JP5110821B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP5110821B2 JP5110821B2 JP2006216585A JP2006216585A JP5110821B2 JP 5110821 B2 JP5110821 B2 JP 5110821B2 JP 2006216585 A JP2006216585 A JP 2006216585A JP 2006216585 A JP2006216585 A JP 2006216585A JP 5110821 B2 JP5110821 B2 JP 5110821B2
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- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Thin Film Transistor (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
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| JP2006216585A JP5110821B2 (ja) | 2005-08-12 | 2006-08-09 | 半導体装置の作製方法 |
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| JP2006216585A JP5110821B2 (ja) | 2005-08-12 | 2006-08-09 | 半導体装置の作製方法 |
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| US8133641B2 (en) | 2007-05-11 | 2012-03-13 | Lg Innotek Co., Ltd. | Half tone mask having multi-half permeation part and a method of manufacturing the same |
| CN101382728B (zh) * | 2007-09-07 | 2010-07-28 | 北京京东方光电科技有限公司 | 灰阶掩膜版结构 |
| CN101387825B (zh) * | 2007-09-10 | 2011-04-06 | 北京京东方光电科技有限公司 | 补偿型灰阶掩膜版结构 |
| JP4930324B2 (ja) | 2007-10-29 | 2012-05-16 | セイコーエプソン株式会社 | 薄膜トランジスタの製造方法 |
| JP2009128558A (ja) * | 2007-11-22 | 2009-06-11 | Hoya Corp | フォトマスク及びフォトマスクの製造方法、並びにパターン転写方法 |
| JP5369501B2 (ja) * | 2008-06-04 | 2013-12-18 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
| TW201030451A (en) * | 2008-09-30 | 2010-08-16 | Hoya Corp | Multi-tone photomask and method of manufacturing the same |
| JP4811520B2 (ja) | 2009-02-20 | 2011-11-09 | 住友金属鉱山株式会社 | 半導体装置用基板の製造方法、半導体装置の製造方法、半導体装置用基板及び半導体装置 |
| KR101669929B1 (ko) * | 2010-06-10 | 2016-10-28 | 엘지디스플레이 주식회사 | 노광 마스크 및 이를 이용하여 패터닝되어 제조된 내로우 베젤의 씨오지 타입 액정표시장치 |
| KR101794355B1 (ko) * | 2011-06-23 | 2017-11-07 | 엘지디스플레이 주식회사 | 포토 마스크 및 이를 이용한 표시기판의 제조방법 |
| JP6173049B2 (ja) * | 2013-06-04 | 2017-08-02 | 三菱電機株式会社 | 表示パネル及びその製造方法、並びに、液晶表示パネル |
| WO2019082380A1 (ja) * | 2017-10-27 | 2019-05-02 | シャープ株式会社 | グレイトーンマスク |
| US12089444B2 (en) | 2019-02-27 | 2024-09-10 | Sharp Kabushiki Kaisha | Display device and method for manufacturing same |
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| JP4954401B2 (ja) * | 2000-08-11 | 2012-06-13 | 株式会社半導体エネルギー研究所 | 半導体装置の製造方法 |
| JP2002131885A (ja) * | 2000-10-23 | 2002-05-09 | Hoya Corp | グレートーンマスクの描画方法、及びグレートーンマスクの製造方法 |
| JP2002217419A (ja) * | 2001-01-23 | 2002-08-02 | Hitachi Ltd | 薄膜トランジスタ基板とその製法 |
| JP4393290B2 (ja) * | 2003-06-30 | 2010-01-06 | Ｈｏｙａ株式会社 | グレートーンマスクの製造方法及び薄膜トランジスタ基板の製造方法 |
| JP4210166B2 (ja) * | 2003-06-30 | 2009-01-14 | Ｈｏｙａ株式会社 | グレートーンマスクの製造方法 |
| JP2005010814A (ja) * | 2004-10-01 | 2005-01-13 | Hoya Corp | グレートーンマスク及びその製造方法 |
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