JP5093985B2 - 膜パターンの形成方法 - Google Patents

膜パターンの形成方法 Download PDF

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Publication number
JP5093985B2
JP5093985B2 JP2005007477A JP2005007477A JP5093985B2 JP 5093985 B2 JP5093985 B2 JP 5093985B2 JP 2005007477 A JP2005007477 A JP 2005007477A JP 2005007477 A JP2005007477 A JP 2005007477A JP 5093985 B2 JP5093985 B2 JP 5093985B2
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Japan
Prior art keywords
film
pattern
mask pattern
film pattern
forming
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Expired - Fee Related
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JP2005007477A
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English (en)
Japanese (ja)
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JP2005334864A5 (enExample
JP2005334864A (ja
Inventor
慎志 前川
厳 藤井
裕子 城口
将文 森末
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2005007477A priority Critical patent/JP5093985B2/ja
Publication of JP2005334864A publication Critical patent/JP2005334864A/ja
Publication of JP2005334864A5 publication Critical patent/JP2005334864A5/ja
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Publication of JP5093985B2 publication Critical patent/JP5093985B2/ja
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2005007477A 2004-01-16 2005-01-14 膜パターンの形成方法 Expired - Fee Related JP5093985B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005007477A JP5093985B2 (ja) 2004-01-16 2005-01-14 膜パターンの形成方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2004009232 2004-01-16
JP2004009232 2004-01-16
JP2004134898 2004-04-28
JP2004134898 2004-04-28
JP2005007477A JP5093985B2 (ja) 2004-01-16 2005-01-14 膜パターンの形成方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2009193830A Division JP5292224B2 (ja) 2004-01-16 2009-08-25 膜パターンの作製方法
JP2011029544A Division JP5298149B2 (ja) 2004-01-16 2011-02-15 パターン形成方法

Publications (3)

Publication Number Publication Date
JP2005334864A JP2005334864A (ja) 2005-12-08
JP2005334864A5 JP2005334864A5 (enExample) 2008-01-31
JP5093985B2 true JP5093985B2 (ja) 2012-12-12

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Family Applications (1)

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JP2005007477A Expired - Fee Related JP5093985B2 (ja) 2004-01-16 2005-01-14 膜パターンの形成方法

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JP (1) JP5093985B2 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8053171B2 (en) 2004-01-16 2011-11-08 Semiconductor Energy Laboratory Co., Ltd. Substrate having film pattern and manufacturing method of the same, manufacturing method of semiconductor device, liquid crystal television, and EL television
WO2007063966A1 (ja) 2005-12-02 2007-06-07 Idemitsu Kosan Co., Ltd. Ｔｆｔ基板及びｔｆｔ基板の製造方法
JP2008033284A (ja) * 2006-07-04 2008-02-14 Semiconductor Energy Lab Co Ltd 表示装置の作製方法
TWI427682B (zh) 2006-07-04 2014-02-21 半導體能源研究所股份有限公司 顯示裝置的製造方法
JP5110830B2 (ja) * 2006-08-31 2012-12-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100751382B1 (ko) * 2006-10-31 2007-08-22 삼성에스디아이 주식회사 유기 박막 트랜지스터 및 이를 구비한 유기 전계 발광디스플레이 장치
JP5019900B2 (ja) * 2007-02-08 2012-09-05 武蔵エンジニアリング株式会社 液体材料の充填方法、装置およびプログラム
JP2009072654A (ja) * 2007-09-19 2009-04-09 Seiko Epson Corp 膜パターン形成方法及び配線基板
US8083956B2 (en) * 2007-10-11 2011-12-27 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing display device
JP4661864B2 (ja) * 2007-12-25 2011-03-30 セイコーエプソン株式会社 膜パターン形成方法及び発光装置の製造方法
US20090283611A1 (en) * 2008-05-14 2009-11-19 General Electric Company Surface treatments and coatings for atomization
CN102224580B (zh) * 2008-11-28 2016-03-02 索尼公司 薄膜晶体管制造方法、薄膜晶体管以及电子装置
JP5651961B2 (ja) * 2010-02-03 2015-01-14 ソニー株式会社 薄膜トランジスタおよびその製造方法、ならびに電子機器
WO2012067060A1 (ja) * 2010-11-19 2012-05-24 シャープ株式会社 薄膜トランジスタの製造方法、および、それを用いて製造された薄膜トランジスタを含む表示装置
JP5598410B2 (ja) 2011-04-11 2014-10-01 大日本印刷株式会社 有機半導体素子の製造方法および有機半導体素子
JP5891952B2 (ja) 2012-05-29 2016-03-23 株式会社ジャパンディスプレイ 表示装置の製造方法
EP3140048A4 (en) * 2014-05-06 2017-12-20 Henkel IP & Holding GmbH Apparatus and method for applying multi-component adhesives using jetting valves
JP6528517B2 (ja) 2015-04-06 2019-06-12 三菱電機株式会社 配向膜の塗布方法
JP6671335B2 (ja) * 2017-12-28 2020-03-25 株式会社小森コーポレーション 機能性膜のパターニング方法、電子デバイスの製造方法
US11527701B2 (en) * 2019-10-28 2022-12-13 Taiwan Semiconductor Manufacturing Company, Ltd. Piezoelectric device and method of forming the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002237383A (ja) * 2000-03-31 2002-08-23 Seiko Epson Corp 有機ｅｌ素子の製造方法、有機ｅｌ素子
JP4035968B2 (ja) * 2000-06-30 2008-01-23 セイコーエプソン株式会社 導電膜パターンの形成方法
JP4000853B2 (ja) * 2000-12-28 2007-10-31 セイコーエプソン株式会社 分子膜パターンの形成方法、分子膜パターン、及び半導体装置の製造方法
JP2003124215A (ja) * 2001-10-15 2003-04-25 Seiko Epson Corp パターン形成方法、半導体デバイス、電気回路、表示体モジュール、カラーフィルタおよび発光素子
JP2003124210A (ja) * 2001-10-15 2003-04-25 Seiko Epson Corp 表面処理方法、半導体デバイス、電気回路、表示体モジュール、カラーフィルタおよび発光素子
JP2003282559A (ja) * 2002-03-22 2003-10-03 Seiko Epson Corp 被処理部材の保管方法およびパターン形成方法、デバイス、並びにデバイスの製造方法

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Publication number Publication date
JP2005334864A (ja) 2005-12-08

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