JP5094019B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5094019B2
JP5094019B2 JP2006012162A JP2006012162A JP5094019B2 JP 5094019 B2 JP5094019 B2 JP 5094019B2 JP 2006012162 A JP2006012162 A JP 2006012162A JP 2006012162 A JP2006012162 A JP 2006012162A JP 5094019 B2 JP5094019 B2 JP 5094019B2
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JP
Japan
Prior art keywords
insulating film
opening
conductive layer
film
substrate
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Expired - Fee Related
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JP2006012162A
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English (en)
Japanese (ja)
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JP2006229212A (ja
JP2006229212A5 (enExample
Inventor
秀明 桑原
裕子 山本
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2006012162A priority Critical patent/JP5094019B2/ja
Publication of JP2006229212A publication Critical patent/JP2006229212A/ja
Publication of JP2006229212A5 publication Critical patent/JP2006229212A5/ja
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  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
JP2006012162A 2005-01-21 2006-01-20 半導体装置の作製方法 Expired - Fee Related JP5094019B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006012162A JP5094019B2 (ja) 2005-01-21 2006-01-20 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005014756 2005-01-21
JP2005014756 2005-01-21
JP2006012162A JP5094019B2 (ja) 2005-01-21 2006-01-20 半導体装置の作製方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2010046235A Division JP2010166069A (ja) 2005-01-21 2010-03-03 半導体装置
JP2012116246A Division JP5463382B2 (ja) 2005-01-21 2012-05-22 半導体装置及びその作製方法

Publications (3)

Publication Number Publication Date
JP2006229212A JP2006229212A (ja) 2006-08-31
JP2006229212A5 JP2006229212A5 (enExample) 2009-02-12
JP5094019B2 true JP5094019B2 (ja) 2012-12-12

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JP2006012162A Expired - Fee Related JP5094019B2 (ja) 2005-01-21 2006-01-20 半導体装置の作製方法

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JP (1) JP5094019B2 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008113632A (ja) * 2006-11-07 2008-05-22 Hitachi Ltd 生体植込用ｒｆｉｄタグおよびその挿入冶具体
JP2008130866A (ja) * 2006-11-22 2008-06-05 Seiko Epson Corp 表面改質方法およびパターン形成方法
JP2008176009A (ja) 2007-01-18 2008-07-31 Seiko Epson Corp パターン形成方法
US7960261B2 (en) * 2007-03-23 2011-06-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing crystalline semiconductor film and method for manufacturing thin film transistor
US10231344B2 (en) 2007-05-18 2019-03-12 Applied Nanotech Holdings, Inc. Metallic ink
WO2009107548A1 (en) 2008-02-29 2009-09-03 Semiconductor Energy Laboratory Co., Ltd. Deposition method and manufacturing method of light-emitting device
US9730333B2 (en) 2008-05-15 2017-08-08 Applied Nanotech Holdings, Inc. Photo-curing process for metallic inks
KR101735710B1 (ko) 2009-03-27 2017-05-15 어플라이드 나노테크 홀딩스, 인크. 광 및／또는 레이저 소결을 향상시키기 위한 버퍼층
WO2011002046A1 (en) 2009-06-30 2011-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN111081550A (zh) 2009-06-30 2020-04-28 株式会社半导体能源研究所 用于制造半导体器件的方法及半导体器件
EP2449595B1 (en) 2009-06-30 2017-07-26 Semiconductor Energy Laboratory Co, Ltd. Method for manufacturing semiconductor device
KR101269812B1 (ko) * 2009-09-04 2013-05-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 표시 패널, 표시 모듈, 전자 기기 및 표시 장치
KR101585491B1 (ko) 2009-10-29 2016-01-15 삼성전자주식회사 도전 패턴 구조물 및 그 제조 방법
KR20120106766A (ko) 2009-11-20 2012-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
JP5848918B2 (ja) * 2010-09-03 2016-01-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5409759B2 (ja) * 2011-12-20 2014-02-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6175244B2 (ja) * 2012-02-09 2017-08-02 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP6100559B2 (ja) * 2012-03-05 2017-03-22 株式会社半導体エネルギー研究所 半導体記憶装置
TW201419315A (zh) 2012-07-09 2014-05-16 Applied Nanotech Holdings Inc 微米尺寸銅粒子的光燒結法
US8981564B2 (en) * 2013-05-20 2015-03-17 Invensas Corporation Metal PVD-free conducting structures
JP6410496B2 (ja) * 2013-07-31 2018-10-24 株式会社半導体エネルギー研究所 マルチゲート構造のトランジスタ
KR102320382B1 (ko) * 2015-01-28 2021-11-02 삼성디스플레이 주식회사 전자 장치
JP6864875B2 (ja) 2019-08-30 2021-04-28 日亜化学工業株式会社 発光モジュール及びその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59169154A (ja) * 1983-03-16 1984-09-25 Fujitsu Ltd 半導体装置の製造方法
JP2513279B2 (ja) * 1988-06-28 1996-07-03 日本電気株式会社 薄膜除去方法
JPH05160271A (ja) * 1991-12-03 1993-06-25 Mitsubishi Electric Corp 半導体装置
JP3484914B2 (ja) * 1997-03-10 2004-01-06 セイコーエプソン株式会社 半導体装置
KR100273703B1 (ko) * 1997-12-12 2001-03-02 윤종용 콘택관련 결함 및 콘택저항을 감소하기 위한 반도체 장치의 콘택구조 및 그 제조 방법
JP3919493B2 (ja) * 2001-10-01 2007-05-23 日東電工株式会社 プラスチック三次元回路素子及びその製造方法
CN100482355C (zh) * 2003-04-25 2009-04-29 株式会社半导体能源研究所 使用带电粒子束的液滴吐出装置及使用该装置的图案制作方法
JP2004363303A (ja) * 2003-06-04 2004-12-24 Toshiba Corp 半導体装置及びその製造方法

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JP2006229212A (ja) 2006-08-31

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