JP5096483B2 - 撮像素子トランスファゲートデバイスにおけるシリサイドストラップ - Google Patents

撮像素子トランスファゲートデバイスにおけるシリサイドストラップ Download PDF

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JP5096483B2
JP5096483B2 JP2009539352A JP2009539352A JP5096483B2 JP 5096483 B2 JP5096483 B2 JP 5096483B2 JP 2009539352 A JP2009539352 A JP 2009539352A JP 2009539352 A JP2009539352 A JP 2009539352A JP 5096483 B2 JP5096483 B2 JP 5096483B2
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region
gate
transfer gate
type material
silicide
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JP2010512004A5 (enExample
JP2010512004A (ja
Inventor
ダブリュ． アドキッソン，ジェイムズ
ジェイ． エリス−モナハン，ジョン
マイケル ガイダシュ，ロバート
ディー． ジャッフェ，マーク
ティー． ネルソン，エドワード
ジェイ． ラッセル，リチャード
ブイ． スタンキャンピアーノ，チャールズ
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International Business Machines Corp
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International Business Machines Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2009539352A 2006-12-01 2007-11-30 撮像素子トランスファゲートデバイスにおけるシリサイドストラップ Active JP5096483B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/565,801 2006-12-01
US11/565,801 US7675097B2 (en) 2006-12-01 2006-12-01 Silicide strapping in imager transfer gate device
PCT/US2007/024684 WO2008069994A2 (en) 2006-12-01 2007-11-30 Silicide strapping in imager transfer gate device

Publications (3)

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JP2010512004A JP2010512004A (ja) 2010-04-15
JP2010512004A5 JP2010512004A5 (enExample) 2011-01-20
JP5096483B2 true JP5096483B2 (ja) 2012-12-12

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US (2) US7675097B2 (enExample)
EP (1) EP2089905B1 (enExample)
JP (1) JP5096483B2 (enExample)
KR (1) KR101437194B1 (enExample)
CN (1) CN101281918B (enExample)
TW (1) TWI420659B (enExample)
WO (1) WO2008069994A2 (enExample)

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Also Published As

Publication number Publication date
TW200837941A (en) 2008-09-16
CN101281918B (zh) 2010-12-08
CN101281918A (zh) 2008-10-08
US8158453B2 (en) 2012-04-17
US20080128767A1 (en) 2008-06-05
WO2008069994A2 (en) 2008-06-12
US7675097B2 (en) 2010-03-09
KR20090087896A (ko) 2009-08-18
WO2008069994A3 (en) 2008-08-28
TWI420659B (zh) 2013-12-21
US20100136733A1 (en) 2010-06-03
EP2089905B1 (en) 2014-01-22
JP2010512004A (ja) 2010-04-15
KR101437194B1 (ko) 2014-09-03
EP2089905A2 (en) 2009-08-19

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