JP2008277707A5 - - Google Patents
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- Publication number
- JP2008277707A5 JP2008277707A5 JP2007122693A JP2007122693A JP2008277707A5 JP 2008277707 A5 JP2008277707 A5 JP 2008277707A5 JP 2007122693 A JP2007122693 A JP 2007122693A JP 2007122693 A JP2007122693 A JP 2007122693A JP 2008277707 A5 JP2008277707 A5 JP 2008277707A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- reaction vessel
- thin film
- plasma
- fluoride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007789 gas Substances 0.000 claims 39
- 238000006243 chemical reaction Methods 0.000 claims 30
- 238000000034 method Methods 0.000 claims 17
- 239000010409 thin film Substances 0.000 claims 15
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims 14
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 13
- 239000011737 fluorine Substances 0.000 claims 13
- 229910052731 fluorine Inorganic materials 0.000 claims 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 9
- 230000005684 electric field Effects 0.000 claims 9
- 238000004519 manufacturing process Methods 0.000 claims 9
- 239000004065 semiconductor Substances 0.000 claims 9
- 239000000758 substrate Substances 0.000 claims 9
- 229910001873 dinitrogen Inorganic materials 0.000 claims 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims 4
- 238000004140 cleaning Methods 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007122693A JP5084343B2 (ja) | 2007-05-07 | 2007-05-07 | 半導体装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007122693A JP5084343B2 (ja) | 2007-05-07 | 2007-05-07 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008277707A JP2008277707A (ja) | 2008-11-13 |
| JP2008277707A5 true JP2008277707A5 (enExample) | 2010-05-06 |
| JP5084343B2 JP5084343B2 (ja) | 2012-11-28 |
Family
ID=40055285
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007122693A Expired - Fee Related JP5084343B2 (ja) | 2007-05-07 | 2007-05-07 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5084343B2 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7182577B2 (ja) | 2020-03-24 | 2022-12-02 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3055181B2 (ja) * | 1990-03-06 | 2000-06-26 | 住友電気工業株式会社 | 薄膜成長法 |
| JPH04137618A (ja) * | 1990-09-28 | 1992-05-12 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPH0793276B2 (ja) * | 1993-12-14 | 1995-10-09 | アプライド マテリアルズ インコーポレイテッド | 薄膜形成前処理方法および薄膜形成方法 |
| JP3061255B2 (ja) * | 1995-08-18 | 2000-07-10 | キヤノン販売株式会社 | 成膜方法 |
-
2007
- 2007-05-07 JP JP2007122693A patent/JP5084343B2/ja not_active Expired - Fee Related
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