JP5106767B2 - 超高周波半導体素子 - Google Patents
超高周波半導体素子 Download PDFInfo
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- JP5106767B2 JP5106767B2 JP2005267652A JP2005267652A JP5106767B2 JP 5106767 B2 JP5106767 B2 JP 5106767B2 JP 2005267652 A JP2005267652 A JP 2005267652A JP 2005267652 A JP2005267652 A JP 2005267652A JP 5106767 B2 JP5106767 B2 JP 5106767B2
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- signal transmission
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- 239000004065 semiconductor Substances 0.000 title claims description 67
- 238000005259 measurement Methods 0.000 claims description 77
- 230000008054 signal transmission Effects 0.000 claims description 36
- 230000005540 biological transmission Effects 0.000 claims description 7
- 238000000034 method Methods 0.000 description 29
- 230000003071 parasitic effect Effects 0.000 description 16
- 239000000758 substrate Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Microwave Amplifiers (AREA)
Description
12、22 ドレイン電極
13、23 ソース電極
14 測定用ゲートパッド
15 測定用ドレインパッド
16、26 測定用ソースパッド
17 ゲート電極と測定用ゲートパッドとの連結部
18 ドレイン電極と測定用ドレインパッドとの連結部
24 ゲート拡張電極
25 ドレイン拡張電極
27 入力(ゲート)端測定浮標
28 出力(ドレイン)端測定浮標
31、41 信号の伝送線路
32、42 信号接地面
33、43 半導体基板
Claims (2)
- ゲート電極、ドレイン電極およびソース電極を備えた超高周波単一チップ集積回路の能動素子として用いられる超高周波半導体素子であって、
前記ゲート電極に接続される測定用のゲート拡張電極と、前記ドレイン電極に接続される測定用のドレイン拡張電極と、前記ソース電極に接続される測定用ソースパッドを備え、
前記ゲート拡張電極は、一端部が前記ゲート電極の一端部と連続的に連結され、他端部側に前記超高周波単一チップ集積回路の信号伝送線路に連続的に連結されるように該信号伝送線路の線幅と同じ幅の部分を有すると共に、前記一端部から前記信号伝送線路の線幅と同じ幅の部分に連結するテーパ状部分を有する形状に形成され、前記ドレイン拡張電極は、一端部が前記ドレイン電極の一端部と連続的に連結され、他端部側に前記超高周波単一チップ集積回路の信号伝送線路に連続的に連結されるように該信号伝送線路の線幅と同じ幅部分を有すると共に、前記一端部から前記信号伝送線路の線幅と同じ幅の部分の幅に連結するテーパ状部分を有する形状に形成され、前記測定用ソースパッドに、入力および出力基準点を示す測定浮標が設けられ、前記測定浮標が、前記超高周波単一チップ集積回路の前記能動素子の端部となる位置であって、該超高周波単一チップ集積回路の前記信号伝送線路が連結される位置に設けられている
ことを特徴とする超高周波半導体素子。 - 前記能動素子のゲート拡張電極およびドレイン拡張電極の平面的形状と段差形状が、超高周波単一チップ集積回路を構成する複数の能動素子を電気的に連結した場合、各能動素子間において使用周波数帯域の伝送線路インピーダンス整合が取れるように設定されたことを特徴とする請求項1記載の超高周波半導体素子。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2004-0075719 | 2004-09-22 | ||
KR1020040075719A KR100686438B1 (ko) | 2004-09-22 | 2004-09-22 | 초고주파 반도체 소자 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006093698A JP2006093698A (ja) | 2006-04-06 |
JP5106767B2 true JP5106767B2 (ja) | 2012-12-26 |
Family
ID=36234320
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005267652A Active JP5106767B2 (ja) | 2004-09-22 | 2005-09-14 | 超高周波半導体素子 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP5106767B2 (ja) |
KR (1) | KR100686438B1 (ja) |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62115783A (ja) * | 1985-11-14 | 1987-05-27 | Mitsubishi Electric Corp | 半導体装置 |
JPH02168632A (ja) * | 1988-09-14 | 1990-06-28 | Mitsubishi Electric Corp | 電界効果トランジスタ及び信号伝送線路 |
JPH04288860A (ja) * | 1991-03-18 | 1992-10-13 | Fujitsu Ltd | 高周波トランジスタ及びその実装方法 |
JPH09213759A (ja) * | 1996-01-30 | 1997-08-15 | Sony Corp | 半導体装置 |
JP2701825B2 (ja) * | 1996-02-13 | 1998-01-21 | 松下電器産業株式会社 | 高周波特性の測定方法 |
JPH1093111A (ja) * | 1997-06-13 | 1998-04-10 | Matsushita Electric Ind Co Ltd | 高周波半導体装置 |
KR100248415B1 (ko) * | 1997-12-17 | 2000-03-15 | 이계철 | 단일칩 마이크로웨이브 집적회로의 제조방법 |
JP2003007727A (ja) | 2001-06-22 | 2003-01-10 | Sanyo Electric Co Ltd | 化合物半導体装置 |
-
2004
- 2004-09-22 KR KR1020040075719A patent/KR100686438B1/ko active IP Right Grant
-
2005
- 2005-09-14 JP JP2005267652A patent/JP5106767B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
KR100686438B1 (ko) | 2007-02-23 |
KR20060026976A (ko) | 2006-03-27 |
JP2006093698A (ja) | 2006-04-06 |
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