CN101281918B - 有源像素传感器单元结构及形成该结构的方法 - Google Patents

有源像素传感器单元结构及形成该结构的方法 Download PDF

Info

Publication number
CN101281918B
CN101281918B CN2007101869334A CN200710186933A CN101281918B CN 101281918 B CN101281918 B CN 101281918B CN 2007101869334 A CN2007101869334 A CN 2007101869334A CN 200710186933 A CN200710186933 A CN 200710186933A CN 101281918 B CN101281918 B CN 101281918B
Authority
CN
China
Prior art keywords
conductivity type
work function
conductor layer
doped region
transfer gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2007101869334A
Other languages
English (en)
Chinese (zh)
Other versions
CN101281918A (zh
Inventor
约翰·J.·埃利斯-莫纳罕
马克·D.·贾菲
理查德·J.·雷塞尔
詹姆士·W.·阿迪克森
爱德华·T.·纳尔逊
查尔斯·V.·斯坦堪匹阿诺
罗伯特·M.·格伊达施
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
United States Polytron Technologies Inc Howell
International Business Machines Corp
Original Assignee
Eastman Kodak Co
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co, International Business Machines Corp filed Critical Eastman Kodak Co
Publication of CN101281918A publication Critical patent/CN101281918A/zh
Application granted granted Critical
Publication of CN101281918B publication Critical patent/CN101281918B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN2007101869334A 2006-12-01 2007-11-15 有源像素传感器单元结构及形成该结构的方法 Active CN101281918B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/565,801 US7675097B2 (en) 2006-12-01 2006-12-01 Silicide strapping in imager transfer gate device
US11/565,801 2006-12-01

Publications (2)

Publication Number Publication Date
CN101281918A CN101281918A (zh) 2008-10-08
CN101281918B true CN101281918B (zh) 2010-12-08

Family

ID=39434223

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007101869334A Active CN101281918B (zh) 2006-12-01 2007-11-15 有源像素传感器单元结构及形成该结构的方法

Country Status (7)

Country Link
US (2) US7675097B2 (enExample)
EP (1) EP2089905B1 (enExample)
JP (1) JP5096483B2 (enExample)
KR (1) KR101437194B1 (enExample)
CN (1) CN101281918B (enExample)
TW (1) TWI420659B (enExample)
WO (1) WO2008069994A2 (enExample)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008056289A1 (en) * 2006-11-06 2008-05-15 Nxp B.V. Method of manufacturing a fet gate
US7675097B2 (en) 2006-12-01 2010-03-09 International Business Machines Corporation Silicide strapping in imager transfer gate device
KR100810423B1 (ko) * 2006-12-27 2008-03-04 동부일렉트로닉스 주식회사 이미지 센서 및 이미지 센서의 제조 방법
US20080217679A1 (en) * 2007-03-08 2008-09-11 Macronix International Co., Ltd. Memory unit structure and operation method thereof
KR20090003854A (ko) * 2007-07-05 2009-01-12 삼성전자주식회사 이미지 센서 및 그 제조 방법
US8110465B2 (en) * 2007-07-30 2012-02-07 International Business Machines Corporation Field effect transistor having an asymmetric gate electrode
US7741217B2 (en) * 2007-10-25 2010-06-22 International Business Machines Corporation Dual workfunction silicide diode
US8227844B2 (en) * 2008-01-14 2012-07-24 International Business Machines Corporation Low lag transfer gate device
US8743247B2 (en) * 2008-01-14 2014-06-03 International Business Machines Corporation Low lag transfer gate device
TWI347009B (en) * 2008-02-04 2011-08-11 Jack Kuo Continuous multigate transistors
US20090261393A1 (en) * 2008-04-18 2009-10-22 United Microelectronics Corp. Composite transfer gate and fabrication thereof
JP5091886B2 (ja) 2009-02-13 2012-12-05 浜松ホトニクス株式会社 イメージセンサ
JP5271104B2 (ja) 2009-02-13 2013-08-21 浜松ホトニクス株式会社 リニアイメージセンサ
US20100314667A1 (en) * 2009-06-11 2010-12-16 Omnivision Technologies, Inc. Cmos pixel with dual-element transfer gate
US9000500B2 (en) 2009-12-30 2015-04-07 Omnivision Technologies, Inc. Image sensor with doped transfer gate
US8299505B2 (en) 2011-02-17 2012-10-30 International Business Machines Corporation Pixel sensor cell with a dual work function gate electode
WO2012155142A1 (en) * 2011-05-12 2012-11-15 Olive Medical Corporation Pixel array area optimization using stacking scheme for hybrid image sensor with minimal vertical interconnects
US9070784B2 (en) * 2011-07-22 2015-06-30 Taiwan Semiconductor Manufacturing Company, Ltd. Metal gate structure of a CMOS semiconductor device and method of forming the same
JP2013084834A (ja) * 2011-10-12 2013-05-09 Sharp Corp 固体撮像素子及び固体撮像素子の製造方法
US9698185B2 (en) * 2011-10-13 2017-07-04 Omnivision Technologies, Inc. Partial buried channel transfer device for image sensors
US9000527B2 (en) 2012-05-15 2015-04-07 Apple Inc. Gate stack with electrical shunt in end portion of gate stack
WO2014002365A1 (ja) * 2012-06-26 2014-01-03 パナソニック株式会社 固体撮像装置及びその製造方法
BR112015001369A2 (pt) 2012-07-26 2017-07-04 Olive Medical Corp sistema de câmera com sensor de imagem cmos monolítico de área mínima
US8809925B2 (en) * 2012-10-11 2014-08-19 Omnivision Technologies, Inc. Partial buried channel transfer device in image sensors
US8912584B2 (en) * 2012-10-23 2014-12-16 Apple Inc. PFET polysilicon layer with N-type end cap for electrical shunt
WO2014145248A1 (en) 2013-03-15 2014-09-18 Olive Medical Corporation Minimize image sensor i/o and conductor counts in endoscope applications
CN105246394B (zh) 2013-03-15 2018-01-12 德普伊新特斯产品公司 无输入时钟和数据传输时钟的图像传感器同步
KR102089682B1 (ko) 2013-07-15 2020-03-16 삼성전자 주식회사 반도체 장치 및 이의 제조 방법
CN103456756A (zh) * 2013-09-26 2013-12-18 哈尔滨工程大学 一种有源像素结构及其制作方法
US9526468B2 (en) 2014-09-09 2016-12-27 General Electric Company Multiple frame acquisition for exposure control in X-ray medical imagers
JP6668600B2 (ja) * 2015-03-19 2020-03-18 セイコーエプソン株式会社 固体撮像素子及びその製造方法
US10418407B2 (en) 2015-11-06 2019-09-17 Artilux, Inc. High-speed light sensing apparatus III
US10254389B2 (en) 2015-11-06 2019-04-09 Artilux Corporation High-speed light sensing apparatus
TWI724164B (zh) * 2017-05-05 2021-04-11 聯華電子股份有限公司 半導體元件及其製作方法
US11393867B2 (en) * 2017-12-06 2022-07-19 Facebook Technologies, Llc Multi-photodiode pixel cell
US11105928B2 (en) 2018-02-23 2021-08-31 Artilux, Inc. Light-sensing apparatus and light-sensing method thereof
JP6975341B2 (ja) * 2018-02-23 2021-12-01 アーティラックス・インコーポレイテッド 光検出装置およびその光検出方法
CN110108919A (zh) * 2019-04-16 2019-08-09 天津大学 一种像素内PPD pinning电压的测量方法
JPWO2022137864A1 (enExample) * 2020-12-21 2022-06-30

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0798785A1 (en) * 1996-03-29 1997-10-01 STMicroelectronics S.r.l. High-voltage-resistant MOS transistor, and corresponding manufacturing process
CN1327269A (zh) * 2000-03-28 2001-12-19 株式会社东芝 固体摄像器件及其制造方法
CN1812138A (zh) * 2004-12-03 2006-08-02 国际商业机器公司 图象传感器以及形成有源像素传感器单元结构的方法
CN1839476A (zh) * 2003-06-25 2006-09-27 微米技术有限公司 定制图像传感器中的栅极功函数

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2817518B2 (ja) * 1991-06-21 1998-10-30 松下電器産業株式会社 半導体装置およびその製造方法
EP0936667A1 (en) * 1998-01-20 1999-08-18 Lucent Technologies Inc. Lattice matched barrier for dual doped polysilicon gates
US6333205B1 (en) 1999-08-16 2001-12-25 Micron Technology, Inc. CMOS imager with selectively silicided gates
JP4398917B2 (ja) 2000-03-28 2010-01-13 株式会社東芝 固体撮像装置及びその製造方法
WO2002013510A2 (en) * 2000-08-04 2002-02-14 Foveon, Inc. All-electronic high-resolution digital still camera
US6794252B2 (en) * 2001-09-28 2004-09-21 Texas Instruments Incorporated Method and system for forming dual work function gate electrodes in a semiconductor device
TWI296062B (en) * 2001-12-28 2008-04-21 Sanyo Electric Co Liquid crystal display device
US7064406B2 (en) 2003-09-03 2006-06-20 Micron Technology, Inc. Supression of dark current in a photosensor for imaging
US7205584B2 (en) 2003-12-22 2007-04-17 Micron Technology, Inc. Image sensor for reduced dark current
US7214575B2 (en) 2004-01-06 2007-05-08 Micron Technology, Inc. Method and apparatus providing CMOS imager device pixel with transistor having lower threshold voltage than other imager device transistors
JP2005260077A (ja) * 2004-03-12 2005-09-22 Matsushita Electric Ind Co Ltd 固体撮像素子ならびにその製造方法およびそれを用いたカメラ
JP4546201B2 (ja) * 2004-03-17 2010-09-15 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US7217968B2 (en) 2004-12-15 2007-05-15 International Business Machines Corporation Recessed gate for an image sensor
JP4533155B2 (ja) * 2005-01-12 2010-09-01 富士通セミコンダクター株式会社 半導体装置及びその製造方法
US7115924B1 (en) * 2005-06-03 2006-10-03 Avago Technologies Sensor Ip Pte. Ltd. Pixel with asymmetric transfer gate channel doping
JP4847828B2 (ja) * 2006-09-22 2011-12-28 旭化成エレクトロニクス株式会社 Ｃｍｏｓイメージセンサの製造方法
US7675097B2 (en) 2006-12-01 2010-03-09 International Business Machines Corporation Silicide strapping in imager transfer gate device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0798785A1 (en) * 1996-03-29 1997-10-01 STMicroelectronics S.r.l. High-voltage-resistant MOS transistor, and corresponding manufacturing process
CN1327269A (zh) * 2000-03-28 2001-12-19 株式会社东芝 固体摄像器件及其制造方法
CN1839476A (zh) * 2003-06-25 2006-09-27 微米技术有限公司 定制图像传感器中的栅极功函数
CN1812138A (zh) * 2004-12-03 2006-08-02 国际商业机器公司 图象传感器以及形成有源像素传感器单元结构的方法

Also Published As

Publication number Publication date
US20080128767A1 (en) 2008-06-05
WO2008069994A2 (en) 2008-06-12
EP2089905B1 (en) 2014-01-22
JP5096483B2 (ja) 2012-12-12
KR20090087896A (ko) 2009-08-18
JP2010512004A (ja) 2010-04-15
CN101281918A (zh) 2008-10-08
US20100136733A1 (en) 2010-06-03
US8158453B2 (en) 2012-04-17
US7675097B2 (en) 2010-03-09
EP2089905A2 (en) 2009-08-19
TW200837941A (en) 2008-09-16
WO2008069994A3 (en) 2008-08-28
TWI420659B (zh) 2013-12-21
KR101437194B1 (ko) 2014-09-03

Similar Documents

Publication Publication Date Title
CN101281918B (zh) 有源像素传感器单元结构及形成该结构的方法
US7459360B2 (en) Method of forming pixel sensor cell having reduced pinning layer barrier potential
US7888156B2 (en) Predoped transfer gate for a CMOS image sensor
US7217968B2 (en) Recessed gate for an image sensor
US7190041B2 (en) Well for CMOS imager
US7939867B2 (en) Complementary metal-oxide-semiconductor (CMOS) image sensor and fabricating method thereof
US9123606B2 (en) Pixel structures of CMOS imaging sensors
US7528427B2 (en) Pixel sensor cell having asymmetric transfer gate with reduced pinning layer barrier potential
KR20130007386A (ko) 후면 조명 센서를 위한 공동-주입
US20040089883A1 (en) CMOS image sensor and method of fabricating the same
CN101211834A (zh) 图像传感器和制造图像传感器的方法
US20070023796A1 (en) Pinning layer for pixel sensor cell and method thereof
CN106298818B (zh) 一种cmos图像传感器及其制作方法和操作方法
US7429496B2 (en) Buried photodiode for image sensor with shallow trench isolation technology
JP2008078489A (ja) Ｃｍｏｓイメージセンサおよびその製造方法
KR100535911B1 (ko) 시모스 이미지 센서 및 그 제조방법
CN118380446B (zh) 光电原位有源像素传感器及其制造方法
KR100607358B1 (ko) 시모스 이미지 센서의 제조방법

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20150914

Address after: American New York

Patentee after: International Business Machines Corp.

Patentee after: The United States Polytron Technologies Inc Howell

Address before: American New York

Patentee before: International Business Machines Corp.

Patentee before: Easman Kodak Co.