JP5101605B2 - 相粉末及びその相粉末の製造方法 - Google Patents
相粉末及びその相粉末の製造方法 Download PDFInfo
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- JP5101605B2 JP5101605B2 JP2009512579A JP2009512579A JP5101605B2 JP 5101605 B2 JP5101605 B2 JP 5101605B2 JP 2009512579 A JP2009512579 A JP 2009512579A JP 2009512579 A JP2009512579 A JP 2009512579A JP 5101605 B2 JP5101605 B2 JP 5101605B2
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- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
Description
Ti3SiC2(s)→3TiC0.67(s)+Si(g)
Ti3SiC2(s)+(1/2)O2(g)→3TiC0.67(s)+SiO(g)
Aは、Cd、Al、Ga、In、Tl、Si、Ge、Sn、Pb、P、As及びSから選択され、
Mは、遷移金属であり、
Xは、B、C及びNから選択され、
nは、1、2または3に等しい整数であり、
ε1、ε2及びε3は、独立して0から0.2の範囲の数を表し、
500nm未満の平均粒径を有する粉末を提供する。
−定義された式の相を形成するように、分離形態、すなわち結合されていない形態、
−Mn+1±ε1A1±ε2Xn±ε3相を形成することなく、部分的に結合された形態、
−Mn+1±ε1A1±ε2Xn±ε3相の領域を有する部分的に結合された形態、または、
−Mn+1±ε1A1±ε2Xn±ε3相として完全に結合された形態、であってもよい。
−第1遷移系列は、スカンジウムから亜鉛までであり、
−第2遷移系列は、イットリウムからカドミウムまでであり、
−第3遷移系列は、ハフニウムから水銀までである。
−MがTiに対応する場合:Ti2AlC、Ti2AlN、Ti2InN、Ti2GeC、Ti2SC、Ti2GaN、Ti2InC、Ti2TlC、Ti2SnC、Ti2GaC、Ti2CdC、Ti2PbC;
−MがZrに対応する場合:Zr2InN、Zr2SnC、Zr2SC、Zr2InC、Zr2TlC、Zr2PbC、Zr2TlN;
−MがHfに対応する場合:Hf2PbC、Hf2InN、Hf2SnN、Hf2SnC、Hf2SC、Hf2TlC、Hf2InC;
−MがCrに対応する場合:Cr2GaC、Cr2AlC、Cr2GaN;
−MがVに対応する場合:V2AsC、V2AlC、V2PC、V2GaN、V2GaC、V2GeC;
−MがNbに対応する場合:Nb2AlC、Nb2GaC、Nb2AsC、Nb2SnC、Nb2PC、Nb2InC、Nb2SC;
−MがTaに対応する場合:Ta2AlC、Ta2GaC;
−MがMoに対応する場合:Mo2GaC。
(a)加熱なしで酸素がない状態で、Mの少なくとも1つの前駆体、Aの少なくとも1つの前駆体及びXの少なくとも1つの前駆体が共に混合される混合段階であって、前記前駆体が、気体、気体中における懸濁液中の固体、及び/又は、気体中における懸濁液中の液体である混合段階;
(b)段階(a)で得られる前記混合物が前記粉末を形成するために有効な温度まで加熱される加熱段階。
−第1のプレ成形体(プレコンパクト)が得られた後における、好ましくは500から1500MPaの範囲の圧力下で上記に定義されるこの粉末を圧縮する段階;
−好ましくはミクロンサイズの凝集体を得るためにこの第1のプレ成形体が破砕される破砕段階;
−第2のプレ成形体が得られた後における、好ましくは200から400MPaの範囲の圧力下で前記凝集体が室温で圧縮される圧縮段階;
−任意に、前記第2のプレ成形体に所定の形状を与えるためにそれが機械加工される機械加工段階;
−好ましくは1000から2000℃の範囲の温度、より好ましくは1000から1500℃の範囲の温度で、任意に0から200MPaの範囲の圧力下で前記第2のプレ成形体が焼結によって強化される強化段階。
これらの段階の全ては、酸素を避けて任意に実行される。
−マトリックス微粒子強化要素(例えば、数ミクロンから数十ミクロンまでの範囲の平均粒径を有するもの)が分散される、本発明の粉末から得られるマトリックスを含む複合材;
−一般的にランダム配列を有するマトリックスの短繊維(ウィスカーとも呼ばれ、一般的に長さが1cm未満)が強化要素として分散される、本発明の粉末から得られるマトリックスを含む複合材;
−本発明の粉末から得られるマトリックス及び強化要素としての長繊維を含む複合材。
長繊維は、一般的に、1cmから数センチメートルの範囲の長さを有する(または、それらが対象とするこの部品の大きさのオーダーの長さを有する)。それらは、複合材の形成の前に、プレフォームを形成してもよい。
−第1のプレ成形体が得られた後における、本発明による粉末が好ましくは500から1500MPaの範囲の圧力下で室温において圧縮される圧縮段階;
−好ましくはミクロンサイズの凝集体を得るためにこの第1のプレ成形体が破砕される破砕段階;
−前記凝集体がこの強化要素と混合される混合段階;
−第2のプレ成形体が得られた後における、好ましくは200から400MPaの範囲の圧力下で前記混合物が室温で圧縮される圧縮段階;
−任意に、前記第2のプレ成形体に所定の形状を与えるためにそれが機械加工される機械加工段階;
−好ましくは1000から2000℃の範囲の温度、より好ましくは1000から1500℃の範囲の温度で、任意に好ましくは0から200MPaの範囲の圧力下で前記第2のプレ成形体が焼結によって強化される強化段階。
これらの段階の全ては、好ましくは酸素を避けて行われる。
−任意に、分散剤及び/又は結合剤を用いて、任意に、あらゆる凝集体を分離するために前記懸濁液を超音波にさらすことによって、水媒体または有機媒体中で本発明に従って粉末を懸濁する段階;
−長繊維、場合によっては織り繊維からなるプレフォームを湿潤する段階であって、前記湿潤段階が電気泳動法によって又は圧力浸透によって行われる段階;
−湿潤後に得られる組立体を乾燥する段階;
−好ましくは1000から2000℃の範囲の温度、より好ましくは1000から1500℃で、任意に好ましくは0から200MPaの範囲の圧力において、乾燥後に得られる前記組立体を焼結によって強化する段階。
これらの段階の全ては、好ましくは酸素を避けて行われる。
この例は、図1に示される装置においてレーザー熱分解によるTi3SiC2粉末の調製を示す。
この例は、図1に示されるものと同様の装置においてレーザー熱分解によるTi2SnC粉末の調製を示す。
この例は、図1に示されるものと同様の装置においてレーザー熱分解によるTi4AlC3粉末の調製を示す。
2 不活性ガス注入口
3 蒸発器
5 レーザー熱分解反応器
7 排出口
Claims (30)
- それぞれの割合がn+1±ε1、1±ε2及びn±ε3である少なくとも1つの要素M、少なくとも1つの要素A及び少なくとも1つの要素Xを含む粉末であって、
Aは、Cd、Al、Ga、In、Tl、Si、Ge、Sn、Pb、P、As及びSから選択され、
Mは、遷移金属であり、
Xは、B、C及びNから選択され、
nは、1、2または3に等しい整数であり、
ε1、ε2及びε3は、独立して0から0.2の範囲の数を表し、
500nm未満の平均粒径を有する粉末。 - 100nm未満の平均粒径を有する、請求項1に記載の粉末。
- 10から200nmの範囲の平均粒径を有する、請求項1に記載の粉末。
- 10から50nmの範囲の平均粒径を有する、請求項1に記載の粉末。
- 前記要素M、A及びXは、それぞれ3、1及び2の割合である、請求項1から4の何れか一項に記載の粉末。
- Ti3SiC2、Ti3AlC2及びTi3GeC2から選択される相に対応する、請求項5に記載の粉末。
- Ti3SiC2相に対応する、請求項6に記載の粉末。
- 前記要素M、A及びXは、それぞれ2、2及び1の割合である、請求項1から4の何れか一項に記載の粉末。
- Ti2AlC、Ti2AlN、Ti2InN、Ti2GeC、Ti2SC、Ti2GaN、Ti2InC、Ti2TlC、Ti2SnC、Ti2GaC、Ti2CdC、Ti2PbC、Zr2InN、Zr2SnC、Zr2SC、Zr2InC、Zr2TlC、Zr2PbC、Zr2TlN、Hf2PbC、Hf2InN、Hf2SnN、Hf2SnC、Hf2SC、Hf2TlC、Hf2InC、Cr2GaC、Cr2AlC、Cr2GaN、V2AsC、V2AlC、V2PC、V2GaN、V2GaC、V2GeC、Nb2AlC、Nb2GaC、Nb2AsC、Nb2SnC、Nb2PC、Nb2InC、Nb2SC、Ta2AlC、Ta2GaC、Mo2GaC及びNb2SCから選択される相に対応する、請求項8に記載の粉末。
- 前記要素M、A及びXは、それぞれ4、1、3の割合である、請求項1から4の何れか一項に記載の粉末。
- Ti4AlN3及びTa4AlC3から選択される相に対応する、請求項10に記載の粉末。
- Mは、他の遷移金属または他の金属で部分的に置換され、及び/又は、Aは、請求項1に挙げられたAにおける代替物のリストに属する他の要素で部分的に置換され、及び/又は、Xは、請求項1に挙げられたXにおける代替物のリストに属する他の要素で部分的に置換される、請求項1に記載の粉末。
- (Ti、Zr)3SiC2、(Ti、Hf)3SiC2、(Ti、Hf)3(Si、Ge)C2、(Ti、Zr)3(Si、Ge)(C、N)2、(Ti、V)3SiC2、(Ti、V)3Si(C、N)2、Ti3(Si、Al)C2、(Ti、V)3(Si、Ge)(C、N)2、(Ti、V、Hf)3(Si、Ge)(C、N)2、(Ti、V、Hf)3(Si、Ge、Al)(C、N)2、(Nb、Ti)2AlC及びTiAlN0.5C0.5から選択される相に対応する、請求項12に記載の粉末。
- 焼結助剤をさらに含む、請求項1から13の何れか一項に記載の粉末。
- 請求項1に定義される粉末を製造する方法であって、
(a)加熱なしで酸素がない状態で、Mの少なくとも1つの前駆体、Aの少なくとも1つの前駆体及びXの少なくとも1つの前駆体が共に混合される混合段階であって、前記前駆体が、気体、気体中における懸濁液中の固体、及び/又は、気体中における懸濁液中の液体である混合段階と、
(b)段階(a)で得られる前記混合物が前記粉末を形成するために有効な温度まで加熱される加熱段階と、
を備える方法。 - 前記混合段階は、前記Mの前駆体を含む流れ、前記Aの前駆体を含む流れ、及び、前記Xの前駆体を含む流れから行われる、請求項15に記載の製造方法。
- 前記Mの前駆体は、Mのハロゲン化合物、Mのオキシハロゲン化合物、Mのカルボニル化合物、Mのオキシアルキル化合物及びMのボラン化合物から選択される、請求項15または16に記載の製造方法。
- 前記Aの前駆体は、Aのハロゲン化合物、Aのハロゲン化水素化合物及びアルキル化されたMの複合体から選択される、請求項15から17の何れか一項に記載の製造方法。
- 前記炭素の前駆体は、アセチレン(C2H2)及びエチレン(C2H4)から選択される、請求項15から18の何れか一項に記載の製造方法。
- 前記ボロンの前駆体は、ハロゲン化ホウ素及びボランから選択される、請求項15から19の何れか一項に記載の製造方法。
- 前記窒素の前駆体は、NH3である、請求項15から20の何れか一項に記載の製造方法。
- 段階(a)の前に、前記Mの前駆体がMのハロゲン化合物である場合に、前記対応するMのハロゲン化合物を得るために有効な温度でハロアシッドの存在下でMの金属粉末を加熱することにある、前記前駆体を用意する段階を備える、請求項15に記載の製造方法。
- 前記加熱段階は、プラズマを生成するために必要な温度または1000から2000℃の範囲の温度で行われる、請求項15から22の何れか一項に記載の製造方法。
- 請求項1から14の何れか一項に定義される粉末を圧縮する段階と、前記材料を強化するための焼結段階とを備える、ナノ構造化された単相材料の製造方法。
- 請求項24に定義される方法によって得ることができるナノ構造化された単相材料。
- 強化要素を有する、請求項1から14の何れか一項に定義される粉末を混合する段階及び焼結段階を含む、強化要素として微粒子強化要素及び/又は短繊維を有する複合材の製造方法。
- 前記強化要素は、炭素、炭化ケイ素(SiC)または他のセラミックの粒子または短繊維から選択される、請求項26に記載の製造方法。
- 請求項26及び27の何れかで定義される方法によって得ることができる複合材。
- 請求項1から14の何れか一項に定義される前記粉末を懸濁する段階、前記懸濁液を有する前記長繊維からなるプレフォームを浸透させる段階、及び、前記複合材を強化するための焼結段階を含む、強化要素として長繊維を有する複合材の製造方法。
- 請求項29に定義される方法によって得ることができる複合材。
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CN114480902B (zh) * | 2022-01-17 | 2023-04-28 | 东南大学 | 一种抑制max相中金属晶须生长的方法 |
CN114669747A (zh) * | 2022-03-21 | 2022-06-28 | 四川大学 | 以Cr、Zr或Nb为基的MnAlCn-1相粉末的制备方法 |
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US5942455A (en) * | 1995-11-14 | 1999-08-24 | Drexel University | Synthesis of 312 phases and composites thereof |
US6569397B1 (en) * | 2000-02-15 | 2003-05-27 | Tapesh Yadav | Very high purity fine powders and methods to produce such powders |
US6652967B2 (en) * | 2001-08-08 | 2003-11-25 | Nanoproducts Corporation | Nano-dispersed powders and methods for their manufacture |
US7384680B2 (en) * | 1997-07-21 | 2008-06-10 | Nanogram Corporation | Nanoparticle-based power coatings and corresponding structures |
US6461989B1 (en) * | 1999-12-22 | 2002-10-08 | Drexel University | Process for forming 312 phase materials and process for sintering the same |
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EP1448804B1 (en) * | 2001-11-30 | 2007-11-14 | Abb Ab | METHOD OF SYNTHESIZING A COMPOUND OF THE FORMULA M sb n+1 /sb AX sb n /sb , FILM OF THE COMPOUND AND ITS USE |
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US20040250334A1 (en) * | 2003-06-13 | 2004-12-16 | Tamer El-Raghy | Max phase glove and condom formers |
DE602004025136D1 (de) * | 2003-10-16 | 2010-03-04 | Abb Research Ltd | BESCHICHTUNGEN AUS M(n+1)AX(n)-MATERIAL FÜR ELEKTRISCHE KONTAKTELEMENTE |
JP2005281084A (ja) * | 2004-03-30 | 2005-10-13 | Tungaloy Corp | 焼結体およびその製造方法 |
JP2006001829A (ja) * | 2004-05-20 | 2006-01-05 | Japan Science & Technology Agency | チタン炭化物焼結体又はチタンシリコン炭化物焼結体、同製造方法、同加工方法又はコーティング方法及び同用基板 |
US7553564B2 (en) * | 2004-05-26 | 2009-06-30 | Honeywell International Inc. | Ternary carbide and nitride materials having tribological applications and methods of making same |
US7572313B2 (en) * | 2004-05-26 | 2009-08-11 | Drexel University | Ternary carbide and nitride composites having tribological applications and methods of making same |
JP4593173B2 (ja) * | 2004-05-26 | 2010-12-08 | 株式会社アライドマテリアル | ナノ粒径を備えた複合炭化物粉末およびその製造方法 |
US20060051281A1 (en) * | 2004-09-09 | 2006-03-09 | Bhabendra Pradhan | Metal carbides and process for producing same |
US7510760B2 (en) * | 2005-03-07 | 2009-03-31 | Boardof Trustees Of The University Of Arkansas | Nanoparticle compositions, coatings and articles made therefrom, methods of making and using said compositions, coatings and articles |
FR2901714B1 (fr) * | 2006-05-30 | 2008-09-05 | Commissariat Energie Atomique | Procede en phase gazeuse pour la production de particules nanometriques |
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KR20200142101A (ko) * | 2018-05-11 | 2020-12-21 | 엔테그리스, 아이엔씨. | 세라믹 재료 표면을 포함하는 몰드 및 관련된 몰드 제작 및 사용 방법 |
KR102411338B1 (ko) * | 2018-05-11 | 2022-06-22 | 엔테그리스, 아이엔씨. | 세라믹 재료 표면을 포함하는 몰드 및 관련된 몰드 제작 및 사용 방법 |
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WO2007138052A1 (fr) | 2007-12-06 |
US9023246B2 (en) | 2015-05-05 |
EP2038238B1 (fr) | 2011-12-14 |
EP2038238A1 (fr) | 2009-03-25 |
JP2009538814A (ja) | 2009-11-12 |
FR2901721A1 (fr) | 2007-12-07 |
ATE537129T1 (de) | 2011-12-15 |
CN101448760A (zh) | 2009-06-03 |
FR2901721B1 (fr) | 2008-08-22 |
US20100247910A1 (en) | 2010-09-30 |
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