TWI420659B - 成像器轉移閘極裝置中之矽化物帶 - Google Patents
成像器轉移閘極裝置中之矽化物帶 Download PDFInfo
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- TWI420659B TWI420659B TW096145709A TW96145709A TWI420659B TW I420659 B TWI420659 B TW I420659B TW 096145709 A TW096145709 A TW 096145709A TW 96145709 A TW96145709 A TW 96145709A TW I420659 B TWI420659 B TW I420659B
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- 238000012546 transfer Methods 0.000 title claims description 104
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/565,801 US7675097B2 (en) | 2006-12-01 | 2006-12-01 | Silicide strapping in imager transfer gate device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200837941A TW200837941A (en) | 2008-09-16 |
| TWI420659B true TWI420659B (zh) | 2013-12-21 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096145709A TWI420659B (zh) | 2006-12-01 | 2007-11-30 | 成像器轉移閘極裝置中之矽化物帶 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US7675097B2 (enExample) |
| EP (1) | EP2089905B1 (enExample) |
| JP (1) | JP5096483B2 (enExample) |
| KR (1) | KR101437194B1 (enExample) |
| CN (1) | CN101281918B (enExample) |
| TW (1) | TWI420659B (enExample) |
| WO (1) | WO2008069994A2 (enExample) |
Families Citing this family (39)
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| WO2008056289A1 (en) * | 2006-11-06 | 2008-05-15 | Nxp B.V. | Method of manufacturing a fet gate |
| US7675097B2 (en) | 2006-12-01 | 2010-03-09 | International Business Machines Corporation | Silicide strapping in imager transfer gate device |
| KR100810423B1 (ko) * | 2006-12-27 | 2008-03-04 | 동부일렉트로닉스 주식회사 | 이미지 센서 및 이미지 센서의 제조 방법 |
| US20080217679A1 (en) * | 2007-03-08 | 2008-09-11 | Macronix International Co., Ltd. | Memory unit structure and operation method thereof |
| KR20090003854A (ko) * | 2007-07-05 | 2009-01-12 | 삼성전자주식회사 | 이미지 센서 및 그 제조 방법 |
| US8110465B2 (en) | 2007-07-30 | 2012-02-07 | International Business Machines Corporation | Field effect transistor having an asymmetric gate electrode |
| US7741217B2 (en) * | 2007-10-25 | 2010-06-22 | International Business Machines Corporation | Dual workfunction silicide diode |
| US8743247B2 (en) * | 2008-01-14 | 2014-06-03 | International Business Machines Corporation | Low lag transfer gate device |
| US8227844B2 (en) * | 2008-01-14 | 2012-07-24 | International Business Machines Corporation | Low lag transfer gate device |
| TWI347009B (en) * | 2008-02-04 | 2011-08-11 | Jack Kuo | Continuous multigate transistors |
| US20090261393A1 (en) * | 2008-04-18 | 2009-10-22 | United Microelectronics Corp. | Composite transfer gate and fabrication thereof |
| JP5091886B2 (ja) | 2009-02-13 | 2012-12-05 | 浜松ホトニクス株式会社 | イメージセンサ |
| JP5271104B2 (ja) | 2009-02-13 | 2013-08-21 | 浜松ホトニクス株式会社 | リニアイメージセンサ |
| US20100314667A1 (en) * | 2009-06-11 | 2010-12-16 | Omnivision Technologies, Inc. | Cmos pixel with dual-element transfer gate |
| US9000500B2 (en) | 2009-12-30 | 2015-04-07 | Omnivision Technologies, Inc. | Image sensor with doped transfer gate |
| US8299505B2 (en) | 2011-02-17 | 2012-10-30 | International Business Machines Corporation | Pixel sensor cell with a dual work function gate electode |
| CA2835870A1 (en) | 2011-05-12 | 2012-11-15 | Olive Medical Corporation | Pixel array area optimization using stacking scheme for hybrid image sensor with minimal vertical interconnects |
| US9070784B2 (en) | 2011-07-22 | 2015-06-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metal gate structure of a CMOS semiconductor device and method of forming the same |
| JP2013084834A (ja) * | 2011-10-12 | 2013-05-09 | Sharp Corp | 固体撮像素子及び固体撮像素子の製造方法 |
| US9698185B2 (en) * | 2011-10-13 | 2017-07-04 | Omnivision Technologies, Inc. | Partial buried channel transfer device for image sensors |
| US9000527B2 (en) | 2012-05-15 | 2015-04-07 | Apple Inc. | Gate stack with electrical shunt in end portion of gate stack |
| WO2014002365A1 (ja) * | 2012-06-26 | 2014-01-03 | パナソニック株式会社 | 固体撮像装置及びその製造方法 |
| CA2878512A1 (en) | 2012-07-26 | 2014-01-30 | Olive Medical Corporation | Camera system with minimal area monolithic cmos image sensor |
| US8809925B2 (en) * | 2012-10-11 | 2014-08-19 | Omnivision Technologies, Inc. | Partial buried channel transfer device in image sensors |
| US8912584B2 (en) * | 2012-10-23 | 2014-12-16 | Apple Inc. | PFET polysilicon layer with N-type end cap for electrical shunt |
| JP6433975B2 (ja) | 2013-03-15 | 2018-12-05 | デピュイ・シンセス・プロダクツ・インコーポレイテッド | 入力クロック及びデータ伝送クロックのない画像センサ同期 |
| EP2967286B1 (en) | 2013-03-15 | 2021-06-23 | DePuy Synthes Products, Inc. | Minimize image sensor i/o and conductor counts in endoscope applications |
| KR102089682B1 (ko) * | 2013-07-15 | 2020-03-16 | 삼성전자 주식회사 | 반도체 장치 및 이의 제조 방법 |
| CN103456756A (zh) * | 2013-09-26 | 2013-12-18 | 哈尔滨工程大学 | 一种有源像素结构及其制作方法 |
| US9526468B2 (en) | 2014-09-09 | 2016-12-27 | General Electric Company | Multiple frame acquisition for exposure control in X-ray medical imagers |
| JP6668600B2 (ja) * | 2015-03-19 | 2020-03-18 | セイコーエプソン株式会社 | 固体撮像素子及びその製造方法 |
| US10254389B2 (en) | 2015-11-06 | 2019-04-09 | Artilux Corporation | High-speed light sensing apparatus |
| US10418407B2 (en) | 2015-11-06 | 2019-09-17 | Artilux, Inc. | High-speed light sensing apparatus III |
| TWI724164B (zh) * | 2017-05-05 | 2021-04-11 | 聯華電子股份有限公司 | 半導體元件及其製作方法 |
| US11393867B2 (en) * | 2017-12-06 | 2022-07-19 | Facebook Technologies, Llc | Multi-photodiode pixel cell |
| CN113540142B (zh) * | 2018-02-23 | 2024-07-30 | 奥特逻科公司 | 光检测装置 |
| US11105928B2 (en) | 2018-02-23 | 2021-08-31 | Artilux, Inc. | Light-sensing apparatus and light-sensing method thereof |
| CN110108919A (zh) * | 2019-04-16 | 2019-08-09 | 天津大学 | 一种像素内PPD pinning电压的测量方法 |
| CN116670815A (zh) * | 2020-12-21 | 2023-08-29 | 索尼半导体解决方案公司 | 成像设备和电子设备 |
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| JP4847828B2 (ja) * | 2006-09-22 | 2011-12-28 | 旭化成エレクトロニクス株式会社 | Ｃｍｏｓイメージセンサの製造方法 |
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2006
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2007
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- 2007-11-30 WO PCT/US2007/024684 patent/WO2008069994A2/en not_active Ceased
- 2007-11-30 KR KR1020097011278A patent/KR101437194B1/ko active Active
- 2007-11-30 TW TW096145709A patent/TWI420659B/zh active
- 2007-11-30 JP JP2009539352A patent/JP5096483B2/ja active Active
- 2007-11-30 EP EP07867600.4A patent/EP2089905B1/en active Active
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2010
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Also Published As
| Publication number | Publication date |
|---|---|
| TW200837941A (en) | 2008-09-16 |
| CN101281918B (zh) | 2010-12-08 |
| CN101281918A (zh) | 2008-10-08 |
| US8158453B2 (en) | 2012-04-17 |
| US20080128767A1 (en) | 2008-06-05 |
| WO2008069994A2 (en) | 2008-06-12 |
| US7675097B2 (en) | 2010-03-09 |
| KR20090087896A (ko) | 2009-08-18 |
| WO2008069994A3 (en) | 2008-08-28 |
| US20100136733A1 (en) | 2010-06-03 |
| EP2089905B1 (en) | 2014-01-22 |
| JP2010512004A (ja) | 2010-04-15 |
| KR101437194B1 (ko) | 2014-09-03 |
| EP2089905A2 (en) | 2009-08-19 |
| JP5096483B2 (ja) | 2012-12-12 |
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