TW200711149A - Simplified buried plate structure and process for semiconductor-on-insulator chip - Google Patents

Simplified buried plate structure and process for semiconductor-on-insulator chip

Info

Publication number
TW200711149A
TW200711149A TW095107390A TW95107390A TW200711149A TW 200711149 A TW200711149 A TW 200711149A TW 095107390 A TW095107390 A TW 095107390A TW 95107390 A TW95107390 A TW 95107390A TW 200711149 A TW200711149 A TW 200711149A
Authority
TW
Taiwan
Prior art keywords
trenches
array
contact hole
buried
trench capacitors
Prior art date
Application number
TW095107390A
Other languages
English (en)
Chinese (zh)
Inventor
Kangguo Cheng
Ramachandra Divakaruni
Herbert L Ho
Carl J Radens
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of TW200711149A publication Critical patent/TW200711149A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H10B12/0387—Making the trench
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/045—Manufacture or treatment of capacitors having potential barriers, e.g. varactors
    • H10D1/047—Manufacture or treatment of capacitors having potential barriers, e.g. varactors of conductor-insulator-semiconductor capacitors, e.g. trench capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H10D1/665—Trench conductor-insulator-semiconductor capacitors, e.g. trench MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H10B12/0383—Making the capacitor or connections thereto the capacitor being in a trench in the substrate wherein the transistor is vertical
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H10B12/0385—Making a connection between the transistor and the capacitor, e.g. buried strap

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
TW095107390A 2005-03-08 2006-03-06 Simplified buried plate structure and process for semiconductor-on-insulator chip TW200711149A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/906,808 US8053823B2 (en) 2005-03-08 2005-03-08 Simplified buried plate structure and process for semiconductor-on-insulator chip

Publications (1)

Publication Number Publication Date
TW200711149A true TW200711149A (en) 2007-03-16

Family

ID=36969918

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095107390A TW200711149A (en) 2005-03-08 2006-03-06 Simplified buried plate structure and process for semiconductor-on-insulator chip

Country Status (4)

Country Link
US (1) US8053823B2 (enExample)
JP (1) JP5137310B2 (enExample)
CN (1) CN1832183A (enExample)
TW (1) TW200711149A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI415264B (zh) * 2011-02-17 2013-11-11 Anpec Electronics Corp Dyed transistor with thick underlying dielectric layer and method for making the same
TWI508265B (zh) * 2010-05-07 2015-11-11 Globalfoundries Us 2 Llc 用於ｅＤＲＡＭ之增強電容深溝渠電容器
TWI578495B (zh) * 2011-03-11 2017-04-11 索泰克公司 製造半導體裝置之方法和製造晶圓的方法，及其半導體裝置和晶圓
US10043824B2 (en) 2016-12-15 2018-08-07 Vanguard International Semiconductor Corporation Semiconductor device including a vacuum gap and method for manufacturing the same

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US20070045698A1 (en) * 2005-08-31 2007-03-01 International Business Machines Corporation Semiconductor structures with body contacts and fabrication methods thereof
US20070045697A1 (en) * 2005-08-31 2007-03-01 International Business Machines Corporation Body-contacted semiconductor structures and methods of fabricating such body-contacted semiconductor structures
US7626257B2 (en) * 2006-01-18 2009-12-01 Infineon Technologies Ag Semiconductor devices and methods of manufacture thereof
US7595262B2 (en) * 2006-10-27 2009-09-29 Qimonda Ag Manufacturing method for an integrated semiconductor structure
US7564096B2 (en) * 2007-02-09 2009-07-21 Fairchild Semiconductor Corporation Scalable power field effect transistor with improved heavy body structure and method of manufacture
US7808028B2 (en) * 2007-04-18 2010-10-05 International Business Machines Corporation Trench structure and method of forming trench structure
US7713814B2 (en) * 2008-01-04 2010-05-11 International Business Machines Corporation Hybrid orientation substrate compatible deep trench capacitor embedded DRAM
US7888723B2 (en) * 2008-01-18 2011-02-15 International Business Machines Corporation Deep trench capacitor in a SOI substrate having a laterally protruding buried strap
US7384842B1 (en) * 2008-02-14 2008-06-10 International Business Machines Corporation Methods involving silicon-on-insulator trench memory with implanted plate
US7910451B2 (en) * 2008-04-04 2011-03-22 International Business Machines Corporation Simultaneous buried strap and buried contact via formation for SOI deep trench capacitor
US9059319B2 (en) * 2010-01-25 2015-06-16 International Business Machines Corporation Embedded dynamic random access memory device and method
US8298908B2 (en) * 2010-02-11 2012-10-30 International Business Machines Corporation Structure and method for forming isolation and buried plate for trench capacitor
US8652925B2 (en) 2010-07-19 2014-02-18 International Business Machines Corporation Method of fabricating isolated capacitors and structure thereof
US8232163B2 (en) 2010-11-01 2012-07-31 International Business Machines Corporation Lateral epitaxial grown SOI in deep trench structures and methods of manufacture
US8647945B2 (en) 2010-12-03 2014-02-11 International Business Machines Corporation Method of forming substrate contact for semiconductor on insulator (SOI) substrate
US9307701B2 (en) 2011-03-24 2016-04-12 Dirtt Environmental Solutions, Ltd Modular walls with incorporated planters
US9142508B2 (en) * 2011-06-27 2015-09-22 Tessera, Inc. Single exposure in multi-damascene process
US20130043559A1 (en) * 2011-08-17 2013-02-21 International Business Machines Corporation Trench formation in substrate
US8586444B2 (en) * 2012-03-23 2013-11-19 International Business Machines Corporation Creating deep trenches on underlying substrate
US8557657B1 (en) * 2012-05-18 2013-10-15 International Business Machines Corporation Retrograde substrate for deep trench capacitors
TW201403782A (zh) 2012-07-04 2014-01-16 財團法人工業技術研究院 基底穿孔的製造方法、矽穿孔結構及其電容控制方法
US8927989B2 (en) * 2012-11-28 2015-01-06 International Business Machines Corporation Voltage contrast inspection of deep trench isolation
US9412640B2 (en) 2013-01-25 2016-08-09 GlobalFoundries, Inc. Semiconductor device including substrate contact and related method
US9252242B2 (en) * 2013-03-25 2016-02-02 International Business Machines Corporation Semiconductor structure with deep trench thermal conduction
CN103456620B (zh) * 2013-09-11 2016-03-02 中微半导体设备(上海)有限公司 半导体结构的形成方法
ITUA20162174A1 (it) * 2016-03-31 2017-10-01 St Microelectronics Srl Procedimento di fabbricazione di un sensore di pressione mems e relativo sensore di pressione mems
US11121207B2 (en) * 2016-11-10 2021-09-14 Texas Instruments Incorporated Integrated trench capacitor with top plate having reduced voids
EP3828932B1 (en) * 2019-11-29 2022-09-07 Infineon Technologies Dresden GmbH & Co . KG Method for manufacturing a sensor device with a buried deep trench structure and sensor device
CN113497006B (zh) * 2020-03-20 2024-12-13 中芯国际集成电路制造(北京)有限公司 电容结构及其形成方法
US12015051B2 (en) * 2021-09-30 2024-06-18 Macom Technology Solutions Holdings, Inc. Semiconductor device and method of forming monolithic surge protection resistor
CN116544283B (zh) * 2023-04-28 2024-06-14 上海朗矽科技有限公司 嵌入式电容器及嵌入式电容器的制作方法

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JPH0563155A (ja) * 1991-08-30 1993-03-12 Texas Instr Japan Ltd 半導体装置及びその製造方法
JP3439493B2 (ja) * 1992-12-01 2003-08-25 沖電気工業株式会社 半導体記憶装置の製造方法
JP3301170B2 (ja) * 1993-08-09 2002-07-15 ソニー株式会社 半導体装置の製法
JPH08274276A (ja) * 1995-03-31 1996-10-18 Toshiba Corp 半導体装置およびその製造方法
US6387772B1 (en) 2000-04-25 2002-05-14 Agere Systems Guardian Corp. Method for forming trench capacitors in SOI substrates
JP2003007856A (ja) 2001-06-26 2003-01-10 Toshiba Corp 半導体装置及びその製造方法
US6870210B2 (en) * 2002-08-22 2005-03-22 Micron Technology, Inc. Dual-sided capacitor
DE10257873B3 (de) 2002-12-11 2004-06-17 Infineon Technologies Ag Dynamische Speicherzelle und Verfahren zur Herstellung derselben
US6964897B2 (en) * 2003-06-09 2005-11-15 International Business Machines Corporation SOI trench capacitor cell incorporating a low-leakage floating body array transistor
US7091081B2 (en) * 2004-05-21 2006-08-15 International Business Machines Corporation Method for patterning a semiconductor region

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI508265B (zh) * 2010-05-07 2015-11-11 Globalfoundries Us 2 Llc 用於ｅＤＲＡＭ之增強電容深溝渠電容器
TWI415264B (zh) * 2011-02-17 2013-11-11 Anpec Electronics Corp Dyed transistor with thick underlying dielectric layer and method for making the same
TWI578495B (zh) * 2011-03-11 2017-04-11 索泰克公司 製造半導體裝置之方法和製造晶圓的方法，及其半導體裝置和晶圓
US10043824B2 (en) 2016-12-15 2018-08-07 Vanguard International Semiconductor Corporation Semiconductor device including a vacuum gap and method for manufacturing the same

Also Published As

Publication number Publication date
US8053823B2 (en) 2011-11-08
CN1832183A (zh) 2006-09-13
US20060202249A1 (en) 2006-09-14
JP5137310B2 (ja) 2013-02-06
JP2006253684A (ja) 2006-09-21

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