KR101437194B1 - Ａｐｓ 셀 구조물 및 그 형성 방법, ｃｍｏｓ 이미지 센서 어레이 및 카메라 디바이스 - Google Patents

Ａｐｓ 셀 구조물 및 그 형성 방법, ｃｍｏｓ 이미지 센서 어레이 및 카메라 디바이스 Download PDF

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KR101437194B1
KR101437194B1 KR1020097011278A KR20097011278A KR101437194B1 KR 101437194 B1 KR101437194 B1 KR 101437194B1 KR 1020097011278 A KR1020097011278 A KR 1020097011278A KR 20097011278 A KR20097011278 A KR 20097011278A KR 101437194 B1 KR101437194 B1 KR 101437194B1
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doped region
conductive
transfer gate
region
gate
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KR20090087896A (ko
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제임스 더블유 애드키슨
존 제이 엘리스-모나간
로버트 마이클 가이다쉬
마크 디 자페
에드워드 티 넬슨
리차드 제이 라셀
찰스 브이 스탠캠피아노
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인터내셔널 비지네스 머신즈 코포레이션
옴니비전 테크놀러지즈 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020097011278A 2006-12-01 2007-11-30 Ａｐｓ 셀 구조물 및 그 형성 방법, ｃｍｏｓ 이미지 센서 어레이 및 카메라 디바이스 Active KR101437194B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/565,801 2006-12-01
US11/565,801 US7675097B2 (en) 2006-12-01 2006-12-01 Silicide strapping in imager transfer gate device
PCT/US2007/024684 WO2008069994A2 (en) 2006-12-01 2007-11-30 Silicide strapping in imager transfer gate device

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KR20090087896A KR20090087896A (ko) 2009-08-18
KR101437194B1 true KR101437194B1 (ko) 2014-09-03

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US (2) US7675097B2 (enExample)
EP (1) EP2089905B1 (enExample)
JP (1) JP5096483B2 (enExample)
KR (1) KR101437194B1 (enExample)
CN (1) CN101281918B (enExample)
TW (1) TWI420659B (enExample)
WO (1) WO2008069994A2 (enExample)

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KR102089682B1 (ko) 2013-07-15 2020-03-16 삼성전자 주식회사 반도체 장치 및 이의 제조 방법
CN103456756A (zh) * 2013-09-26 2013-12-18 哈尔滨工程大学 一种有源像素结构及其制作方法
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JP5096483B2 (ja) 2012-12-12
EP2089905B1 (en) 2014-01-22
US7675097B2 (en) 2010-03-09
WO2008069994A3 (en) 2008-08-28
TWI420659B (zh) 2013-12-21
JP2010512004A (ja) 2010-04-15
CN101281918A (zh) 2008-10-08
TW200837941A (en) 2008-09-16
KR20090087896A (ko) 2009-08-18
EP2089905A2 (en) 2009-08-19
CN101281918B (zh) 2010-12-08
WO2008069994A2 (en) 2008-06-12
US20100136733A1 (en) 2010-06-03
US8158453B2 (en) 2012-04-17
US20080128767A1 (en) 2008-06-05

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