JP5110821B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5110821B2
JP5110821B2 JP2006216585A JP2006216585A JP5110821B2 JP 5110821 B2 JP5110821 B2 JP 5110821B2 JP 2006216585 A JP2006216585 A JP 2006216585A JP 2006216585 A JP2006216585 A JP 2006216585A JP 5110821 B2 JP5110821 B2 JP 5110821B2
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Japan
Prior art keywords
region
conductive film
film
light
layer
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Expired - Fee Related
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JP2006216585A
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English (en)
Japanese (ja)
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JP2007072452A (ja
JP2007072452A5 (enExample
Inventor
英人 大沼
雅晴 永井
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2006216585A priority Critical patent/JP5110821B2/ja
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Publication of JP2007072452A5 publication Critical patent/JP2007072452A5/ja
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  • Liquid Crystal (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Thin Film Transistor (AREA)
JP2006216585A 2005-08-12 2006-08-09 半導体装置の作製方法 Expired - Fee Related JP5110821B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006216585A JP5110821B2 (ja) 2005-08-12 2006-08-09 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005234791 2005-08-12
JP2005234791 2005-08-12
JP2006216585A JP5110821B2 (ja) 2005-08-12 2006-08-09 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2007072452A JP2007072452A (ja) 2007-03-22
JP2007072452A5 JP2007072452A5 (enExample) 2009-09-17
JP5110821B2 true JP5110821B2 (ja) 2012-12-26

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ID=37933897

Family Applications (1)

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JP2006216585A Expired - Fee Related JP5110821B2 (ja) 2005-08-12 2006-08-09 半導体装置の作製方法

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JP (1) JP5110821B2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008140136A1 (en) * 2007-05-11 2008-11-20 Lg Micron Ltd. A half tone mask having multi-half permeation part and a method of manufacturing the same
CN101382728B (zh) * 2007-09-07 2010-07-28 北京京东方光电科技有限公司 灰阶掩膜版结构
CN101387825B (zh) * 2007-09-10 2011-04-06 北京京东方光电科技有限公司 补偿型灰阶掩膜版结构
JP4930324B2 (ja) 2007-10-29 2012-05-16 セイコーエプソン株式会社 薄膜トランジスタの製造方法
JP2009128558A (ja) * 2007-11-22 2009-06-11 Hoya Corp フォトマスク及びフォトマスクの製造方法、並びにパターン転写方法
JP5369501B2 (ja) * 2008-06-04 2013-12-18 セイコーエプソン株式会社 半導体装置の製造方法
TW201030451A (en) * 2008-09-30 2010-08-16 Hoya Corp Multi-tone photomask and method of manufacturing the same
JP4811520B2 (ja) 2009-02-20 2011-11-09 住友金属鉱山株式会社 半導体装置用基板の製造方法、半導体装置の製造方法、半導体装置用基板及び半導体装置
KR101669929B1 (ko) * 2010-06-10 2016-10-28 엘지디스플레이 주식회사 노광 마스크 및 이를 이용하여 패터닝되어 제조된 내로우 베젤의 씨오지 타입 액정표시장치
KR101794355B1 (ko) * 2011-06-23 2017-11-07 엘지디스플레이 주식회사 포토 마스크 및 이를 이용한 표시기판의 제조방법
JP6173049B2 (ja) * 2013-06-04 2017-08-02 三菱電機株式会社 表示パネル及びその製造方法、並びに、液晶表示パネル
WO2019082380A1 (ja) * 2017-10-27 2019-05-02 シャープ株式会社 グレイトーンマスク
CN113474830B (zh) * 2019-02-27 2023-04-18 夏普株式会社 显示装置及其制造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4954401B2 (ja) * 2000-08-11 2012-06-13 株式会社半導体エネルギー研究所 半導体装置の製造方法
JP2002131885A (ja) * 2000-10-23 2002-05-09 Hoya Corp グレートーンマスクの描画方法、及びグレートーンマスクの製造方法
JP2002217419A (ja) * 2001-01-23 2002-08-02 Hitachi Ltd 薄膜トランジスタ基板とその製法
JP4393290B2 (ja) * 2003-06-30 2010-01-06 Ｈｏｙａ株式会社 グレートーンマスクの製造方法及び薄膜トランジスタ基板の製造方法
JP4210166B2 (ja) * 2003-06-30 2009-01-14 Ｈｏｙａ株式会社 グレートーンマスクの製造方法
JP2005010814A (ja) * 2004-10-01 2005-01-13 Hoya Corp グレートーンマスク及びその製造方法

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Publication number Publication date
JP2007072452A (ja) 2007-03-22

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