JP5101061B2 - 相変化物質、それを含む相変化ｒａｍ並びに、その製造及び動作方法 - Google Patents

相変化物質、それを含む相変化ｒａｍ並びに、その製造及び動作方法 Download PDF

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JP5101061B2
JP5101061B2 JP2006211302A JP2006211302A JP5101061B2 JP 5101061 B2 JP5101061 B2 JP 5101061B2 JP 2006211302 A JP2006211302 A JP 2006211302A JP 2006211302 A JP2006211302 A JP 2006211302A JP 5101061 B2 JP5101061 B2 JP 5101061B2
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phase change
layer
lower electrode
change layer
electrode contact
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JP2007043176A (ja
JP2007043176A5 (enExample
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振瑞 盧
閏浩 姜
相睦 李
東碩 徐
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/861—Thermal details
    • H10N70/8613—Heating or cooling means other than resistive heating electrodes, e.g. heater in parallel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
JP2006211302A 2005-08-04 2006-08-02 相変化物質、それを含む相変化ｒａｍ並びに、その製造及び動作方法 Active JP5101061B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020050071482A KR100682969B1 (ko) 2005-08-04 2005-08-04 상변화 물질, 이를 포함하는 상변화 램과 이의 제조 및 동작 방법
KR10-2005-0071482 2005-08-04

Publications (3)

Publication Number Publication Date
JP2007043176A JP2007043176A (ja) 2007-02-15
JP2007043176A5 JP2007043176A5 (enExample) 2009-09-17
JP5101061B2 true JP5101061B2 (ja) 2012-12-19

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JP2006211302A Active JP5101061B2 (ja) 2005-08-04 2006-08-02 相変化物質、それを含む相変化ｒａｍ並びに、その製造及び動作方法

Country Status (4)

Country Link
US (1) US7956342B2 (enExample)
JP (1) JP5101061B2 (enExample)
KR (1) KR100682969B1 (enExample)
CN (1) CN1909239B (enExample)

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US7425735B2 (en) * 2003-02-24 2008-09-16 Samsung Electronics Co., Ltd. Multi-layer phase-changeable memory devices
US7688619B2 (en) 2005-11-28 2010-03-30 Macronix International Co., Ltd. Phase change memory cell and manufacturing method
US7459717B2 (en) * 2005-11-28 2008-12-02 Macronix International Co., Ltd. Phase change memory cell and manufacturing method
KR100919692B1 (ko) * 2006-04-27 2009-10-06 재단법인서울대학교산학협력재단 상변화 메모리 셀 및 그의 제조 방법
KR100814393B1 (ko) * 2007-03-21 2008-03-18 삼성전자주식회사 상변화 물질층 형성 방법 및 이를 이용한 상변화 메모리장치의 제조 방법
US7940552B2 (en) * 2007-04-30 2011-05-10 Samsung Electronics Co., Ltd. Multiple level cell phase-change memory device having pre-reading operation resistance drift recovery, memory systems employing such devices and methods of reading memory devices
KR101469831B1 (ko) * 2007-04-30 2014-12-09 삼성전자주식회사 향상된 읽기 성능을 갖는 멀티-레벨 상변환 메모리 장치 및그것의 읽기 방법
KR100914267B1 (ko) 2007-06-20 2009-08-27 삼성전자주식회사 가변저항 메모리 장치 및 그것의 형성방법
KR101308549B1 (ko) * 2007-07-12 2013-09-13 삼성전자주식회사 멀티-레벨 상변환 메모리 장치 및 그것의 쓰기 방법
KR101010169B1 (ko) * 2007-11-21 2011-01-20 주식회사 하이닉스반도체 상변화 메모리 장치 및 그 형성 방법
JP5225372B2 (ja) 2008-04-01 2013-07-03 株式会社東芝 情報記録再生装置
US8324605B2 (en) * 2008-10-02 2012-12-04 Macronix International Co., Ltd. Dielectric mesh isolated phase change structure for phase change memory
US8363463B2 (en) 2009-06-25 2013-01-29 Macronix International Co., Ltd. Phase change memory having one or more non-constant doping profiles
US8283650B2 (en) 2009-08-28 2012-10-09 International Business Machines Corporation Flat lower bottom electrode for phase change memory cell
US8012790B2 (en) * 2009-08-28 2011-09-06 International Business Machines Corporation Chemical mechanical polishing stop layer for fully amorphous phase change memory pore cell
US8283202B2 (en) * 2009-08-28 2012-10-09 International Business Machines Corporation Single mask adder phase change memory element
US20110049456A1 (en) * 2009-09-03 2011-03-03 Macronix International Co., Ltd. Phase change structure with composite doping for phase change memory
US8233317B2 (en) * 2009-11-16 2012-07-31 International Business Machines Corporation Phase change memory device suitable for high temperature operation
US8129268B2 (en) * 2009-11-16 2012-03-06 International Business Machines Corporation Self-aligned lower bottom electrode
US7943420B1 (en) * 2009-11-25 2011-05-17 International Business Machines Corporation Single mask adder phase change memory element
US8283198B2 (en) * 2010-05-10 2012-10-09 Micron Technology, Inc. Resistive memory and methods of processing resistive memory
US8426242B2 (en) 2011-02-01 2013-04-23 Macronix International Co., Ltd. Composite target sputtering for forming doped phase change materials
US8946666B2 (en) 2011-06-23 2015-02-03 Macronix International Co., Ltd. Ge-Rich GST-212 phase change memory materials
US8932901B2 (en) 2011-10-31 2015-01-13 Macronix International Co., Ltd. Stressed phase change materials
TWI549229B (zh) 2014-01-24 2016-09-11 旺宏電子股份有限公司 應用於系統單晶片之記憶體裝置內的多相變化材料
CN104347800B (zh) * 2014-09-17 2018-03-30 曲阜师范大学 一种相变存储器选通管及其存储单元
US9672906B2 (en) 2015-06-19 2017-06-06 Macronix International Co., Ltd. Phase change memory with inter-granular switching
CN105742490B (zh) * 2016-03-11 2018-09-07 中国科学院上海微系统与信息技术研究所 一种提高相变存储器数据保持力的相变材料层结构
KR102463036B1 (ko) * 2016-03-15 2022-11-03 삼성전자주식회사 반도체 메모리 소자 및 이의 제조 방법
KR102653147B1 (ko) 2018-08-21 2024-04-02 삼성전자주식회사 반도체 메모리 장치, 반도체 메모리 모듈 및 불휘발성 메모리를 액세스하는 방법
CN112840460A (zh) * 2021-01-14 2021-05-25 长江先进存储产业创新中心有限责任公司 相变存储单元及其制造方法

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KR100979710B1 (ko) * 2003-05-23 2010-09-02 삼성전자주식회사 반도체 메모리 소자 및 제조방법
US7893419B2 (en) * 2003-08-04 2011-02-22 Intel Corporation Processing phase change material to improve programming speed
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CN1326137C (zh) * 2004-11-10 2007-07-11 中国科学院上海微系统与信息技术研究所 可用于相变存储器多级存储的相变材料
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Also Published As

Publication number Publication date
CN1909239A (zh) 2007-02-07
JP2007043176A (ja) 2007-02-15
US20070029606A1 (en) 2007-02-08
KR20070016650A (ko) 2007-02-08
US7956342B2 (en) 2011-06-07
KR100682969B1 (ko) 2007-02-15
CN1909239B (zh) 2010-04-21

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