JP5118614B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP5118614B2 JP5118614B2 JP2008309765A JP2008309765A JP5118614B2 JP 5118614 B2 JP5118614 B2 JP 5118614B2 JP 2008309765 A JP2008309765 A JP 2008309765A JP 2008309765 A JP2008309765 A JP 2008309765A JP 5118614 B2 JP5118614 B2 JP 5118614B2
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- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
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- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
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- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Description
11 p型シリコン基板
12 接続パッド
13 絶縁膜
14 保護膜
15 再配線
16 被覆膜
17 ポストバンプ(柱状の外部接続電極)
18 封止層
19 集積回路部
41 ドライフィルム
Claims (7)
- 複数の配線を備える集積回路部が形成された基板上に、前記集積回路部に電気的に接続された接続パッドを形成する接続パッド形成工程と、
前記接続パッドの一部を露出する接続パッド露出孔を有する絶縁膜及び保護膜を積層して形成する積層工程と、
前記接続パッド露出孔を充填し、且つ、前記保護膜の露出面の一部を覆う副配線を形成する副配線形成工程と、
前記副配線及び前記保護膜を覆う被覆膜を形成する被覆膜形成工程と、
前記被覆膜上にドライフィルムを貼り付けるドライフィルム貼り付け工程と、
前記被覆膜及び前記ドライフィルムを貫通し、前記副配線の一部を露出させる貫通孔を形成する貫通孔形成工程と、
前記貫通孔を充填する外部接続電極を形成する電極形成工程と、
前記ドライフィルムを除去し、前記被覆膜及び前記外部接続電極を覆う封止層を形成する封止層形成工程と、を有し、
前記副配線上に形成された前記被覆膜の膜厚が、前記副配線の膜厚よりも薄いことを特徴とする半導体装置の製造方法。 - 前記被覆膜形成工程は、液状樹脂を塗布して前記被覆膜を形成することを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記被覆膜形成工程は、前記液状樹脂をスピンコート法によって塗布することを特徴とする請求項2に記載の半導体装置の製造方法。
- 前記被覆膜は、ポリイミド系樹脂又はポリベンゾオキサゾール(PBO:Poly Benzo Oxysazole)系樹脂等の有機樹脂からなることを特徴とする請求項3に記載の半導体装置の製造方法。
- 前記被覆膜形成工程は、前記副配線の一部を露出する副配線露出孔を形成する副配線露出孔形成工程を含むことを特徴とする請求項1乃至4のいずれか1に記載の半導体装置の製造方法。
- 前記貫通孔形成工程は、前記副配線露出孔に連通する連通孔を前記ドライフィルムに形成することによって前記貫通孔を形成することを特徴とする請求項5に記載の半導体装置の製造方法。
- 前記被覆膜形成工程は、前記被覆膜を露光することで前記副配線露出孔を形成することを特徴とする請求項5又は6に記載の半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008309765A JP5118614B2 (ja) | 2008-12-04 | 2008-12-04 | 半導体装置の製造方法 |
US12/628,310 US7910478B2 (en) | 2008-12-04 | 2009-12-01 | Method of manufacturing semiconductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008309765A JP5118614B2 (ja) | 2008-12-04 | 2008-12-04 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010135554A JP2010135554A (ja) | 2010-06-17 |
JP5118614B2 true JP5118614B2 (ja) | 2013-01-16 |
Family
ID=42231561
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Application Number | Title | Priority Date | Filing Date |
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JP2008309765A Expired - Fee Related JP5118614B2 (ja) | 2008-12-04 | 2008-12-04 | 半導体装置の製造方法 |
Country Status (2)
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US (1) | US7910478B2 (ja) |
JP (1) | JP5118614B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014082359A (ja) * | 2012-10-17 | 2014-05-08 | Olympus Corp | 半導体基板、半導体装置、および固体撮像装置、並びに半導体基板の製造方法 |
US9449908B2 (en) | 2014-07-30 | 2016-09-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor package system and method |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3813367B2 (ja) * | 1998-12-22 | 2006-08-23 | 三洋電機株式会社 | 半導体装置およびその製造方法 |
JP2003318326A (ja) * | 2002-04-26 | 2003-11-07 | Sony Corp | 半導体装置とその製造方法 |
JP2004349610A (ja) * | 2003-05-26 | 2004-12-09 | Casio Comput Co Ltd | 半導体装置およびその製造方法 |
US7541275B2 (en) * | 2004-04-21 | 2009-06-02 | Texas Instruments Incorporated | Method for manufacturing an interconnect |
JP4949790B2 (ja) | 2006-09-26 | 2012-06-13 | 株式会社テラミクロス | 半導体装置の製造方法 |
JP2008244383A (ja) | 2007-03-29 | 2008-10-09 | Casio Comput Co Ltd | 半導体装置およびその製造方法 |
JP4413240B2 (ja) * | 2007-03-05 | 2010-02-10 | Okiセミコンダクタ株式会社 | 半導体装置の製造方法 |
-
2008
- 2008-12-04 JP JP2008309765A patent/JP5118614B2/ja not_active Expired - Fee Related
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2009
- 2009-12-01 US US12/628,310 patent/US7910478B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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JP2010135554A (ja) | 2010-06-17 |
US7910478B2 (en) | 2011-03-22 |
US20100144142A1 (en) | 2010-06-10 |
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