JP5063560B2 - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
- Publication number
- JP5063560B2 JP5063560B2 JP2008286543A JP2008286543A JP5063560B2 JP 5063560 B2 JP5063560 B2 JP 5063560B2 JP 2008286543 A JP2008286543 A JP 2008286543A JP 2008286543 A JP2008286543 A JP 2008286543A JP 5063560 B2 JP5063560 B2 JP 5063560B2
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- exhaust
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- 239000000758 substrate Substances 0.000 title claims description 161
- 239000012530 fluid Substances 0.000 claims description 68
- 239000002904 solvent Substances 0.000 claims description 64
- 239000007921 spray Substances 0.000 claims description 62
- 239000006185 dispersion Substances 0.000 claims description 21
- 239000007788 liquid Substances 0.000 claims description 18
- 238000005507 spraying Methods 0.000 claims description 10
- 230000001174 ascending effect Effects 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 238000000926 separation method Methods 0.000 claims description 5
- 239000003595 mist Substances 0.000 claims description 3
- 239000003960 organic solvent Substances 0.000 claims description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 54
- 239000007789 gas Substances 0.000 description 51
- 238000004140 cleaning Methods 0.000 description 28
- 238000001035 drying Methods 0.000 description 26
- 238000000034 method Methods 0.000 description 12
- 230000007246 mechanism Effects 0.000 description 11
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 9
- 230000007723 transport mechanism Effects 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 8
- 230000000630 rising effect Effects 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 229910001873 dinitrogen Inorganic materials 0.000 description 5
- 238000005192 partition Methods 0.000 description 5
- 239000002699 waste material Substances 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- -1 but is a vapor-like Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/74—General processes for purification of waste gases; Apparatus or devices specially adapted therefor
- B01D53/77—Liquid phase processes
- B01D53/78—Liquid phase processes with gas-liquid contact
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/14—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by absorption
- B01D53/18—Absorbing units; Liquid distributors therefor
- B01D53/185—Liquid distributors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2252/00—Absorbents, i.e. solvents and liquid materials for gas absorption
- B01D2252/10—Inorganic absorbents
- B01D2252/103—Water
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2258/00—Sources of waste gases
- B01D2258/02—Other waste gases
- B01D2258/0216—Other waste gases from CVD treatment or semi-conductor manufacturing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Environmental & Geological Engineering (AREA)
- Biomedical Technology (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Treating Waste Gases (AREA)
- Gas Separation By Absorption (AREA)
Description
3 キャリア 4 キャリア搬入出ユニット
5 基板搬入出ユニット 6 基板処理ユニット
7 キャリアステージ 8 開閉扉
9 キャリア搬送機構 10 キャリアストック
11 キャリア載置台 12 開閉扉
13 基板搬入出機構 14 基板搬送機構
15 基板洗浄乾燥装置 16,17,18 基板洗浄装置
19 保持体 20 洗浄装置
21 基板処理部 22 処理流体供給部
23 排気処理部 24 洗浄槽
25 乾燥室 26 開閉蓋
27 保持体 28 IPA蒸気供給源
29 窒素ガス供給源 30,31 連通管
32 切換器 33 供給管
34 供給ノズル 35 排出管
36 排気処理室 37 排気管
38 排水管 39 排気流入口
40 排気流出口 41 排水流出口
42,43 仕切壁 44 排気処理流路
45 排水流路 46 排気上昇流路
47 排気流路 48,49 噴霧ノズル
50 溶媒供給源 51 連通管
52,53,54 分散板 55 貫通孔
56 気液分離フィルター
Claims (9)
- 基板を処理するための基板処理部と、
基板を処理する処理流体を基板処理部に供給するための処理流体供給部と、
噴霧ノズルから処理流体を溶解する溶媒を基板処理部より排出された排気に向けて噴霧することによって排気中の処理流体濃度を低減させるための排気処理部と、
を有し、
排気処理部は、流入する排気に向けて溶媒を噴霧する噴霧ノズルを排気が流入する排気流入口の近傍に配置したことを特徴とする基板処理装置。 - 前記排気処理部に流入する排気に対して排気の流れと直交する向きに向けて前記溶媒を噴霧する第1の噴霧ノズルを設けたことを特徴とする請求項1に記載の基板処理装置。
- 前記排気処理部に流入する排気に対して排気の流れと平行な向きに向けて前記溶媒を噴霧する第2の噴霧ノズルを設けたことを特徴とする請求項2に記載の基板処理装置。
- 前記排気処理部に排気を分散させるための多孔状の分散板を設けたことを特徴とする請求項2又は請求項3に記載の基板処理装置。
- 前記分散板に向けて前記溶媒の少なくとも一部を噴霧することを特徴とする請求項4に記載の基板処理装置。
- 基板を処理するための基板処理部と、
基板を処理する処理流体を基板処理部に供給するための処理流体供給部と、
噴霧ノズルから処理流体を溶解する溶媒を基板処理部より排出された排気に向けて噴霧することによって排気中の処理流体濃度を低減させるための排気処理部と、
を有し、
排気処理部は、流入する排気に向けて溶媒を噴霧する噴霧ノズルを配置した排気処理流路の下流側に下方から上方に向けて排気を流す排気上昇流路を形成し、排気上昇流路の断面積を排気処理流路の断面積よりも大きくして、排気上昇流路を流れる排気の流速を排気処理流路を流れる排気の流速よりも遅くなるようにしたことを特徴とする基板処理装置。 - 前記排気上昇流路に気液分離フィルターを設けたことを特徴とする請求項6に記載の基板処理装置。
- 前記処理流体として有機溶剤の蒸気又はミストを用いることを特徴とする請求項1〜請求項7のいずれかに記載の基板処理装置。
- 前記溶媒として水を用いることを特徴とする請求項1〜請求項8のいずれかに記載の基板処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008286543A JP5063560B2 (ja) | 2008-11-07 | 2008-11-07 | 基板処理装置 |
KR1020117007883A KR101531437B1 (ko) | 2008-11-07 | 2009-11-06 | 기판 처리 장치 |
US13/127,571 US8882961B2 (en) | 2008-11-07 | 2009-11-06 | Substrate treatment apparatus |
TW098137792A TWI413203B (zh) | 2008-11-07 | 2009-11-06 | Substrate processing device |
PCT/JP2009/068974 WO2010053149A1 (ja) | 2008-11-07 | 2009-11-06 | 基板処理装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008286543A JP5063560B2 (ja) | 2008-11-07 | 2008-11-07 | 基板処理装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012165444A Division JP5460789B2 (ja) | 2012-07-26 | 2012-07-26 | 基板処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010114307A JP2010114307A (ja) | 2010-05-20 |
JP5063560B2 true JP5063560B2 (ja) | 2012-10-31 |
Family
ID=42152956
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008286543A Active JP5063560B2 (ja) | 2008-11-07 | 2008-11-07 | 基板処理装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8882961B2 (ja) |
JP (1) | JP5063560B2 (ja) |
KR (1) | KR101531437B1 (ja) |
TW (1) | TWI413203B (ja) |
WO (1) | WO2010053149A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5063560B2 (ja) * | 2008-11-07 | 2012-10-31 | 東京エレクトロン株式会社 | 基板処理装置 |
JP5921168B2 (ja) * | 2011-11-29 | 2016-05-24 | 株式会社日立国際電気 | 基板処理装置 |
US10295591B2 (en) * | 2013-01-02 | 2019-05-21 | Texas Instruments Incorporated | Method and device for testing wafers |
JP7132706B2 (ja) * | 2017-10-06 | 2022-09-07 | 株式会社ディスコ | 汽水分離タンク |
JP2022188853A (ja) | 2021-06-10 | 2022-12-22 | 東京エレクトロン株式会社 | 気体処理装置及び基板処理装置 |
US20240120204A1 (en) | 2022-10-07 | 2024-04-11 | Tokyo Electron Limited | Substrate processing apparatus and control method for a substrate processing apparatus |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0773657B2 (ja) * | 1986-08-07 | 1995-08-09 | 三菱重工業株式会社 | 湿式排煙脱硫方法 |
JP3837016B2 (ja) | 2000-09-28 | 2006-10-25 | 大日本スクリーン製造株式会社 | 基板処理方法および基板処理装置 |
JP2002301332A (ja) * | 2001-04-05 | 2002-10-15 | Nomura Micro Sci Co Ltd | 無機酸を含む気体の処理方法、処理装置、処理システム、及び、洗浄処理装置 |
JP2006210839A (ja) | 2005-01-31 | 2006-08-10 | Daikin Ind Ltd | 洗浄装置 |
JP2006216803A (ja) * | 2005-02-04 | 2006-08-17 | Daikin Ind Ltd | 処理装置 |
JP2007032472A (ja) | 2005-07-28 | 2007-02-08 | Hitachi Ltd | 尿素水を用いた排気処理装置 |
KR20070042394A (ko) * | 2005-10-18 | 2007-04-23 | 삼성전자주식회사 | 습식 세정장비의 배기모듈 |
JP2007218192A (ja) | 2006-02-17 | 2007-08-30 | Hino Motors Ltd | 排気浄化装置 |
JP2007273819A (ja) | 2006-03-31 | 2007-10-18 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
TWM325867U (en) | 2007-07-18 | 2008-01-21 | Gau-Ying Huang | Exhaust processing device |
JP5063560B2 (ja) * | 2008-11-07 | 2012-10-31 | 東京エレクトロン株式会社 | 基板処理装置 |
-
2008
- 2008-11-07 JP JP2008286543A patent/JP5063560B2/ja active Active
-
2009
- 2009-11-06 TW TW098137792A patent/TWI413203B/zh active
- 2009-11-06 US US13/127,571 patent/US8882961B2/en active Active
- 2009-11-06 WO PCT/JP2009/068974 patent/WO2010053149A1/ja active Application Filing
- 2009-11-06 KR KR1020117007883A patent/KR101531437B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
TW201036088A (en) | 2010-10-01 |
JP2010114307A (ja) | 2010-05-20 |
KR101531437B1 (ko) | 2015-06-24 |
US8882961B2 (en) | 2014-11-11 |
TWI413203B (zh) | 2013-10-21 |
KR20110089255A (ko) | 2011-08-05 |
WO2010053149A1 (ja) | 2010-05-14 |
US20110259521A1 (en) | 2011-10-27 |
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