JP2008277707A5 - - Google Patents
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- Publication number
- JP2008277707A5 JP2008277707A5 JP2007122693A JP2007122693A JP2008277707A5 JP 2008277707 A5 JP2008277707 A5 JP 2008277707A5 JP 2007122693 A JP2007122693 A JP 2007122693A JP 2007122693 A JP2007122693 A JP 2007122693A JP 2008277707 A5 JP2008277707 A5 JP 2008277707A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- reaction vessel
- thin film
- plasma
- fluoride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000007789 gas Substances 0.000 claims 39
- 238000006243 chemical reaction Methods 0.000 claims 30
- 210000002381 Plasma Anatomy 0.000 claims 16
- 239000010409 thin film Substances 0.000 claims 15
- KRHYYFGTRYWZRS-UHFFFAOYSA-M fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims 14
- 239000011737 fluorine Substances 0.000 claims 13
- 229910052731 fluorine Inorganic materials 0.000 claims 13
- YCKRFDGAMUMZLT-UHFFFAOYSA-N fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 13
- 230000005684 electric field Effects 0.000 claims 9
- 238000004519 manufacturing process Methods 0.000 claims 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 9
- 239000004065 semiconductor Substances 0.000 claims 9
- 239000000758 substrate Substances 0.000 claims 9
- 238000000034 method Methods 0.000 claims 8
- 229910001873 dinitrogen Inorganic materials 0.000 claims 5
- 238000004140 cleaning Methods 0.000 claims 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims 4
- 238000005530 etching Methods 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000005755 formation reaction Methods 0.000 claims 1
Claims (5)
前記反応容器にフッ化物ガス又はフッ素ガスを導入し、前記フッ化物ガス又はフッ素ガスに電界を印加してプラズマを生成して、前記フッ化物ガス又はフッ素ガスによるプラズマガスエッチングによって前記反応容器内をクリーニングし、
前記クリーニングにより、前記フッ化物ガス又はフッ素ガスが残留している前記反応容器内に基板を設置し、
前記反応容器内に、窒素ガスを導入し、前記窒素ガスに電界を印加してプラズマを生成し、
前記反応容器への前記窒素ガスの導入を停止し、
前記反応容器に薄膜形成用プロセスガスを前記反応容器に導入し、前記薄膜形成用プロセスガスに電界を印加してプラズマを生成し、当該プラズマに含まれる活性種の化学反応により前記基板の被形成面に薄膜を形成する半導体装置の作製方法。 A method for manufacturing a semiconductor device including a step of forming a thin film in a plasma CVD apparatus provided with a reaction vessel,
Introducing a fluoride gas or fluorine gas into the reaction vessel, to generate plasma by applying an electric field to the fluoride gas or fluorine gas, the reaction vessel by the plasma gas etching using the fluoride gas or fluorine gas Clean and
In the cleaning, the substrate was placed in the reaction vessel wherein the fluoride gas or fluorine gas remaining,
Wherein the reaction vessel, nitrogen was introduced gas, to generate plasma by applying an electric field to the nitrogen gas,
To stop the introduction of the nitrogen gas into the reaction vessel,
A thin film forming process gas is introduced into the reaction vessel, an electric field is applied to the thin film forming process gas to generate plasma, and the substrate is formed by a chemical reaction of active species contained in the plasma. A method for manufacturing a semiconductor device, in which a thin film is formed on a surface.
前記反応容器内に基板を設置し、
前記反応容器にフッ化物ガス又はフッ素ガスを導入し、
前記反応容器への前記フッ化物ガス又はフッ素ガスの導入を停止して、前記反応容器内に、窒素ガスを導入し、前記窒素ガスに電界を印加してプラズマを生成し、
前記反応容器への前記窒素ガスの導入を停止し、
前記反応容器に薄膜形成用プロセスガスを前記反応容器に導入し、前記薄膜形成用プロセスガスに電界を印加してプラズマを生成し、当該プラズマに含まれる活性種の化学反応により前記基板の被形成面に薄膜を形成する半導体装置の作製方法。 A method for manufacturing a semiconductor device including a step of forming a thin film in a plasma CVD apparatus provided with a reaction vessel,
Installing a substrate in the reaction vessel;
Introducing fluoride gas or fluorine gas into the reaction vessel,
Wherein by stopping the introduction of the fluoride gas or fluorine gas into the reaction vessel, the reaction vessel, nitrogen was introduced gas, to generate plasma by applying an electric field to the nitrogen gas,
To stop the introduction of the nitrogen gas into the reaction vessel,
A thin film forming process gas is introduced into the reaction vessel, an electric field is applied to the thin film forming process gas to generate plasma, and the substrate is formed by a chemical reaction of active species contained in the plasma. A method for manufacturing a semiconductor device, in which a thin film is formed on a surface.
前記窒素ガスに電界を印加してプラズマを生成することによって、前記反応容器内に残留している前記フッ化物ガス又はフッ素ガスもプラズマ化して前記基板の被形成面をエッチングするとともに、前記反応容器内に残留している前記フッ化物ガス又はフッ素ガスを減少させることを特徴とする半導体装置の作製方法。By applying an electric field to the nitrogen gas to generate plasma, the fluoride gas or fluorine gas remaining in the reaction vessel is also turned into plasma to etch the formation surface of the substrate, and the reaction vessel A method for manufacturing a semiconductor device, characterized in that the fluoride gas or fluorine gas remaining inside is reduced.
前記反応容器にフッ化物ガス又はフッ素ガスを導入し、前記フッ化物ガス又はフッ素ガスに電界を印加してプラズマを生成して、前記フッ化物ガスによるプラズマガスエッチングによって前記反応容器内をクリーニングし、
前記クリーニングにより、前記フッ化物ガス又はフッ素ガスが残留している前記反応容器内に基板を設置し、
前記反応容器内に、薄膜形成用プロセスガスを導入し、前記プロセスガスに電界を印加してプラズマを生成し、当該プラズマに含まれる活性種の化学反応により前記基板の被形成面に薄膜を形成する半導体装置の作製方法。 A method for manufacturing a semiconductor device including a step of forming a thin film in a plasma CVD apparatus provided with a reaction vessel,
Introducing fluoride gas or fluorine gas into the reaction vessel, applying an electric field to the fluoride gas or fluorine gas to generate plasma, cleaning the inside of the reaction vessel by plasma gas etching with the fluoride gas,
By the cleaning, a substrate is placed in the reaction vessel where the fluoride gas or fluorine gas remains,
A process gas for forming a thin film is introduced into the reaction vessel, an electric field is applied to the process gas to generate plasma, and a thin film is formed on the surface of the substrate by a chemical reaction of active species contained in the plasma. A method for manufacturing a semiconductor device.
前記反応容器内に基板を設置し、
前記反応容器にフッ化物ガス又はフッ素ガスを導入し、
前記反応容器への前記フッ化物ガス又はフッ素ガスの導入を停止し、
前記反応容器に薄膜形成用プロセスガスを前記反応容器に導入し、前記薄膜形成用プロセスガスに電界を印加してプラズマを生成し、当該プラズマに含まれる活性種の化学反応により前記基板の被形成面に薄膜を形成する半導体装置の作製方法。 A method for manufacturing a semiconductor device including a step of forming a thin film in a plasma CVD apparatus provided with a reaction vessel,
Installing a substrate in the reaction vessel;
Introducing fluoride gas or fluorine gas into the reaction vessel,
Stop introducing the fluoride gas or fluorine gas into the reaction vessel,
A thin film forming process gas is introduced into the reaction vessel, an electric field is applied to the thin film forming process gas to generate plasma, and the substrate is formed by a chemical reaction of active species contained in the plasma. A method for manufacturing a semiconductor device, in which a thin film is formed on a surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007122693A JP5084343B2 (en) | 2007-05-07 | 2007-05-07 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007122693A JP5084343B2 (en) | 2007-05-07 | 2007-05-07 | Method for manufacturing semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008277707A JP2008277707A (en) | 2008-11-13 |
| JP2008277707A5 true JP2008277707A5 (en) | 2010-05-06 |
| JP5084343B2 JP5084343B2 (en) | 2012-11-28 |
Family
ID=40055285
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007122693A Expired - Fee Related JP5084343B2 (en) | 2007-05-07 | 2007-05-07 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5084343B2 (en) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3055181B2 (en) * | 1990-03-06 | 2000-06-26 | 住友電気工業株式会社 | Thin film growth method |
| JPH04137618A (en) * | 1990-09-28 | 1992-05-12 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPH0793276B2 (en) * | 1993-12-14 | 1995-10-09 | アプライド マテリアルズ インコーポレイテッド | Thin film forming pretreatment method and thin film forming method |
| JP3061255B2 (en) * | 1995-08-18 | 2000-07-10 | キヤノン販売株式会社 | Film formation method |
-
2007
- 2007-05-07 JP JP2007122693A patent/JP5084343B2/en not_active Expired - Fee Related
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