JP5086687B2 - レーザ加工装置 - Google Patents

レーザ加工装置 Download PDF

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Publication number
JP5086687B2
JP5086687B2 JP2007120812A JP2007120812A JP5086687B2 JP 5086687 B2 JP5086687 B2 JP 5086687B2 JP 2007120812 A JP2007120812 A JP 2007120812A JP 2007120812 A JP2007120812 A JP 2007120812A JP 5086687 B2 JP5086687 B2 JP 5086687B2
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JP
Japan
Prior art keywords
optical
laser
optical axis
objective lens
modulation element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007120812A
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English (en)
Japanese (ja)
Other versions
JP2008272806A (ja
JP2008272806A5 (enExample
Inventor
達哉 中村
浩一 ▲高▼橋
潤子 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Olympus Corp
Original Assignee
Olympus Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Olympus Corp filed Critical Olympus Corp
Priority to JP2007120812A priority Critical patent/JP5086687B2/ja
Priority to TW097114836A priority patent/TWI405633B/zh
Priority to KR1020080038670A priority patent/KR101523293B1/ko
Priority to CN2008100960621A priority patent/CN101298117B/zh
Publication of JP2008272806A publication Critical patent/JP2008272806A/ja
Publication of JP2008272806A5 publication Critical patent/JP2008272806A5/ja
Application granted granted Critical
Publication of JP5086687B2 publication Critical patent/JP5086687B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Laser Beam Processing (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
JP2007120812A 2007-05-01 2007-05-01 レーザ加工装置 Expired - Fee Related JP5086687B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2007120812A JP5086687B2 (ja) 2007-05-01 2007-05-01 レーザ加工装置
TW097114836A TWI405633B (zh) 2007-05-01 2008-04-23 雷射加工裝置
KR1020080038670A KR101523293B1 (ko) 2007-05-01 2008-04-25 레이저 가공 장치
CN2008100960621A CN101298117B (zh) 2007-05-01 2008-04-30 激光加工装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007120812A JP5086687B2 (ja) 2007-05-01 2007-05-01 レーザ加工装置

Publications (3)

Publication Number Publication Date
JP2008272806A JP2008272806A (ja) 2008-11-13
JP2008272806A5 JP2008272806A5 (enExample) 2010-06-24
JP5086687B2 true JP5086687B2 (ja) 2012-11-28

Family

ID=40051446

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007120812A Expired - Fee Related JP5086687B2 (ja) 2007-05-01 2007-05-01 レーザ加工装置

Country Status (4)

Country Link
JP (1) JP5086687B2 (enExample)
KR (1) KR101523293B1 (enExample)
CN (1) CN101298117B (enExample)
TW (1) TWI405633B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5301955B2 (ja) * 2008-11-13 2013-09-25 オリンパス株式会社 欠陥修正装置
JP5346690B2 (ja) * 2009-05-26 2013-11-20 オリンパス株式会社 レーザ照射装置
DE102010020183B4 (de) * 2010-05-11 2013-07-11 Precitec Kg Laserschneidkopf und Verfahren zum Schneiden eines Werkstücks mittels eines Laserschneidkopfes
TWI642507B (zh) * 2011-12-16 2018-12-01 應用材料股份有限公司 用於雷射處理設備的輻射源及多重光束組合器
CN102608875A (zh) * 2012-03-27 2012-07-25 深圳市华星光电技术有限公司 基于修补机台的玻璃基板补刻号方法及玻璃基板补刻号装置
CN103203541B (zh) * 2013-02-04 2015-05-13 张立国 一种激光加工装置
CN104375383B (zh) * 2013-08-13 2017-08-29 上海微电子装备有限公司 用于光刻设备的调焦调平检测装置及方法
JP6321932B2 (ja) * 2013-09-24 2018-05-09 株式会社小糸製作所 車両用前照灯
CN104227243A (zh) * 2014-09-11 2014-12-24 深圳英诺激光科技有限公司 一种硬质材料激光深加工设备及加工方法
CN106141457B (zh) * 2016-07-19 2018-01-12 张立国 一种激光钻孔系统及激光钻孔方法
CN106735875B (zh) * 2017-02-20 2019-01-18 湖北工业大学 一种基于液晶空间光调制器的激光柔性微加工系统及方法
CN107824968A (zh) * 2017-11-08 2018-03-23 深圳泰德激光科技有限公司 Ccd视觉定位的激光焊接装置
JP7402814B2 (ja) * 2018-10-30 2023-12-21 浜松ホトニクス株式会社 レーザ加工ヘッド及びレーザ加工装置
CN111098043B (zh) * 2020-01-19 2024-12-27 中国科学院宁波材料技术与工程研究所 水导激光加工装置和加工系统

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2220936Y (zh) * 1995-04-07 1996-02-28 中国科学院长春光学精密机械研究所 一种新型激光照排机
JPH09206965A (ja) * 1996-01-26 1997-08-12 Keyence Corp レーザマーク装置
JP2006227198A (ja) * 2005-02-16 2006-08-31 Olympus Corp レーザ加工装置
JP4429974B2 (ja) * 2005-06-17 2010-03-10 オリンパス株式会社 レーザ加工方法および装置
TWI367800B (en) * 2005-06-17 2012-07-11 Olympus Corp Laser beam machining method and apparatus
JP4947933B2 (ja) * 2005-07-26 2012-06-06 オリンパス株式会社 レーザリペア装置

Also Published As

Publication number Publication date
KR101523293B1 (ko) 2015-05-27
JP2008272806A (ja) 2008-11-13
TW200932409A (en) 2009-08-01
CN101298117A (zh) 2008-11-05
TWI405633B (zh) 2013-08-21
CN101298117B (zh) 2013-04-10
KR20080097340A (ko) 2008-11-05

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