exposure in multi-damascene process
US20130043559A1 (en) * 2011-08-17 2013-02-21 International Business Machines Corporation Trench formation in substrate
US8586444B2 (en) * 2012-03-23 2013-11-19 International Business Machines Corporation Creating deep trenches on underlying substrate
US8557657B1 (en) * 2012-05-18 2013-10-15 International Business Machines Corporation Retrograde substrate for deep trench capacitors
TW201403782A (zh) 2012-07-04 2014-01-16 財團法人工業技術研究院 基底穿孔的製造方法、矽穿孔結構及其電容控制方法
US8927989B2 (en) * 2012-11-28 2015-01-06 International Business Machines Corporation Voltage contrast inspection of deep trench isolation
US9412640B2 (en) 2013-01-25 2016-08-09 GlobalFoundries, Inc. Semiconductor device including substrate contact and related method
US9252242B2 (en) * 2013-03-25 2016-02-02 International Business Machines Corporation Semiconductor structure with deep trench thermal conduction
CN103456620B (zh) * 2013-09-11 2016-03-02 中微半导体设备(上海)有限公司 半导体结构的形成方法
ITUA20162174A1 (it) * 2016-03-31 2017-10-01 St Microelectronics Srl Procedimento di fabbricazione di un sensore di pressione mems e relativo sensore di pressione mems
US11121207B2 (en) * 2016-11-10 2021-09-14 Texas Instruments Incorporated Integrated trench capacitor with top plate having reduced voids
US10043824B2 (en) 2016-12-15 2018-08-07 Vanguard International Semiconductor Corporation Semiconductor device including a vacuum gap and method for manufacturing the same
EP3828932B1 (en) * 2019-11-29 2022-09-07 Infineon Technologies Dresden GmbH & Co . KG Method for manufacturing a sensor device with a buried deep trench structure and sensor device
CN113497006B (zh) * 2020-03-20 2024-12-13 中芯国际集成电路制造(北京)有限公司 电容结构及其形成方法
US12015051B2 (en) * 2021-09-30 2024-06-18 Macom Technology Solutions Holdings, Inc. Semiconductor device and method of forming monolithic surge protection resistor
CN116544283B (zh) * 2023-04-28 2024-06-14 上海朗矽科技有限公司 嵌入式电容器及嵌入式电容器的制作方法

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Also Published As

Publication number Publication date
US8053823B2 (en) 2011-11-08
CN1832183A (zh) 2006-09-13
US20060202249A1 (en) 2006-09-14
JP2006253684A (ja) 2006-09-21
TW200711149A (en) 2007-03-16

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