JP5102879B2 - 大面積ナノパターン形成方法および装置 - Google Patents

大面積ナノパターン形成方法および装置 Download PDF

Info

Publication number
JP5102879B2
JP5102879B2 JP2010543093A JP2010543093A JP5102879B2 JP 5102879 B2 JP5102879 B2 JP 5102879B2 JP 2010543093 A JP2010543093 A JP 2010543093A JP 2010543093 A JP2010543093 A JP 2010543093A JP 5102879 B2 JP5102879 B2 JP 5102879B2
Authority
JP
Japan
Prior art keywords
cylinder
radiation
mask
substrate
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2010543093A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011526069A (ja
Inventor
ボリス コーブリン
イゴール ランダウ
ボリス ヴォルフ
Original Assignee
ローイス インコーポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ローイス インコーポレイテッド filed Critical ローイス インコーポレイテッド
Publication of JP2011526069A publication Critical patent/JP2011526069A/ja
Application granted granted Critical
Publication of JP5102879B2 publication Critical patent/JP5102879B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00—Moulds or cores; Details thereof or accessories therefor
    • B29C33/42—Moulds or cores; Details thereof or accessories therefor characterised by the shape of the moulding surface, e.g. ribs or grooves
    • B29C33/424—Moulding surfaces provided with means for marking or patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/24—Curved surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2010543093A 2008-01-22 2008-11-18 大面積ナノパターン形成方法および装置 Active JP5102879B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US1186108P 2008-01-22 2008-01-22
US61/011,861 2008-01-22
PCT/US2008/012901 WO2009094009A1 (en) 2008-01-22 2008-11-18 Large area nanopatterning method and apparatus

Publications (2)

Publication Number Publication Date
JP2011526069A JP2011526069A (ja) 2011-09-29
JP5102879B2 true JP5102879B2 (ja) 2012-12-19

Family

ID=40901352

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010543093A Active JP5102879B2 (ja) 2008-01-22 2008-11-18 大面積ナノパターン形成方法および装置

Country Status (10)

Country Link
EP (1) EP2238608A4 (ko)
JP (1) JP5102879B2 (ko)
KR (1) KR20110008159A (ko)
CN (2) CN101911249A (ko)
AU (1) AU2008348353A1 (ko)
CA (1) CA2709718A1 (ko)
MX (1) MX2010007954A (ko)
RU (1) RU2488188C2 (ko)
TW (1) TWI518027B (ko)
WO (1) WO2009094009A1 (ko)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2871366A1 (fr) 2004-06-09 2005-12-16 Ceravic Soc Par Actions Simpli Implant expansible prothetique osseux
WO2008153674A1 (en) 2007-06-09 2008-12-18 Boris Kobrin Method and apparatus for anisotropic etching
US8518633B2 (en) 2008-01-22 2013-08-27 Rolith Inc. Large area nanopatterning method and apparatus
US8192920B2 (en) 2008-04-26 2012-06-05 Rolith Inc. Lithography method
US8334217B2 (en) 2008-06-09 2012-12-18 Rolith Inc. Material deposition over template
CN101692151B (zh) * 2009-09-17 2011-12-28 复旦大学 一种基于软模板纳米压印技术的硅纳米线制作方法
AU2011205582A1 (en) * 2010-01-12 2012-08-30 Rolith, Inc. Nanopatterning method and apparatus
US9465296B2 (en) * 2010-01-12 2016-10-11 Rolith, Inc. Nanopatterning method and apparatus
CN101846880B (zh) * 2010-05-12 2012-05-30 上海交通大学 激发表面等离子体的纳米光刻方法
AT510217B1 (de) * 2010-08-13 2013-12-15 Hueck Folien Gmbh Verfahren zur partiellen mattierung von uv-lackschichten
CA2807639A1 (en) * 2010-08-23 2012-03-01 Rolith, Inc. Mask for near-field lithography and fabrication the same
US9187839B2 (en) * 2010-10-07 2015-11-17 Michael Sheehy Process for the manufacture of sealed anodized aluminum components
CN102169819B (zh) * 2011-01-14 2013-01-30 中国科学院物理研究所 一种制备纳米金属结构的方法
WO2013049367A2 (en) * 2011-09-30 2013-04-04 Rolith, Inc. Plasmonic lithography using phase mask
KR101260221B1 (ko) * 2011-12-01 2013-05-06 주식회사 엘지화학 마스크
WO2013158543A1 (en) * 2012-04-17 2013-10-24 The Regents Of The University Of Michigan Methods for making micro- and nano-scale conductive grids for transparent electrodes and polarizers by roll to roll optical lithography
US9481112B2 (en) 2013-01-31 2016-11-01 Metamaterial Technologies Usa, Inc. Cylindrical master mold assembly for casting cylindrical masks
CN104412165B (zh) * 2012-05-02 2018-06-19 超材料技术美国公司 圆筒形聚合物掩膜和制造方法
US20150336301A1 (en) 2012-05-02 2015-11-26 Rolith, Inc. Cylindrical polymer mask and method of fabrication
US9782917B2 (en) 2013-01-31 2017-10-10 Metamaterial Technologies Usa, Inc. Cylindrical master mold and method of fabrication
CN102759855A (zh) * 2012-07-17 2012-10-31 西安交通大学 一种单码道绝对式光栅尺辊压印模具制造方法
TWI474432B (zh) * 2012-11-15 2015-02-21 Lextar Electronics Corp 晶粒定位裝置、具有晶粒定位裝置的晶粒定位系統與發光二極體顯示板的晶粒定位方法
RU2593463C2 (ru) * 2013-12-23 2016-08-10 Станислав Викторович Хартов Способ получения проводящих сетчатых микро- и наноструктур и структура для его реализации
US9244356B1 (en) 2014-04-03 2016-01-26 Rolith, Inc. Transparent metal mesh and method of manufacture
KR101636696B1 (ko) 2014-05-23 2016-07-06 연세대학교 산학협력단 플렉서블 나노박막 광구조를 이용하는 가변 대면적 나노이미징 광학헤드 및 이미징 장치
WO2015183243A1 (en) 2014-05-27 2015-12-03 Rolith, Inc. Anti-counterfeiting features and methods of fabrication and detection
KR102252049B1 (ko) 2014-08-04 2021-05-18 삼성디스플레이 주식회사 노광용 마스크, 이의 제조 방법 및 이를 이용한 기판의 제조 방법
KR102240761B1 (ko) 2015-01-29 2021-04-15 삼성디스플레이 주식회사 가변 마스크
JP6808155B2 (ja) * 2015-08-19 2021-01-06 国立大学法人 東京大学 母型の製造方法
TWI579640B (zh) * 2015-10-15 2017-04-21 許銘案 薄膜光罩、貼合輔具、貼合與曝光輔助裝置及將一薄膜光罩貼合於一曲面基板的方法
CN106773531B (zh) * 2017-01-03 2020-06-16 京东方科技集团股份有限公司 一种纳米压印装置中的压印滚轮及纳米压印装置
CN106547044B (zh) * 2017-01-24 2019-03-01 深圳市华星光电技术有限公司 一种偏光片的加工设备及制造方法
CN106647192A (zh) * 2017-03-10 2017-05-10 深圳市华星光电技术有限公司 曝光设备
TWI694605B (zh) * 2017-08-07 2020-05-21 財團法人工業技術研究院 元件擴距轉移方法及實施此轉移方法的設備
CN109901362B (zh) * 2017-12-11 2022-04-19 中国科学院光电技术研究所 二次成像光学光刻方法和设备
WO2019130221A1 (en) * 2017-12-29 2019-07-04 3M Innovative Properties Company Nonplanar patterned nanostructured surface and printing methods for making thereof
KR102096606B1 (ko) * 2018-08-29 2020-04-02 부산대학교 산학협력단 실린더 표면의 나노구조 임프린트를 위한 소프트 몰드 제조 및 이를 이용한 나노임프린트 공정 방법
GB2576922B (en) * 2018-09-06 2021-10-27 Stensborg As An optical engine for an imprinter
CN109668631B (zh) * 2018-12-11 2021-06-01 中国科学院光电技术研究所 一种大面积、低成本的超导纳米线单光子探测器的制备方法
CN111807320B (zh) * 2019-04-10 2024-07-09 青岛九环新越新能源科技股份有限公司 用于轧制纳米尺度孔结构材料的轧辊及轧辊组和轧制生产线
TWI765276B (zh) * 2020-06-12 2022-05-21 光群雷射科技股份有限公司 透鏡的轉印式製造方法及透鏡轉印層的製造方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59200419A (ja) * 1983-04-28 1984-11-13 Toshiba Corp 大面積露光装置
DE69405451T2 (de) * 1993-03-16 1998-03-12 Koninkl Philips Electronics Nv Verfahren und Vorrichtung zur Herstellung eines strukturierten Reliefbildes aus vernetztem Photoresist auf einer flachen Substratoberfläche
WO1997012279A1 (en) * 1995-09-29 1997-04-03 Sage Technology, Incorporated Optical digital media recording and reproduction system
US5865978A (en) * 1997-05-09 1999-02-02 Cohen; Adam E. Near-field photolithographic masks and photolithography; nanoscale patterning techniques; apparatus and method therefor
US5928815A (en) * 1997-11-14 1999-07-27 Martin; Joseph Proximity masking device for near-field optical lithography
DE19826971C2 (de) * 1998-06-18 2002-03-14 Reiner Goetzen Verfahren zum mechanischen und elektrischen Verbinden von Systembauteilen
US20030129545A1 (en) * 2001-06-29 2003-07-10 Kik Pieter G Method and apparatus for use of plasmon printing in near-field lithography
CA2380114C (en) * 2002-04-04 2010-01-19 Obducat Aktiebolag Imprint method and device
DE10217151A1 (de) * 2002-04-17 2003-10-30 Clariant Gmbh Nanoimprint-Resist
RU2214359C1 (ru) * 2002-09-05 2003-10-20 Санкт-Петербургский государственный институт точной механики и оптики (технический университет) Способ формирования решетки нанокластеров кремния на структурированной подложке
KR100756104B1 (ko) * 2003-01-17 2007-09-05 미크로텍 게젤샤프트 퓌어 미크로테흐놀로기 엠베하 마이크로시스템 제조 방법
JP4572406B2 (ja) * 2004-04-16 2010-11-04 独立行政法人理化学研究所 リソグラフィーマスク
CN100492588C (zh) * 2004-05-21 2009-05-27 Jsr株式会社 浸液曝光用液体以及浸液曝光方法
JP2006013216A (ja) * 2004-06-28 2006-01-12 Canon Inc 近接場露光によるレジストパターンの形成方法、及び該レジストパターンの形成方法を用いた基板の加工方法、デバイスの作製方法
JP2006073784A (ja) * 2004-09-02 2006-03-16 Ricoh Co Ltd フォトマスク、露光装置及び露光方法
JP4674105B2 (ja) * 2005-03-25 2011-04-20 独立行政法人科学技術振興機構 回路パターン転写装置及び方法
JP4246174B2 (ja) * 2005-04-01 2009-04-02 独立行政法人科学技術振興機構 ナノインプリント方法及び装置
US7274998B2 (en) * 2005-09-30 2007-09-25 Intel Corporation Near-field photo-lithography using nano light emitting diodes
US20070116831A1 (en) * 2005-11-23 2007-05-24 The Coca-Cola Company Dental Composition with High-Potency Sweetener
US20070138699A1 (en) * 2005-12-21 2007-06-21 Asml Netherlands B.V. Imprint lithography
US20070200276A1 (en) * 2006-02-24 2007-08-30 Micron Technology, Inc. Method for rapid printing of near-field and imprint lithographic features
JP2007329214A (ja) * 2006-06-07 2007-12-20 Canon Inc 近接場露光方法
JP2008021869A (ja) * 2006-07-13 2008-01-31 Ricoh Co Ltd プラズモン共鳴リソグラフィおよびリソグラム
JP5570688B2 (ja) * 2007-06-28 2014-08-13 ピーエスフォー ルクスコ エスエイアールエル 微細レジストパターン形成方法及びナノインプリントモールド構造
JP4406452B2 (ja) * 2007-09-27 2010-01-27 株式会社日立製作所 ベルト状金型およびそれを用いたナノインプリント装置

Also Published As

Publication number Publication date
CN101911249A (zh) 2010-12-08
RU2010134893A (ru) 2012-02-27
TW200932666A (en) 2009-08-01
EP2238608A1 (en) 2010-10-13
TWI518027B (zh) 2016-01-21
CA2709718A1 (en) 2009-07-30
CN105171985A (zh) 2015-12-23
RU2488188C2 (ru) 2013-07-20
KR20110008159A (ko) 2011-01-26
MX2010007954A (es) 2010-11-05
JP2011526069A (ja) 2011-09-29
EP2238608A4 (en) 2012-02-22
AU2008348353A1 (en) 2009-07-30
WO2009094009A1 (en) 2009-07-30

Similar Documents

Publication Publication Date Title
JP5102879B2 (ja) 大面積ナノパターン形成方法および装置
US8518633B2 (en) Large area nanopatterning method and apparatus
US9465296B2 (en) Nanopatterning method and apparatus
US8182982B2 (en) Method and device for patterning a disk
JP6005117B2 (ja) 近接場リソグラフィのためのマスクの製造方法
KR101430849B1 (ko) 나노패터닝 방법 및 장치
US20120282554A1 (en) Large area nanopatterning method and apparatus
US20090001634A1 (en) Fine resist pattern forming method and nanoimprint mold structure
Huang et al. A review of the scalable nano-manufacturing technology for flexible devices
Cui et al. Nanofabrication by Replication
Cui et al. Nanofabrication by Replication
Paul The use of soft lithography to fabricate structures at the nanometer scale

Legal Events

Date Code Title Description
A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120403

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120703

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120904

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120928

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20151005

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 5102879

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250