JP5112181B2 - 高解像度プラズマ・エッチング - Google Patents
高解像度プラズマ・エッチング Download PDFInfo
- Publication number
- JP5112181B2 JP5112181B2 JP2008153992A JP2008153992A JP5112181B2 JP 5112181 B2 JP5112181 B2 JP 5112181B2 JP 2008153992 A JP2008153992 A JP 2008153992A JP 2008153992 A JP2008153992 A JP 2008153992A JP 5112181 B2 JP5112181 B2 JP 5112181B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- particle beam
- mask
- ionized
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C21/00—Accessories or implements for use in connection with applying liquids or other fluent materials to surfaces, not provided for in groups B05C1/00 - B05C19/00
- B05C21/005—Masking devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00531—Dry etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
- B81C2201/013—Etching
- B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
- B81C2201/0143—Focussed beam, i.e. laser, ion or e-beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3174—Etching microareas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3174—Etching microareas
- H01J2237/31742—Etching microareas for repairing masks
- H01J2237/31744—Etching microareas for repairing masks introducing gas in vicinity of workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31749—Focused ion beam
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/766,680 | 2007-06-21 | ||
| US11/766,680 US8303833B2 (en) | 2007-06-21 | 2007-06-21 | High resolution plasma etch |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009004778A JP2009004778A (ja) | 2009-01-08 |
| JP2009004778A5 JP2009004778A5 (enExample) | 2011-07-21 |
| JP5112181B2 true JP5112181B2 (ja) | 2013-01-09 |
Family
ID=39828422
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008153992A Active JP5112181B2 (ja) | 2007-06-21 | 2008-06-12 | 高解像度プラズマ・エッチング |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US8303833B2 (enExample) |
| EP (1) | EP2006249A3 (enExample) |
| JP (1) | JP5112181B2 (enExample) |
Families Citing this family (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1501115B1 (en) | 2003-07-14 | 2009-07-01 | FEI Company | Dual beam system |
| US20110163068A1 (en) * | 2008-01-09 | 2011-07-07 | Mark Utlaut | Multibeam System |
| US8168961B2 (en) * | 2008-11-26 | 2012-05-01 | Fei Company | Charged particle beam masking for laser ablation micromachining |
| US8778804B2 (en) * | 2009-01-30 | 2014-07-15 | Fei Company | High selectivity, low damage electron-beam delineation etch |
| EP2226830B1 (en) * | 2009-03-06 | 2014-01-08 | FEI Company | Charged particle beam processing |
| EP2233907A1 (en) * | 2009-03-27 | 2010-09-29 | FEI Company | Forming an image while milling a work piece |
| JP5702552B2 (ja) | 2009-05-28 | 2015-04-15 | エフ イー アイ カンパニFei Company | デュアルビームシステムの制御方法 |
| EP2471086B1 (en) | 2009-08-28 | 2013-12-11 | FEI Company | Pattern modification schemes for improved fib patterning |
| US8617668B2 (en) * | 2009-09-23 | 2013-12-31 | Fei Company | Method of using nitrogen based compounds to reduce contamination in beam-induced thin film deposition |
| US8253118B2 (en) * | 2009-10-14 | 2012-08-28 | Fei Company | Charged particle beam system having multiple user-selectable operating modes |
| EP2341525B1 (en) | 2009-12-30 | 2013-10-23 | FEI Company | Plasma source for charged particle beam system |
| US8642974B2 (en) | 2009-12-30 | 2014-02-04 | Fei Company | Encapsulation of electrodes in solid media for use in conjunction with fluid high voltage isolation |
| US8987678B2 (en) | 2009-12-30 | 2015-03-24 | Fei Company | Encapsulation of electrodes in solid media |
| KR101854287B1 (ko) * | 2010-04-07 | 2018-05-03 | 에프이아이 컴파니 | 레이저 및 하전 입자 빔 시스템 결합 |
| EP2492950B1 (en) | 2011-02-25 | 2018-04-11 | FEI Company | Method for rapid switching between a high current mode and a low current mode in a charged particle beam system |
| US9721754B2 (en) | 2011-04-26 | 2017-08-01 | Carl Zeiss Smt Gmbh | Method and apparatus for processing a substrate with a focused particle beam |
| US20130098871A1 (en) | 2011-10-19 | 2013-04-25 | Fei Company | Internal Split Faraday Shield for an Inductively Coupled Plasma Source |
| US9443697B2 (en) * | 2012-01-31 | 2016-09-13 | Fei Company | Low energy ion beam etch |
| WO2014022429A1 (en) * | 2012-07-30 | 2014-02-06 | Fei Company | Environmental sem gas injection system |
| US9655223B2 (en) * | 2012-09-14 | 2017-05-16 | Oregon Physics, Llc | RF system, magnetic filter, and high voltage isolation for an inductively coupled plasma ion source |
| US9741536B2 (en) * | 2012-10-05 | 2017-08-22 | Fei Company | High aspect ratio structure analysis |
| WO2014078800A1 (en) * | 2012-11-16 | 2014-05-22 | Dmitri Litvinov | System and method for selectively removing atoms |
| US10103008B2 (en) | 2016-01-12 | 2018-10-16 | Fei Company | Charged particle beam-induced etching |
| DE102016203094B4 (de) | 2016-02-26 | 2022-02-10 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtung zum dauerhaften Reparieren von Defekten fehlenden Materials einer photolithographischen Maske |
| US10549386B2 (en) * | 2016-02-29 | 2020-02-04 | Xerox Corporation | Method for ablating openings in unsupported layers |
| EP3285278A1 (en) * | 2016-08-16 | 2018-02-21 | FEI Company | Magnet used with a plasma cleaner |
| US10684407B2 (en) * | 2017-10-30 | 2020-06-16 | Facebook Technologies, Llc | Reactivity enhancement in ion beam etcher |
| JP7285251B2 (ja) * | 2017-10-30 | 2023-06-01 | メタ プラットフォームズ テクノロジーズ, リミテッド ライアビリティ カンパニー | 高屈折率材料のh2補助傾斜エッチング |
| US10845596B2 (en) | 2018-01-23 | 2020-11-24 | Facebook Technologies, Llc | Slanted surface relief grating for rainbow reduction in waveguide display |
| US10914954B2 (en) | 2018-08-03 | 2021-02-09 | Facebook Technologies, Llc | Rainbow reduction for waveguide displays |
| US10761330B2 (en) | 2018-01-23 | 2020-09-01 | Facebook Technologies, Llc | Rainbow reduction in waveguide displays |
| US10649119B2 (en) | 2018-07-16 | 2020-05-12 | Facebook Technologies, Llc | Duty cycle, depth, and surface energy control in nano fabrication |
| US11137536B2 (en) | 2018-07-26 | 2021-10-05 | Facebook Technologies, Llc | Bragg-like gratings on high refractive index material |
| US11150394B2 (en) | 2019-01-31 | 2021-10-19 | Facebook Technologies, Llc | Duty cycle range increase for waveguide combiners |
| US11550083B2 (en) | 2019-06-26 | 2023-01-10 | Meta Platforms Technologies, Llc | Techniques for manufacturing slanted structures |
| CN110921613B (zh) * | 2019-11-21 | 2023-06-27 | 武汉大学 | 电磁场控制等离子体的激光掩膜刻蚀方法以及系统 |
| US11226446B2 (en) | 2020-05-06 | 2022-01-18 | Facebook Technologies, Llc | Hydrogen/nitrogen doping and chemically assisted etching of high refractive index gratings |
| CN112591707B (zh) * | 2020-12-15 | 2024-05-31 | 南方科技大学 | 一种纳米锥形阵列结构及其制备方法 |
| WO2024223248A1 (en) * | 2023-04-27 | 2024-10-31 | Carl Zeiss Smt Gmbh | Remote-plasma electron-induced mask repair |
| US20250210361A1 (en) * | 2023-12-22 | 2025-06-26 | Applied Materials, Inc. | Electron-Stimulated Etching of Silicon |
| EP4567872A3 (en) * | 2025-04-09 | 2025-11-12 | ASML Netherlands B.V. | Material removal apparatus and methods of removing material from an object support |
Family Cites Families (48)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59104287A (ja) | 1982-12-07 | 1984-06-16 | Sumitomo Electric Ind Ltd | レ−ザ加工法 |
| JPS59132132A (ja) | 1983-01-17 | 1984-07-30 | Mitsubishi Electric Corp | 微細パタ−ンの形成方法 |
| JPS59168652A (ja) | 1983-03-16 | 1984-09-22 | Hitachi Ltd | 素子修正方法及びその装置 |
| US4859908A (en) | 1986-09-24 | 1989-08-22 | Matsushita Electric Industrial Co., Ltd. | Plasma processing apparatus for large area ion irradiation |
| US4737637A (en) | 1986-10-15 | 1988-04-12 | Hughes Aircraft Company | Mass separator for ionized cluster beam |
| US4740267A (en) | 1987-02-20 | 1988-04-26 | Hughes Aircraft Company | Energy intensive surface reactions using a cluster beam |
| US4856457A (en) | 1987-02-20 | 1989-08-15 | Hughes Aircraft Company | Cluster source for nonvolatile species, having independent temperature control |
| US4833319A (en) | 1987-02-27 | 1989-05-23 | Hughes Aircraft Company | Carrier gas cluster source for thermally conditioned clusters |
| US5221422A (en) | 1988-06-06 | 1993-06-22 | Digital Equipment Corporation | Lithographic technique using laser scanning for fabrication of electronic components and the like |
| JPH0262039A (ja) | 1988-08-29 | 1990-03-01 | Hitachi Ltd | 多層素子の微細加工方法およびその装置 |
| US4874459A (en) | 1988-10-17 | 1989-10-17 | The Regents Of The University Of California | Low damage-producing, anisotropic, chemically enhanced etching method and apparatus |
| DE4018954A1 (de) | 1989-06-15 | 1991-01-03 | Mitsubishi Electric Corp | Trockenaetzgeraet |
| JPH04272640A (ja) | 1991-02-26 | 1992-09-29 | Shimadzu Corp | 集束イオンビームエッチング装置 |
| US5188705A (en) | 1991-04-15 | 1993-02-23 | Fei Company | Method of semiconductor device manufacture |
| JP2694625B2 (ja) | 1991-07-05 | 1997-12-24 | 光技術研究開発株式会社 | 化合物半導体基体のエッチング方法および製造方法 |
| DE4200235C1 (enExample) | 1992-01-08 | 1993-05-06 | Hoffmeister, Helmut, Dr., 4400 Muenster, De | |
| JPH05315212A (ja) * | 1992-05-12 | 1993-11-26 | Jeol Ltd | 集束イオンビーム装置 |
| US5350480A (en) | 1993-07-23 | 1994-09-27 | Aspect International, Inc. | Surface cleaning and conditioning using hot neutral gas beam array |
| US5482802A (en) | 1993-11-24 | 1996-01-09 | At&T Corp. | Material removal with focused particle beams |
| WO1996000803A1 (en) | 1994-06-28 | 1996-01-11 | Fei Company | Charged particle deposition of electrically insulating films |
| JP3464320B2 (ja) | 1995-08-02 | 2003-11-10 | 株式会社荏原製作所 | 高速原子線を用いた加工方法及び加工装置 |
| US5573595A (en) | 1995-09-29 | 1996-11-12 | Lam Research Corporation | Methods and apparatus for generating plasma |
| US6017221A (en) | 1995-12-04 | 2000-01-25 | Flamm; Daniel L. | Process depending on plasma discharges sustained by inductive coupling |
| US5686796A (en) | 1995-12-20 | 1997-11-11 | International Business Machines Corporation | Ion implantation helicon plasma source with magnetic dipoles |
| JP2788436B2 (ja) | 1996-01-16 | 1998-08-20 | 技術研究組合新情報処理開発機構 | イオンビームエッチング装置 |
| TW403959B (en) | 1996-11-27 | 2000-09-01 | Hitachi Ltd | Plasma treatment device |
| US6042738A (en) | 1997-04-16 | 2000-03-28 | Micrion Corporation | Pattern film repair using a focused particle beam system |
| GB9714142D0 (en) | 1997-07-05 | 1997-09-10 | Surface Tech Sys Ltd | An arrangement for the feeding of RF power to one or more antennae |
| JPH11154479A (ja) | 1997-11-20 | 1999-06-08 | Hitachi Ltd | 2次電子画像検出方法及びその装置並びに集束荷電粒子ビームによる処理方法及びその装置 |
| EP0989595A3 (en) | 1998-09-18 | 2001-09-19 | Ims-Ionen Mikrofabrikations Systeme Gmbh | Device for processing a surface of a substrate |
| US6268608B1 (en) | 1998-10-09 | 2001-07-31 | Fei Company | Method and apparatus for selective in-situ etching of inter dielectric layers |
| US20010025826A1 (en) | 2000-02-28 | 2001-10-04 | Pierson Thomas E. | Dense-plasma etching of InP-based materials using chlorine and nitrogen |
| JP4364420B2 (ja) * | 2000-10-31 | 2009-11-18 | エスアイアイ・ナノテクノロジー株式会社 | 垂直エッジのサブミクロン貫通孔を形成する方法 |
| US6977386B2 (en) | 2001-01-19 | 2005-12-20 | Fei Company | Angular aperture shaped beam system and method |
| US6838380B2 (en) | 2001-01-26 | 2005-01-04 | Fei Company | Fabrication of high resistivity structures using focused ion beams |
| KR100444189B1 (ko) | 2001-03-19 | 2004-08-18 | 주성엔지니어링(주) | 유도결합 플라즈마 소스의 임피던스 정합 회로 |
| US6730237B2 (en) * | 2001-06-22 | 2004-05-04 | International Business Machines Corporation | Focused ion beam process for removal of copper |
| WO2003012551A1 (en) | 2001-07-27 | 2003-02-13 | Fei Company | Electron beam processing |
| US6768120B2 (en) | 2001-08-31 | 2004-07-27 | The Regents Of The University Of California | Focused electron and ion beam systems |
| JP2005174591A (ja) | 2003-12-08 | 2005-06-30 | Horon:Kk | 荷電粒子線装置および荷電粒子線像生成方法 |
| US7241361B2 (en) * | 2004-02-20 | 2007-07-10 | Fei Company | Magnetically enhanced, inductively coupled plasma source for a focused ion beam system |
| JP2006005110A (ja) | 2004-06-17 | 2006-01-05 | National Institute For Materials Science | 微細構造の作製方法及び作製装置 |
| EP1630849B1 (en) * | 2004-08-27 | 2011-11-02 | Fei Company | Localized plasma processing |
| JP5033314B2 (ja) | 2004-09-29 | 2012-09-26 | 株式会社日立ハイテクノロジーズ | イオンビーム加工装置及び加工方法 |
| US7670956B2 (en) | 2005-04-08 | 2010-03-02 | Fei Company | Beam-induced etching |
| JP5020483B2 (ja) | 2005-07-08 | 2012-09-05 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
| WO2008094297A2 (en) | 2006-07-14 | 2008-08-07 | Fei Company | A multi-source plasma focused ion beam system |
| US8835880B2 (en) * | 2006-10-31 | 2014-09-16 | Fei Company | Charged particle-beam processing using a cluster source |
-
2007
- 2007-06-21 US US11/766,680 patent/US8303833B2/en active Active
-
2008
- 2008-06-12 JP JP2008153992A patent/JP5112181B2/ja active Active
- 2008-06-20 EP EP08158646A patent/EP2006249A3/en not_active Ceased
-
2012
- 2012-11-05 US US13/669,195 patent/US20130192758A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009004778A (ja) | 2009-01-08 |
| EP2006249A3 (en) | 2010-06-16 |
| US8303833B2 (en) | 2012-11-06 |
| EP2006249A2 (en) | 2008-12-24 |
| US20080314871A1 (en) | 2008-12-25 |
| US20130192758A1 (en) | 2013-08-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5112181B2 (ja) | 高解像度プラズマ・エッチング | |
| JP5498655B2 (ja) | クラスタ源を使用する荷電粒子ビーム処理 | |
| US6926799B2 (en) | Etching apparatus using neutral beam | |
| US9909218B2 (en) | Beam-induced etching | |
| US6753538B2 (en) | Electron beam processing | |
| JP4073204B2 (ja) | エッチング方法 | |
| JP2003158099A5 (enExample) | ||
| CN112805812B (zh) | 在基板中形成斜角结构的方法及形成光学光栅的方法 | |
| TW202008431A (zh) | 用以圖案化三維結構的方法及裝置處理方法與設備 | |
| CN113403572A (zh) | 一种带电粒子束处理工件的方法与设备 | |
| Alkemade et al. | Deposition, milling, and etching with a focused helium ion beam | |
| Chen | Nearly Monoenergetic Positive Ion Beam with Self-Neutralized Space Charge Extracted from a Pulsed Plasma and Its Application | |
| EP4513527A2 (en) | Gas mediated secondary electron generation and collection enhancement for improved endpoint detection with noble ions for circuit edit within semiconductor wafers | |
| JPH0745595A (ja) | 半導体装置のパターニング方法 | |
| Cui | Nanofabrication by Focused Ion Beam | |
| Radelaar | Technology and fabrication of quantum devices: Submicron lithography and etching techniques | |
| US10207469B2 (en) | Systems and methods for rapidly fabricating nanopatterns in a parallel fashion over large areas | |
| Tian | Sub 10 nm nanopantography and nanopattern transfer using highly selective plasma etching | |
| Cui | Nanoscale Pattern Transfer | |
| JPH08241884A (ja) | 超微細加工法 | |
| Melngailis | Material Shaping by Ion and Electron Nanobeams | |
| JPS60165724A (ja) | ドライエツチング方法 | |
| Amirov et al. | Fabrication of 0.5-μm structures by dry electron lithography and anisotropic plasma etching | |
| JPH10274700A (ja) | 超微細加工方法 | |
| Cui | Nanofabrication by Ion Beam |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110603 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110603 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120425 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120501 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20120730 |
|
| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20120802 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120821 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20121002 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20121010 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20151019 Year of fee payment: 3 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 5112181 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |