JP5084343B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP5084343B2 JP5084343B2 JP2007122693A JP2007122693A JP5084343B2 JP 5084343 B2 JP5084343 B2 JP 5084343B2 JP 2007122693 A JP2007122693 A JP 2007122693A JP 2007122693 A JP2007122693 A JP 2007122693A JP 5084343 B2 JP5084343 B2 JP 5084343B2
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- 239000007789 gas Substances 0.000 claims description 181
- 238000006243 chemical reaction Methods 0.000 claims description 150
- 239000010409 thin film Substances 0.000 claims description 140
- 230000008569 process Effects 0.000 claims description 130
- 239000000758 substrate Substances 0.000 claims description 126
- 239000011737 fluorine Substances 0.000 claims description 73
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- 230000015572 biosynthetic process Effects 0.000 claims description 72
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 64
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 52
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 43
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- -1 fluorine radicals Chemical class 0.000 description 70
- 229910021417 amorphous silicon Inorganic materials 0.000 description 60
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- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
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- OHMHBGPWCHTMQE-UHFFFAOYSA-N 2,2-dichloro-1,1,1-trifluoroethane Chemical compound FC(F)(F)C(Cl)Cl OHMHBGPWCHTMQE-UHFFFAOYSA-N 0.000 description 2
- SYNPRNNJJLRHTI-UHFFFAOYSA-N 2-(hydroxymethyl)butane-1,4-diol Chemical compound OCCC(CO)CO SYNPRNNJJLRHTI-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
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- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
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- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 2
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- 239000000356 contaminant Substances 0.000 description 2
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
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- 229910000838 Al alloy Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 101100441092 Danio rerio crlf3 gene Proteins 0.000 description 1
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- 229910052779 Neodymium Inorganic materials 0.000 description 1
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- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
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- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
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- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
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- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
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- 238000005121 nitriding Methods 0.000 description 1
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- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
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- 239000010935 stainless steel Substances 0.000 description 1
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- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
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- 239000003039 volatile agent Substances 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007122693A JP5084343B2 (ja) | 2007-05-07 | 2007-05-07 | 半導体装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007122693A JP5084343B2 (ja) | 2007-05-07 | 2007-05-07 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008277707A JP2008277707A (ja) | 2008-11-13 |
| JP2008277707A5 JP2008277707A5 (enExample) | 2010-05-06 |
| JP5084343B2 true JP5084343B2 (ja) | 2012-11-28 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007122693A Expired - Fee Related JP5084343B2 (ja) | 2007-05-07 | 2007-05-07 | 半導体装置の作製方法 |
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| Country | Link |
|---|---|
| JP (1) | JP5084343B2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12392031B2 (en) | 2020-03-24 | 2025-08-19 | Kokusai Electric Corporation | Method of processing substrate, substrate processing apparatus, recording medium, and method of manufacturing semiconductor device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3055181B2 (ja) * | 1990-03-06 | 2000-06-26 | 住友電気工業株式会社 | 薄膜成長法 |
| JPH04137618A (ja) * | 1990-09-28 | 1992-05-12 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPH0793276B2 (ja) * | 1993-12-14 | 1995-10-09 | アプライド マテリアルズ インコーポレイテッド | 薄膜形成前処理方法および薄膜形成方法 |
| JP3061255B2 (ja) * | 1995-08-18 | 2000-07-10 | キヤノン販売株式会社 | 成膜方法 |
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2007
- 2007-05-07 JP JP2007122693A patent/JP5084343B2/ja not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12392031B2 (en) | 2020-03-24 | 2025-08-19 | Kokusai Electric Corporation | Method of processing substrate, substrate processing apparatus, recording medium, and method of manufacturing semiconductor device |
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| Publication number | Publication date |
|---|---|
| JP2008277707A (ja) | 2008-11-13 |
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