JP5088667B2 - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
- Publication number
- JP5088667B2 JP5088667B2 JP2007055181A JP2007055181A JP5088667B2 JP 5088667 B2 JP5088667 B2 JP 5088667B2 JP 2007055181 A JP2007055181 A JP 2007055181A JP 2007055181 A JP2007055181 A JP 2007055181A JP 5088667 B2 JP5088667 B2 JP 5088667B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- electrode
- gas
- processing apparatus
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000002093 peripheral effect Effects 0.000 claims description 51
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 89
- 230000007423 decrease Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 9
- 230000005684 electric field Effects 0.000 description 7
- -1 polyethylene Polymers 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 6
- 239000012159 carrier gas Substances 0.000 description 5
- 239000000470 constituent Substances 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000011282 treatment Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000032258 transport Effects 0.000 description 4
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000010891 electric arc Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 230000005283 ground state Effects 0.000 description 3
- 229910052809 inorganic oxide Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 230000002940 repellent Effects 0.000 description 3
- 239000005871 repellent Substances 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- KYKAJFCTULSVSH-UHFFFAOYSA-N chloro(fluoro)methane Chemical compound F[C]Cl KYKAJFCTULSVSH-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229920001477 hydrophilic polymer Polymers 0.000 description 1
- 230000005660 hydrophilic surface Effects 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Images
Landscapes
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007055181A JP5088667B2 (ja) | 2007-03-06 | 2007-03-06 | プラズマ処理装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007055181A JP5088667B2 (ja) | 2007-03-06 | 2007-03-06 | プラズマ処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008218254A JP2008218254A (ja) | 2008-09-18 |
| JP2008218254A5 JP2008218254A5 (enExample) | 2010-04-22 |
| JP5088667B2 true JP5088667B2 (ja) | 2012-12-05 |
Family
ID=39838045
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007055181A Expired - Fee Related JP5088667B2 (ja) | 2007-03-06 | 2007-03-06 | プラズマ処理装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5088667B2 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012079429A (ja) * | 2010-09-30 | 2012-04-19 | Ngk Insulators Ltd | プラズマ処理装置 |
| EP2960358A1 (en) * | 2014-06-25 | 2015-12-30 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | Plasma source and surface treatment method |
| EP3214204B1 (en) * | 2014-10-29 | 2024-11-27 | TMEIC Corporation | Gas jetting device |
| JP6844937B2 (ja) * | 2019-02-13 | 2021-03-17 | 東芝三菱電機産業システム株式会社 | 活性ガス生成装置 |
| CN119571293B (zh) * | 2024-12-17 | 2025-07-29 | 佛山市屹博电子科技有限公司 | 一种等离子体射流喷头及等离子体增强化学气相沉积设备 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6228084A (ja) * | 1985-07-30 | 1987-02-06 | Akira Kanekawa | プラズマ・ジエツト・ト−チ |
| WO1998040533A1 (fr) * | 1997-03-13 | 1998-09-17 | Komatsu Ltd. | Dispositif et procede de traitement de surface |
| US5893985A (en) * | 1997-03-14 | 1999-04-13 | The Lincoln Electric Company | Plasma arc torch |
| JPH11354290A (ja) * | 1998-06-08 | 1999-12-24 | Ishikawajima Harima Heavy Ind Co Ltd | 微粉炭着火用プラズマトーチ |
| JP2005285520A (ja) * | 2004-03-29 | 2005-10-13 | Hiroshi Takigawa | プラズマ発生用電極、プラズマ発生装置及びプラズマ処理装置 |
-
2007
- 2007-03-06 JP JP2007055181A patent/JP5088667B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2008218254A (ja) | 2008-09-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US12057329B2 (en) | Selective etch using material modification and RF pulsing | |
| KR100456442B1 (ko) | 플라스마 처리 장치 및 플라스마 처리 방법 | |
| JP4794449B2 (ja) | ナローギャップ容量結合リアクタのrfパルシング技術 | |
| JP4827081B2 (ja) | プラズマエッチング方法およびコンピュータ読み取り可能な記憶媒体 | |
| US7651585B2 (en) | Apparatus for the removal of an edge polymer from a substrate and methods therefor | |
| KR101749766B1 (ko) | 플라즈마 처리 방법 및 플라즈마 처리 장치 | |
| KR101291347B1 (ko) | 기판에서 불소계 폴리머를 제거하기 위한 장치 및 그를위한 방법 | |
| CN101207966A (zh) | 等离子体处理装置 | |
| CN101228288A (zh) | 注射型等离子体处理设备和方法 | |
| KR20080063462A (ko) | 기판으로부터 금속 산화물을 제거하기 위한 장치 및 그방법 | |
| TW201607380A (zh) | 電漿源、表面處理裝置以及表面處理方法 | |
| JP5088667B2 (ja) | プラズマ処理装置 | |
| CN108431930A (zh) | 具有远程等离子体源和dc电极的原子层蚀刻系统 | |
| JP5103956B2 (ja) | プラズマ処理装置 | |
| US20110247995A1 (en) | Dry etching method and dry etching apparatus | |
| JP5446417B2 (ja) | プラズマ処理装置 | |
| JP2009206523A (ja) | プラズマ処理装置 | |
| JP5263202B2 (ja) | プラズマ処理装置 | |
| JP2009224517A (ja) | プラズマ処理方法およびプラズマ処理装置 | |
| JP2008091218A (ja) | プラズマ処理装置 | |
| JP2005302319A (ja) | プラズマ処理装置およびプラズマ処理方法 | |
| JP2007184163A (ja) | プラズマ処理装置 | |
| JP6926632B2 (ja) | 表面処理装置および表面処理方法 | |
| JP2004014494A (ja) | 大気圧プラズマ発生装置 | |
| JP2004311314A (ja) | プラズマ処理用ガス |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100304 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100304 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110927 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111125 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120612 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120801 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120820 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150921 Year of fee payment: 3 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 5088667 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120902 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| LAPS | Cancellation because of no payment of annual fees |